NEC'S 10 W L & S-BAND NE650103M POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS (Units in mm) • LOW COST PLASTIC PACKAGE PACKAGE OUTLINE 3M • USABLE TO 2.7 GHz: PCS, W-CDMA, WLL, Satellite Uplink, BWA 20.32 ± 0.15 • HIGH OUTPUT POWER: 40 dBm TYP 14.27 ± 0.15 • HIGH POWER ADDED EFFICIENCY: 45 % TYP at 2.3 GHz 3.5 ± 0.2 • LOW THERMAL RESISTANCE: 4.0° C/W GATE 5.84 ± 0.2 • LEAD-FREE DESCRIPTION ELECTRICAL CHARACTERISTICS (TC Functional Characteristics Electrical DC Characteristics 4.2 ± 0.4 = 25°C) PART NUMBER NE650103M 3M UNITS MIN TYP dBm 39.0 40.0 Linear Gain (at Pin ≤ 23 dBm) dB 10.0 11.0 ηADD Power Added Efficiency % IDSS Saturated Drain Current A 2.0 5.0 7.0 VDS = 2.5 V; VGS = 0 V VP Pinch-Off Voltage V -4.0 -2.5 -1.0 VDS = 2.5 V; IDS = 23 mA RTH Thermal Resistance 4.0 4.5 Channel to Case P1dB GL CHARACTERISTICS 0.15 ± 0.05 2.04 ± 0.3 1.8 ± 0.3 8.54 ± 0.2 PACKAGE OUTLINE SYMBOLS SOURCE DRAIN NEC's NE650103M is a 10 W GaAs MESFET designed for PCS, W-CDMA, WLL transmitter applications. It is capable of delivering 10 Watts of output power with high linear gain, high efficiency and excellent linearity. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures 13.8 ± 0.35 2-φ 3.3 ± 0.3 Power Out at 1dB Gain Compression °C/W MAX TEST CONDITIONS f = 2.3 GHz, VDS = 10.0 V Rg = 100 Ω IDSQ ≤ 1.5 A (RF OFF) 45 California Eastern Laboratories NE650103M ABSOLUTE MAXIMUM RATINGS1 (TC = 25 °C) RECOMMENDED OPERATING LIMITS SYMBOLS SYMBOLS PARAMETERS UNITS RATINGS PARAMETERS UNITS TYP MAX V 10.0 10.0 VDS Drain to Source Voltage V 15 VDS Drain to Source Voltage VGD Gate to Drain Voltage V -18 TCH Channel Temperature °C VGS Gate to Source Voltage V -7.0 GCOMP Gain Compression dB 3.0 Rg Gate Resistance Ω 100 IDS Drain Current A 5 IGF Gate Current mA 45 PT Total Power Dissipation W 33 TCH Channel Temperature °C 175 TSTG Storage Temperature °C -65 to +150 TYPICAL PERFORMANCE CURVES PACKAGE NE650103M-A 3M (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 10 8 7 M D UM DE 15 IM AX EN VGS = -2.0 V M VGS = -1.5 V 1 E 2 20 M VGS = -1.0 V T LU 3 CO VGS = -0.5 V 25 RE 4 30 SO VGS = 0 V 5 33 W AB 6 Total Power Dissipation, PD (W) 35 IDS = 1 A/Div VDS = 0.5 V/Div VGS = -0.5 V 9 Drain Current, (A) ORDERING INFORMATION PART NUMBER Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 150 10 VGS = -2.5 V 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Drain To Source Voltage, (V) 4.5 5.0 0 18 43 50 100 150 Case Temperature, TC (°C) 175 200 NE650103M TYPICAL PERFORMANCE CURVES (TA = 25°C) OUTPUT POWER AND POWER ADDED EFFICIENCY Pout 35 60 30 40 PAE 25 20 20 0 15 5 10 15 20 25 0 40 35 60 30 40 25 20 0 0 10 Input Power, PIN (dBm) 60 30 40 25 20 20 20 25 30 3 ID (DSQ = 1.5 A) IG (DSQ = 1 A) IG (DSQ = 2 A) 30 f =1.96 GHz VDS = 10 V 20 2 10 1 0 0 -10 10 15 20 25 30 Input Power, PIN (dBm) -35 -40 -45 -50 -55 IDSQ = 1 A IDSQ = 1.5 A IDSQ = 2 A 25 30 35 2-Tone Output Power, POUT (dBm) 35 Gate Current, IG (mA) Drain Current, IDS (A) ID (DSQ = 1 A) ID (DSQ = 2 A) IG (DSQ = 1.5 A 35 -30 20 35 Input Power, PIN (dBm) 4 30 VDS = 10 V, F1 = 1.9575 GHz F2 = 1.9575 GHz -25 -60 0 15 Intermodulation Distortion, IM3 (dBc) 80 35 10 25 -20 100 Power Added Efficiency, PAE (%) Output Power, POUT (dBm) 40 20 THIRD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER f =1.96 GHz VDS = 10 V Pout (IDSQ = 1 A) Pout (IDSQ = 1.5 A) Pout (IDSQ = 2 A) PAE (IDSQ = 1 A) PAE (IDSQ = 1.5 A) PAE (IDSQ = 2 A) 15 Input Power, PIN (dBm) OUTPUT POWER AND POWER ADDED EFFICIENCY 45 80 20 -20 0 100 VDS = 10 V, IDSQ = 1.5 A Rg = 100 Ω F = 1.5 GHz 40 Power Added Efficiency, PAE (%) 80 Output Power, POUT (dBm) 40 45 100 VDS = 10 V, IDSQ = 1.5 A F = 880 MHz Power Added Efficiency, PAE (%) Output Power, POUT (dBm) 45 OUTPUT POWER AND POWER ADDED EFFICIENCY NE650103M TYPICAL PERFORMANCE CURVES (TA = 25°C) OUTPUT POWER AND POWER ADDED EFFICIENCY 80 60 35 30 40 25 20 Intermodulation Distortion, IM (dBc) 40 -10 100 VDS = 10 V, IDSQ = 1.5 A Rg = 100 Ω F = 2.3 GHz Power Added Efficiency, PAE (%) Output Power, POUT (dBm) 45 INTERMODULATION DISTORTION vs. OUTPUT POWER 10 10 20 25 30 -20 VDS = 10 V, IDSQ = 1.5 A F1=2.2975 GHz F2=2.3025 GHz -25 -30 -35 -40 -45 -50 -55 IM3 -60 IM5 -65 0 20 -15 20 35 25 80 35 60 30 40 25 20 20 0 20 25 30 35 40 Power Added Efficiency, PAE (%) Output Power, POUT (dBm) (VDS = 10 V, IDSQ = 1.5 A) 100 VDS = 10 V, IDSQ = 1.5 A Rg = 100 Ω F = 2.65 GHz 15 40 LARGE SIGNAL IMPEDANCES OUTPUT POWER AND POWER ADDED EFFICIENCY 40 35 2-Tone POUT (dBm) Input Power, PIN (dBm) 45 30 f (GHz) Ω) ZSOURCE (Ω Ω) ZLOAD (Ω) 1.45 4.96 - j3.16 5.60 - j5.02 1.50 3.97 - j2.10 4.94 - j3.49 1.55 2.99 - j1.0 4.32 - j2.22 2.57 2.71 + j0.23 5.50 - j5.58 2.60 2.64 + j0.75 5.36 - j5.07 2.63 2.54 + j1.26 5.16 - j4.59 ZSOURCE ZLOAD Input Power, PIN (dBm) ZSOURCE = Impedance of the input circuit as seen by the Gate ZLOAD = Impedance of the output circuit as seen by the Drain NE650103M TYPICAL SCATTERING PARAMETERS (TA = 25°C) NE650103M VDS = 10 V, IDS = 1.5 A FREQUENCY GHz 0.500 0.550 0.600 0.650 0.700 0.750 0.800 0.850 0.900 0.950 1.000 1.050 1.100 1.150 1.200 1.250 1.300 1.350 1.400 1.450 1.500 1.550 1.600 1.650 1.700 1.750 1.800 1.850 1.900 1.950 2.000 2.050 2.100 2.150 2.200 2.250 2.300 2.350 2.400 2.450 2.500 2.550 2.600 2.650 2.700 2.750 2.800 2.850 2.900 2.950 3.000 S11 MAG 0.950 0.948 0.948 0.949 0.948 0.948 0.947 0.946 0.947 0.946 0.945 0.945 0.944 0.946 0.944 0.946 0.945 0.943 0.946 0.945 0.946 0.943 0.944 0.947 0.945 0.941 0.942 0.943 0.943 0.941 0.941 0.941 0.940 0.943 0.940 0.937 0.941 0.940 0.938 0.936 0.934 0.936 0.931 0.932 0.933 0.928 0.931 0.929 0.926 0.926 0.919 S21 ANG -166.801 -168.706 -170.446 -171.829 -173.218 -174.376 -175.359 -176.410 -177.310 -178.122 -178.884 -179.680 179.680 179.018 178.494 177.696 177.377 176.713 176.203 175.694 175.206 174.704 174.267 173.803 173.482 173.181 172.614 172.143 171.848 171.587 170.947 170.731 170.251 169.966 169.653 169.091 168.801 168.429 167.943 167.735 167.016 166.910 166.433 165.903 165.503 165.138 164.518 164.260 163.713 163.395 162.849 MAG 3.606 3.254 2.975 2.764 2.567 2.371 2.237 2.114 1.946 1.908 1.754 1.726 1.619 1.587 1.520 1.474 1.418 1.372 1.314 1.305 1.232 1.197 1.171 1.116 1.099 1.057 0.984 1.064 0.946 0.954 0.938 0.926 0.867 0.889 0.850 0.861 0.800 0.811 0.804 0.774 0.798 0.717 0.810 0.714 0.722 0.729 0.718 0.654 0.726 0.628 0.673 S12 ANG 95.956 96.181 94.737 94.806 93.386 94.237 92.721 93.772 91.986 94.011 92.389 93.634 92.849 93.493 92.255 93.864 90.651 93.609 90.644 92.051 90.661 90.751 90.113 91.168 88.995 90.847 90.126 91.207 89.272 90.467 91.322 90.115 88.345 94.627 87.056 93.588 87.432 92.862 90.651 92.677 86.676 97.704 84.892 93.323 87.855 91.627 88.300 90.099 88.885 91.463 87.232 MAG 0.012 0.012 0.012 0.013 0.013 0.013 0.013 0.014 0.014 0.014 0.014 0.015 0.015 0.015 0.016 0.016 0.016 0.017 0.016 0.017 0.017 0.018 0.018 0.018 0.018 0.020 0.018 0.021 0.019 0.021 0.021 0.022 0.022 0.024 0.023 0.025 0.023 0.025 0.025 0.025 0.026 0.026 0.025 0.028 0.025 0.028 0.027 0.027 0.028 0.028 0.027 S22 ANG 37.157 40.003 40.653 43.353 44.351 47.341 47.348 51.122 50.382 54.063 54.549 56.452 58.370 59.352 60.851 63.069 63.459 66.542 66.628 68.207 71.154 71.630 73.962 75.812 75.292 79.421 78.550 80.963 83.259 83.928 84.768 87.503 84.489 90.596 85.732 91.344 87.688 91.528 89.490 95.790 88.876 99.096 90.685 99.262 96.290 98.301 100.075 101.006 100.851 107.334 102.471 MAG 0.793 0.793 0.792 0.791 0.791 0.790 0.791 0.790 0.789 0.790 0.788 0.790 0.788 0.788 0.789 0.789 0.788 0.789 0.788 0.790 0.789 0.789 0.791 0.790 0.790 0.787 0.788 0.790 0.787 0.789 0.787 0.787 0.788 0.788 0.789 0.787 0.788 0.789 0.788 0.789 0.790 0.787 0.788 0.787 0.788 0.787 0.785 0.787 0.783 0.782 0.781 ANG 177.824 177.500 176.943 176.613 176.249 175.759 175.507 175.214 174.632 174.326 174.018 173.560 173.352 172.912 172.696 172.332 172.058 171.750 171.399 171.112 170.825 170.545 170.233 169.870 169.605 169.410 168.907 168.664 168.308 167.842 167.763 167.195 166.953 166.278 166.119 165.605 165.134 164.845 164.526 164.073 163.916 163.497 162.977 162.952 162.439 162.298 161.656 161.336 161.071 160.580 160.196 NE650103M TYPICAL SCATTERING PARAMETERS (TA = 25°C) NE650103M VDS = 12 V, IDS = 1.5 A FREQUENCY GHz 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 1.80 1.85 1.90 1.95 2.00 2.05 2.10 2.15 2.20 2.25 2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90 2.95 3.00 S11 MAG 0.953 0.954 0.954 0.954 0.955 0.953 0.951 0.953 0.951 0.952 0.954 0.953 0.954 0.952 0.949 0.952 0.95 0.952 0.954 0.951 0.951 0.951 0.949 0.953 0.951 0.949 0.952 0.951 0.948 0.951 0.951 0.95 0.953 0.951 0.947 0.95 0.948 0.948 0.952 0.946 0.947 0.944 0.94 0.943 0.944 0.939 0.941 0.938 0.931 0.932 0.932 S21 ANG -165.8 -167.4 -168.9 -170.2 -171.3 -172.3 -173.3 -174.3 -175.0 -175.7 -176.2 -176.7 -177.4 -177.8 -178.4 -178.9 -179.2 -179.8 179.9 179.6 179.0 178.7 178.4 178.0 177.8 177.4 177.0 176.7 176.3 175.9 175.7 175.3 175.0 174.8 174.3 174.0 173.8 173.2 173.2 172.8 172.2 172.0 171.5 171.0 170.8 170.5 169.8 169.5 169.0 168.4 168.1 MAG 3.860 3.516 3.201 3.003 2.775 2.566 2.442 2.281 2.132 2.062 1.932 1.876 1.797 1.723 1.675 1.608 1.559 1.500 1.433 1.428 1.330 1.315 1.254 1.209 1.182 1.141 1.060 1.142 1.021 1.024 1.020 0.995 0.963 0.956 0.947 0.934 0.895 0.880 0.894 0.845 0.887 0.778 0.889 0.773 0.777 0.785 0.761 0.707 0.765 0.675 0.718 S12 ANG 95.8 96.4 94.9 95.1 93.8 94.6 92.9 94.5 92.1 94.7 92.5 93.7 93.2 93.3 92.4 93.4 90.8 92.6 90.5 91.1 90.2 89.8 89.9 90.6 88.6 91.1 89.1 92.1 89.1 91.2 91.5 90.8 88.6 94.9 86.9 93.5 87.5 91.5 90.3 90.5 86.2 94.2 84.5 90.5 86.5 89.9 86.9 88.1 88.3 90.0 86.3 MAG 0.010 0.010 0.010 0.010 0.011 0.011 0.011 0.011 0.011 0.011 0.011 0.011 0.011 0.012 0.012 0.012 0.012 0.013 0.012 0.013 0.013 0.013 0.013 0.013 0.013 0.014 0.014 0.014 0.015 0.014 0.015 0.015 0.016 0.015 0.017 0.015 0.017 0.016 0.017 0.016 0.019 0.018 0.018 0.020 0.017 0.020 0.019 0.020 0.019 0.021 0.018 S22 ANG 31.4 32.0 34.3 35.7 37.5 37.8 40.9 41.2 43.1 47.8 46.6 51.1 50.5 53.5 54.7 57.7 56.6 60.4 60.9 61.7 65.5 65.0 66.5 69.5 72.2 70.3 76.5 74.7 78.3 79.4 79.7 79.8 82.9 81.1 84.6 88.7 85.4 91.6 90.5 94.2 90.3 101.1 88.5 100.4 95.2 96.1 98.1 100.5 97.2 103.4 104.3 MAG 0.754 0.755 0.756 0.755 0.754 0.754 0.755 0.755 0.755 0.755 0.756 0.755 0.756 0.756 0.756 0.757 0.758 0.756 0.755 0.757 0.757 0.757 0.758 0.757 0.758 0.758 0.759 0.76 0.759 0.76 0.759 0.759 0.763 0.759 0.76 0.76 0.759 0.76 0.756 0.758 0.757 0.756 0.756 0.754 0.754 0.752 0.75 0.751 0.746 0.746 0.743 ANG 179.0 178.5 178.2 178.0 177.7 177.4 177.2 176.9 176.6 176.4 176.1 175.9 175.8 175.4 175.4 175.1 174.8 174.6 174.2 174.0 173.7 173.3 173.1 172.6 172.4 172.0 171.8 171.7 171.3 171.0 170.9 170.5 170.4 170.0 169.7 169.3 169.1 169.0 168.4 167.8 167.8 167.0 166.6 166.2 165.6 165.2 164.6 164.2 163.8 163.0 162.9 Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 07/28/2003 A Business Partner of NEC Compound Semiconductor Devices, Ltd. 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Concentration Limit per RoHS (values are not yet fixed) Concentration contained in CEL devices -A Not Detected Lead (Pb) < 1000 PPM Mercury < 1000 PPM Not Detected Cadmium < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. 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