CEL NE55410GR

LDMOS FIELD EFFECT TRANSISTOR
NE55410GR
N-CHANNEL SILICON POWER LDMOS FET
FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
DESCRIPTION
The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such
as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different
FET's on one die manufactured using our NEWMOS technology (our WSi gate lateral MOS FET), and its nitride
surface passivation and quadruple layer aluminum silicon metalization offer a high degree of reliability.
FEATURES
• Two different FET’s (Q1 : Pout = 2 W, Q2 : Pout = 10 W) in one package
• Over 25 dB gain available by connecting two FET’s in series
: GL (Q1) = 13.5 dB TYP. (VDS = 28 V, IDset (Q1) = 20 mA, f = 2 140 MHz)
: GL (Q2) = 11.0 dB TYP. (VDS = 28 V, IDset (Q2) = 100 mA, f = 2 140 MHz)
• High 1 dB compression output power : PO (1 dB) (Q1) = 35.4 dBm TYP. (VDS = 28 V, IDset (Q1) = 20 mA, f = 2 140 MHz)
: PO (1 dB) (Q2) = 40.4 dBm TYP. (VDS = 28 V, IDset (Q2) = 100 mA, f = 2 140 MHz)
: ηd (Q1) = 52% TYP. (VDS = 28 V, IDset (Q1) = 20 mA, f = 2 140 MHz)
• High drain efficiency
: ηd (Q2) = 46% TYP. (VDS = 28 V, IDset (Q2) = 100 mA, f = 2 140 MHz)
: IM3 (Q1) = −40 dBc TYP. (VDS = 28 V, IDset (Q1+Q2) = 120 mA,
• Low intermodulation distortion
f = 2 132.5/2 147.5 MHz, Pout = 33 dBm (2 tones) )
• Single Supply (VDS : 3 V < VDS ≤ 30 V)
• Excellent Thermal Stability
• Surface mount type and Super low cost plastic package : 16-pin plastic HTSSOP
• Integrated ESD protection
• Excellent stability against HCI (Hot Carrier Injection)
APPLICATION
• Digital cellular base station PA : W-CDMA/GSM/D-AMPS/PDC/N-CDMA/PCS etc.
• UHF-band TV transmitter PA
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PU10542EJ02V0DS (2nd edition)
Date Published June 2005 CP(K)
The mark  shows major revised points.
NE55410GR
ORDERING INFORMATION
Part Number
NE55410GR
Order Number
NE55410GR-T3-AZ
Package
Marking
16-pin plastic HTSSOP
55410
(Pb-Free)
Supplying Form
• Embossed tape 12 mm wide
• Pin 1 and 8 indicates pull-out direction of tape
Note
• Qty 1 kpcs/reel
Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
your nearby sales office.
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE55410GR
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
9
S
(Top View)
Pin No.
Pin Name
Pin No.
Pin Name
S
1
Source
9
Source
8
2
Drain (Q2)
10
Gate (Q1)
7
3
Drain (Q2)
11
Source
6
4
Drain (Q2)
12
Drain (Q1)
5
Drain (Q2)
13
Source
6
Source
14
Gate (Q2)
2
7
Gate (Q1)
15
Gate (Q2)
1
8
Source
16
Source
S
Q1
10
11
S
S
S
12
13
S
5
4
Q2
14
3
15
16
S
S
S
Remark All the terminals of a Q2 connected to a
S
circuit. Backside : Source (S)
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Ratings
Unit
Drain to Source Voltage
VDS
65
V
Gate to Source Voltage
VGS
±7
V
Drain Current (Q1)
ID (Q1)
0.25
A
Drain Current (Q2)
ID (Q2)
1.0
A
Ptot
40
W
Total Device Dissipation (Tcase = 25°C)
Input Power (Q1)
Pin (Q1)
f = 2.14 GHz, VDS = 28 V
0.3
W
Input Power (Q2)
Pin (Q2)
f = 2.14 GHz, VDS = 28 V
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−65 to +150
°C
2
Data Sheet PU10542EJ02V0DS
NE55410GR
THERMAL RESISTANCE (TA = +25°C)
Parameter
Channel to Case Resistance
Symbol
Test Conditions
Rth (ch-c)
MIN.
TYP.
MAX.
Unit
−
2.5
3.0
°C/W
MIN.
TYP.
MAX.
Unit
RECOMMENDED OPERATING CONDITIONS (TA = +25°C)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
VDS
−
28
30
V
Gate to Source Voltage
VGS
2.7
3.3
3.7
V
Input Power (Q1), CW
Pin (Q1)
−
15
23
dBm
Input Power (Q2), CW
Pin (Q2)
−
20
30
dBm
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Symbol
Test Conditions
Q1
Gate to Source Leak Current
IGSS (Q1)
VGSS = 5V
−
−
1
µA
Drain to Source Leakage Current
IDSS (Q1)
VDSS = 65 V
−
−
1
mA
Gate Threshold Voltage
Vth (Q1)
VDS = 10 V, IDS = 1 mA
2.2
2.8
3.4
V
Transconductance
gm (Q1)
VDS = 28 V, IDS = 20 mA
−
0.09
−
S
65
75
−
V
Drain to Source Breakdown Voltage
BVDSS (Q1) IDSS = 10 µA
Q2
Gate to Source Leak Current
IGSS (Q2)
VGSS = 5V
−
−
1
µA
Drain to Source Leakage Current
IDSS (Q2)
VDSS = 65 V
−
−
1
mA
Gate Threshold Voltage
Vth (Q2)
VDS = 10 V, IDS = 1 mA
2.0
2.6
3.2
V
Transconductance
gm (Q2)
VDS = 28 V, IDS = 100 mA
−
0.45
−
S
65
75
−
V
Drain to Source Breakdown Voltage
BVDSS (Q2) IDSS = 10 µA
Data Sheet PU10542EJ02V0DS
3
NE55410GR
RF CHARACTERISTICS (TA = +25°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Gain 1 dB Compression Output Power
PO (1 dB)
f = 2 140 MHz, VDS = 28 V,
−
35.4
−
dBm
Q1
Drain Efficiency
ηd
IDset = 20 mA
−
52
−
%
Linear Gain
GL
Pin = 15 dBm
12
13.5
−
dB
f = 2 140 MHz, VDS = 28 V,
−
40.4
−
dBm
Q2
Gain 1 dB Compression Output Power
PO (1 dB)
Drain Efficiency
ηd
IDset = 100 mA
−
46
−
%
Linear Gain
GL
Pin = 20 dBm
9.5
11
−
dB
f = 1 840 MHz, VDS = 28 V,
−
40.5
−
dBm
Gain 1 dB Compression Output Power
PO (1 dB)
Drain Efficiency
ηd
IDset = 100 mA
−
49
−
%
Linear Gain
GL
Pin = 20 dBm
−
14
−
dB
PO (1 dB)
f = 880 MHz, VDS = 28 V,
−
41.5
−
dBm
Drain Efficiency
ηd
IDset = 120 mA (Q1 + Q2)
−
55
−
%
Linear Gain
GL
Pin = 5 dBm
−
30
−
dB
f = 2 140 MHz, VDS = 28 V,
−
40.0
−
dBm
Q1 + Q2
Gain 1 dB Compression Output Power
Gain 1 dB Compression Output Power
PO (1 dB)
Drain Efficiency
ηd
IDset = 120 mA (Q1 + Q2)
34
42
−
%
Output Power
Pout
Pin = 16 dBm
39
40
−
dB
Linear Gain
GL
Pin = 10 dBm
24
25
−
dB
3rd Order Intermodulation Distortion
IM3
f = 2 132.5/2 147.5 MHz, VDS = 28 V,
−
−40
−
dBc
ηd
2 carrier W-CDMA 3GPP, Test Model1,
−
21
−
%
Drain Efficiency
64DPCH, 67% Clipping,
IDset = 120 mA (Q1 + Q2),
Ave Pout = 33 dBm
4
Data Sheet PU10542EJ02V0DS
NE55410GR
GAIN, DRAIN EFFICIENCY,
vs. OUTPUT POWER
34
Gain G (dB)
32
80
f = 840 MHz
860 MHz
880 MHz
900 MHz
920 MHz
70
60
G
50
30
40
28
ηd
26
30
24
20
22
10
20
20
25
30
35
Drain Efficiency ηd (%)
36
0
45
40
Output Power Pout (dBm)
3rd/5th Order Intermodulation Distortion IM3/IM5 (dBc)
TYPICAL CHARACTERISTICS (TA = +25°C, VDS = 28 V, IDset = 120 mA, unless otherwise specified)
IM3/IM5 vs. 2 TONES OUTPUT POWER
–10
Lower
Upper
–20
IM3
–30
–40
–50
IM5
–60
–70
15
CW, f = 960 MHz,
1 MHz Spacing
20
25
30
35
40
45
2 tones Output Power Pout (dBm)
30
80
28
70
60
Gain G (dB)
26
G
24
50
22
40
20
30
ηd
18
f = 2.09 GHz
2.11 GHz
2.14 GHz
2.17 GHz
2.19 GHz
35
40
16
14
20
25
30
20
Drain Efficiency ηd (%)
GAIN, DRAIN EFFICIENCY,
vs. OUTPUT POWER
10
0
45
IM3/IM5, DRAIN EFFICIENCY,
vs. 2 TONES OUTPUT POWER
–20
–25
100
Lower
Upper
90
–30
80
IM3
–35
70
IM5
–40
60
–45
50
–50
40
–55
30
ηd
–60
20
–65
–70
15
Drain Efficiency ηd (%)
3rd/5th Order Intermodulation Distortion IM3/IM5 (dBc)
Output Power Pout (dBm)
W-CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping,
Center Frequency 2.14GHz,
15 MHz spacing
10
20
25
30
35
40
0
45
2 tones Output Power Pout (dBm)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10542EJ02V0DS
5
NE55410GR
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.ncsd.necel.com/
6
Data Sheet PU10542EJ02V0DS
NE55410GR
EVALUATION CIRCUIT (f = 840 to 960 MHz, VDS = 28 V, IDset = 120 mA)
VDS (+28 V)
+
B
47µF
6.8 kΩ
0.22 µF
2.2 kΩ
0.001 µF
NE55410GR
1 kΩ
TL5
(open)7
Q1
TL4
12
RFin
TL1
TL2
TL3 10
TL7
A
47 pF
15 Ω
47 pF
TL6
S
3 pF
14
TL8
A
TL9
TL10
TL11
TL19
2
3
4
5
Q2
15
15 pF
TL12
TL14
TL15
2.2 nH
12 pF
4 pF
TL18 RFout
47 pF
6 pF
9 pF
TL17
TL13
S
10 Ω
TL16
2 pF
2 pF
S S S S S S S S
1 6 8 9 11 13 16
56 nH
(Back side)
0.22 µF
18 Ω
0.047
µF
Symbol
6.8 kΩ
B
1 kΩ
Width (mm) Length (mm)
Symbol
Width (mm) Length (mm)
TL1
1.0
3.0
TL11
1.0
3.0
TL2
4.5
10.0
TL12
1.0
5.0
TL3
0.5
16.0
TL13
0.8
48.0
TL4
0.5
5.0
TL14
1.0
6.5
TL5
1.0
48.0
TL15
1.0
10.5
TL6
1.0
4.0
TL16
1.0
9.5
TL7
1.0
3.0
TL17
1.0
10.0
TL8
1.0
6.0
TL18
1.0
6.0
TL9
1.0
3.0
TL19
1.0
3.0
TL10
1.0
4.0
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
Data Sheet PU10542EJ02V0DS
7
NE55410GR
EVALUATION CIRCUIT (f = 840 to 960 MHz, VDS = 28 V, IDset = 120 mA)
VDS (Q2), +28 V
VGS (Q1), +28 V
6.8 kΩ 0.22 µF
2.2 kΩ
15 Ω
47 µF
1 kΩ
(Valiable)
0.22 µF
RF in
47 pF
6 pF
47 pF
2 pF
55410
4 pF
12 pF
3 pF
2 pF
2.2 nH
15 pF
1.5 pF
47 pF
RF out
0.001 µF
18 Ω
VDS (Q1), +28 V
8
10 Ω
56 nH
1 kΩ
(Valiable)
6.8 kΩ
0.047 µ F
VGS (Q2), +28 V
Data Sheet PU10542EJ02V0DS
9 pF
NE55410GR
EVALUATION CIRCUIT (f = 2 090 to 2 190 MHz, VDS = 28 V, IDset = 120 mA)
VDS (+28 V)
+
B
22 µF
6.8 kΩ
0.22 µF
TL3
0.22 µF
NE55410GR
1 kΩ
TL8
10 Ω
RFin
TL1
TL2
7
(open)
TL4
TL5
TL6
Q1
12
TL7
10
TL10
TL9
TL11
A
33 pF
47 pF
S
1 pF
2 pF
8.5 pF
TL13
TL12
A
14
2
3
4
5
Q2
15
0.75 pF
S
TL15
TL17 TL18
15 pF
3 pF
1 pF
TL21 RFout
TL16
10 Ω
12 nH
TL19 TL20
1 pF
S S S S S S S S
1 6 8 9 11 13 16
TL14
(Back side)
0.22 µF
10 Ω
0.22 µF
6.8 kΩ
B
1 kΩ
Symbol
Width (mm) Length (mm)
Symbol
Width (mm) Length (mm)
TL1
1.0
17.0
TL12
1.0
4.0
TL2
1.0
4.0
TL13
1.0
4.5
TL3
1.0
24.5
TL14
1.0
25.0
TL4
1.0
2.5
TL15
2.5
2.5
TL5
1.0
3.0
TL16
1.0
27.0
TL6
0.5
2.5
TL17
1.0
2.0
TL7
0.5
4.5
TL18
5.0
4.0
TL8
1.0
25.5
TL19
5.0
2.0
TL9
1.0
2.5
TL20
1.0
12.5
TL10
4.5
4.5
TL21
1.0
5.5
TL11
1.0
3.5
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
Data Sheet PU10542EJ02V0DS
9
NE55410GR
EVALUATION CIRCUIT (f = 2 090 to 2 190 MHz, VDS = 28 V, IDset = 120 mA)
VDS (Q2), +28 V
VGS (Q1), +28 V
1 kΩ
6.8 kΩ (Valiable) 0.22 µF
10 Ω
22 µF
0.22 µF
RF in
15 pF
0.5 pF
2 pF
33 pF
55410
3 pF
1 pF
1.0 pF
0.22 µF
RF out
12 nH
10 Ω
15 pF
0.75 pF
10 Ω
1 pF 0.22 µF
6.8 kΩ
VGS (Q2), +28 V
VDS (Q1), +28 V
10
1 kΩ
(Valiable)
Data Sheet PU10542EJ02V0DS
NE55410GR
PACKAGE DIMENSIONS
16-PIN PLASTIC HTSSOP (UNIT: mm)
(0.5)
(0.4)
9
16
(2.7)
5.5±0.3
55410
8
NEC
0.20±0.10
0.65±0.1
(1.8)
0.20±0.10
6.4±0.3
1
(0.1)
5.2±0.2
(2.5)
0.9±0.2
(1.5)
Remark ( ): Reference value
LAND PATTERN (UNIT: mm)
6.40
5.20
0.20
0.28
5.50
0.65
1.50
0.20
0.50
0.24
0.50
1.00
0.28
1.15
0.28
0.24
0.50
0.40
0.10
1.50
4.00
0.48
Remarks1. Via holes : 158 holes
2. Hole size : φ 0.25 mm
3. Min. spacing : 0.354 mm
4.
: Solder resist or etching
Data Sheet PU10542EJ02V0DS
11
NE55410GR
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions.
For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Infrared Reflow
Wave Soldering
Soldering Conditions
Condition Symbol
Peak temperature (package surface temperature)
: 260°C or below
Time at peak temperature
: 10 seconds or less
Time at temperature of 220°C or higher
: 60 seconds or less
Preheating time at 120 to 180°C
: 120±30 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (molten solder temperature)
: 260°C or below
Time at peak temperature
: 10 seconds or less
IR260
WS260
Preheating temperature (package surface temperature) : 120°C or below
Partial Heating
Maximum number of flow processes
: 1 time
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (terminal temperature)
: 350°C or below
Soldering time (per side of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Caution Do not use different soldering methods together (except for partial heating).
12
Data Sheet PU10542EJ02V0DS
HS350
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Lead (Pb)
< 1000 PPM
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance
content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information
provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better
integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate
information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL
suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for
release.
In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to
customer on an annual basis.
See CEL Terms and Conditions for additional clarification of warranties and liability.