APT47N65BC3
650V 47A 0.070Ω
Super Junction MOSFET
TO
-24
7
• Ultra low RDS(ON)
• Increased Power Dissipation
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
• TO-247 or Surface Mount D3PAK Package
All Ratings: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
Symbol
VDSS
ID
D3
Parameter
APT47N65BC3
UNIT
650
Volts
Drain-Source Voltage
47
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±20
Gate-Source Voltage Transient
±30
Total Power Dissipation @ TC = 25°C
417
Watts
Linear Derating Factor
3.33
W/°C
VGSM
PD
TJ,TSTG
TL
dv
/dt
141
Operating and Storage Junction Temperature Range
7
EAR
Repetitive Avalanche Energy
7
Single Pulse Avalanche Energy
°C
260
Drain-Source Voltage slope (VDS = 480V, ID = 47A, TJ = 125°C)
Repetitive Avalanche Current
EAS
-55 to 150
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Volts
50
V/ns
20
Amps
1
4
mJ
1800
STATIC ELECTRICAL CHARACTERISTICS
BVDSS
RDS(on)
IDSS
IGSS
VGS(th)
Characteristic / Test Conditions
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA)
Drain-Source On-State Resistance
2
TYP
650
(VGS = 10V, ID = 30A)
Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V)
UNIT
Volts
0.06
0.07
0.5
25
Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V, TJ = 150°C)
Ohms
μA
250
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.7mA)
MAX
2.10
3
±100
nA
3.9
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG."
Microsemi Website - http://www.microsemi.com
050-7202 Rev B 3-2012
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT47N65BC3
Characteristic
Test Conditions
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
6965
VDS = 25V
2565
2100
f = 1 MHz
210
85
VGS = 10V
260
250
VDD = 300V
29
30
110
105
18
18
27
28
110
295
8
84
670
775
ID = 47A, RG = 5Ω
980
860
INDUCTIVE SWITCHING @ 125°C
1100
1172
1200
985
TYP
MAX
3
ID = 47A @ 25°C
INDUCTIVE SWITCHING
VGS = 13V
VDD = 380V
ID = 47A @ 125°C
RG = 5Ω
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
INDUCTIVE SWITCHING @ 25°C
6
VDD = 400V, VGS = 15V
6
MAX
7015
Turn-off Delay Time
tf
TYP
VGS = 0V
Rise Time
td(off)
MIN
VDD = 400V VGS = 15V
ID = 47A, RG = 5Ω
UNIT
pF
nC
ns
μJ
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
Characteristic / Test Conditions
MIN
47
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
141
(VGS = 0V, IS = - 47A)
1.2
Volts
580
650
ns
23
16.5
μC
6
V/ns
Reverse Recovery Time (IS = -47A, dl S/dt = 100A/μs, VR = 350V)
Q rr
Reverse Recovery Charge (IS = -47A, dl S/dt = 100A/μs, VR = 350V)
/dt
Peak Diode Recovery
dv
/dt
Amps
(Body Diode)
t rr
dv
UNIT
5
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
MAX
0.30
62
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.25
0.7
0.20
0.5
Note:
P DM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7202 Rev B 3-2012
0.9
0.15
0.3
0.10
SINGLE PULSE
0.05
0.1
10
-5
t1
t2
t
Duty Factor D = 1 /t2
Peak T J = P DM x Z θJC + T C
0.05
0
10-4
°C/W
4 Starting Tj = +25°C, L = 36.0mH, RG = 25Ω, Peak IL = 10A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS = -ID47A , di/dt = 700A/μs VR = VDSS, TJ = 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
7 Repetitve avalanche causes additional power losses that can be
calculated as PAV=EAR*f
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
0.35
0.30
UNIT
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance Curves
APT47N65BC3
180
VGS =15 & 10V
100
VDS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
80
60
TJ = -55°C
TJ = +25°C
40
TJ = +125°C
20
0
0
1
2
3
4
5
6
7
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TRANSFER CHARACTERISTICS
100
60
5V
40
4.5V
20
4V
0
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
NORMALIZED TO
1.30
V
GS
= 10V @ 23.5A
1.20
1.10
VGS=10V
1.00
VGS=20V
0.90
0.80
0
10
20 30 40 50 60 70 80 90
ID, DRAIN CURRENT (AMPERES)
FIGURE 4, RDS(ON) vs DRAIN CURRENT
1.15
30
20
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 5, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
40
3
1.10
1.05
1.00
0.95
0.90
-50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
I = 47A
D
2.5
V
GS
= 10V
2.0
1.5
1.0
0.5
0
-50
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
5.5V
80
50
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
6V
120
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 8, THRESHOLD VOLTAGE vs TEMPERATURE
050-7202 Rev B 3-2012
ID, DRAIN CURRENT (AMPERES)
120
6.5V
140
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
ID, DRAIN CURRENT (AMPERES)
160
Typical Performance Curves
50
100μS
10
5
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Ciss
1,000
Coss
100
Crss
10mS
1
10
100
600
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 9, MAXIMUM SAFE OPERATING AREA
16
I = 47A
D
12
VDS= 120V
8
10,000
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
C, CAPACITANCE (pF)
100
APT47N65BC3
30,000
OPERATION HERE
LIMITED BY R
(ON)
DS
VDS= 300V
VDS= 480V
4
0
0
50 100 150 200 250 300 350 400
Qg, TOTAL GATE CHARGE (nC)
FIGURE 11, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
10
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
188
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, SOURCE-DRAIN DIODE FORWARD VOLTAGE
120
350
V
DD
250
V
DD
R
200
G
100
0
10
20
30
40 50 60
70 80
ID (A)
FIGURE 14, RISE AND FALL TIMES vs CURRENT
0
10
2000
G
V
= 400V
Eoff
= 5Ω
T = 125°C
J
L = 100μH
EON includes
diode reverse recovery.
1500
1000
500
Eon
0
10
SWITCHING ENERGY (μJ)
DD
SWITCHING ENERGY (μJ)
tr
40
20
30
4500
R
3-2012
60
0
40 50 60 70 80
ID (A)
FIGURE 13, DELAY TIMES vs CURRENT
V
050-7202 Rev B
tf
T = 125°C
J
L = 100μH
td(on)
2500
0
= 400V
= 5Ω
20
50
0
G
80
= 400V
= 5Ω
T = 125°C
J
L = 100μH
150
R
100
td(off)
tr and tf (ns)
td(on) and td(off) (ns)
300
DD
= 400V
4000
I = 47A
3500
T = 125°C
J
L = 100μH
Eoff
D
EON includes
3000
diode reverse recovery.
2500
2000
1500
Eon
1000
500
20
30
40 50 60 70 80
ID (A)
FIGURE 15, SWITCHING ENERGY vs CURRENT
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
10%
APT47N65BC3
90%
Gate Voltage
Gate Voltage
TJ = 125 C
TJ = 125 C
td(on)
td(off)
Collector Current
tr
Collector Current
90%
5%
10%
tf
90%
5%
Switching Energy
0
Collector Voltage
Switching Energy
Collector Voltage
10%
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT30DF60
IC
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-247 Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
20.80 (.819)
21.46 (.845)
Drai n
4.50 (.177) Max.
0.40 (.016)
1.016(.040)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate
Drai n
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
050-7202 Rev B 3-2012
V DD