DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3510M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 16 dB TYP. @ f = 4 GHz, VDS = 2 V, ID = 15 mA NF = 0.35 dB TYP., Ga = 19 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA (Reference only) • Flat-lead 4-pin thin-type super minimold (M04) package APPLICATIONS • Satellite radio (SDARS, DMB, etc.) antenna LNA • Low noise amplifier for microwave communication system ORDERING INFORMATION Part Number NE3510M04 Order Number NE3510M04-A NE3510M04-T2 NE3510M04-T2-A Package Quantity Marking Flat-lead 4-pin thin- 50 pcs (Non reel) V81 type super minimold • 8 mm wide embossed taping • Pin 1 (Source), Pin 2 (Drain) face 3 kpcs/reel (M04) (Pb-Free) Supplying Form the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE3510M04 ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Symbol Ratings Unit Drain to Source Voltage VDS 4.0 V Gate to Source Voltage VGS −3.0 V Drain Current ID IDSS mA Gate Current IG 140 μA 125 mW Total Power Dissipation Ptot Note Channel Temperature Tch +150 °C Storage Temperature Tstg −65 to +150 °C Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. PG10676EJ01V0DS (1st edition) Date Published July 2007 NS Printed in Japan 2007 NE3510M04 RECOMMENDED OPERATING CONDITIONS (TA = +25°C) Parameter Symbol MIN. TYP. MAX. Unit VDS − 2 3 V Drain Current ID − 15 30 mA Input Power Pin − − 0 dBm Drain to Source Voltage ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Gate to Source Leak Current IGSO VGS = −3 V − 0.5 10 μA Saturated Drain Current IDSS VDS = 2 V, VGS = 0 V 42 70 97 mA VGS (off) VDS = 2 V, ID = 100 μA −0.35 −0.7 −1.10 V Transconductance gm VDS = 2 V, ID = 15 mA 70 − − mS Noise Figure NF VDS = 2 V, ID = 15 mA, f = 4 GHz − 0.45 0.65 dB Associated Gain Ga 14.5 16 − dB − +11 − dBm Gate to Source Cutoff Voltage Gain 1 dB Compression Output Power 2 PO (1 dB) VDS = 2 V, ID = 15 mA (Non-RF), f = 4 GHz Data Sheet PG10676EJ01V0DS NE3510M04 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 100 Mounted on Glass Epoxy PCB (1.08 cm2 × 1.0 mm (t) ) Drain Current ID (mA) 200 150 100 80 70 60 50 40 30 10 100 150 200 0 –1.0 250 –0.8 –0.6 –0.4 –0.2 Ambient Temperature TA (°C) Gate to Source Voltage VGS (V) MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Ga 0.6 0.5 0.4 0.3 0.2 0.1 0.0 NFmin 0 5 10 24 VDS = 2 V 22 ID = 15 mA 20 18 16 14 12 10 8 6 4 2 0 15 100 90 Drain Current ID (mA) 1.2 1.1 1.0 0.9 0.8 0.7 0 VGS = 0 V 80 –0.1 V 70 –0.2 V 60 –0.3 V 50 40 –0.4 V 30 –0.5 V 20 –0.6 V 10 –0.7 V 0 0 1 2 3 4 5 Drain to Source Voltage VDS (V) MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. DRAIN CURRENT MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. DRAIN CURRENT 1.2 f = 2.0 GHz 1.1 VDS = 2 V 1.0 0.9 0.8 0.7 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 Ga NFmin 5 10 15 20 25 30 24 22 20 18 16 14 12 10 8 6 4 2 0 35 Minimum Noise Figure NFmin (dB) Frequency f (GHz) 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 Drain Current ID (mA) Ga NFmin 5 10 15 20 24 f = 4.0 GHz 22 VDS = 2 V 20 18 16 14 12 10 8 6 4 2 0 25 30 35 Associated Gain Ga (dB) 50 Associated Gain Ga (dB) Minimum Noise Figure NFmin (dB) VDS = 2 V 20 50 0 Minimum Noise Figure NFmin (dB) 90 Associated Gain Ga (dB) Total Power Dissipation Ptot (mW) 250 Drain Current ID (mA) Remark The graphs indicate nominal characteristics. Data Sheet PG10676EJ01V0DS 3 NE3510M04 OUTPUT POWER, GAIN, DRAIN CURRENT, GATE CURRENT vs. INPUT POWER 20 60 f = 4 GHz, VDS = 2 V ID = 15 mA set (Non-RF) Gain 50 Pout (1 tone) 10 40 5 30 0 20 ID –5 –10 –20 –15 –10 –5 10 IG 0 Drain Current ID (mA) Gate Current IG (mA) Output Power Pout (1 tone) (dBm) Gain (dB) 15 5 10 0 15 Input Power Pin (1 tone) (dBm) OUTPUT POWER, IM3, DRAIN CURRENT vs. INPUT POWER 20 50 f = 4 GHz, VDS = 2 V ID = 15 mA set (Non-RF) OIP3 = +20 dBm 45 Pout 10 40 0 35 IIP3 = +4 dBm –10 30 IM3 (H) –20 25 IM3 (L) –30 20 –40 15 –50 ID –60 –70 –40 5 –30 –20 –10 Input Power Pin (1 tone) (dBm) Remark The graphs indicate nominal characteristics. 4 10 Data Sheet PG10676EJ01V0DS 0 0 10 Drain Current ID (mA) Output Power Pout (1 tone) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) 30 NE3510M04 S-PARAMETERS S-parameters/Noise parameters are provided on our web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.ncsd.necel.com/microwave/index.html Data Sheet PG10676EJ01V0DS 5 NE3510M04 PACKAGE DIMENSIONS FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm) PIN CONNECTIONS 1. 2. 3. 4. 6 Source Drain Source Gate Data Sheet PG10676EJ01V0DS 2.0±0.1 2 1 1.25 3 4 1.30 0.65 1.30 3 4 0.30+0.1 –0.05 0.11+0.1 –0.05 1 0.30+0.1 –0.05 0.59±0.05 (1.05) 0.65 0.60 0.65 1.25 2 1.25±0.1 V81 2.0±0.1 (Bottom View) 0.30+0.1 –0.05 0.40+0.1 –0.05 2.05±0.1 NE3510M04 MOUNTING PAD DIMENSIONS (REFERENCE ONLY) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) PACKAGE (UNIT: mm) 3 4 0.5 1 1.3 1.25 0.6 2 1.6 0.6 Data Sheet PG10676EJ01V0DS 7 NE3510M04 RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Partial Heating Soldering Conditions Condition Symbol Peak temperature (package surface temperature) : 260°C or below Time at peak temperature : 10 seconds or less Time at temperature of 220°C or higher : 60 seconds or less Preheating time at 120 to 180°C : 120±30 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (terminal temperature) : 350°C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Caution Do not use different soldering methods together (except for partial heating). 8 Data Sheet PG10676EJ01V0DS IR260 HS350 NE3510M04 • The information in this document is current as of July, 2007. The information is subject to change without notice. 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(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1 Data Sheet PG10676EJ01V0DS 9 NE3510M04 Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. • Do not lick the product or in any way allow it to enter the mouth.