APT31N80JC3
800V 31A 0.145Ω
Super Junction MOSFET
S
S
COOLMOS
27
2
T-
D
G
SO
Power Semiconductors
• Ultra low RDS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
• Popular SOT-227 Package
• N-Channel Enhancement Mode
"UL Recognized"
ISOTOP ®
D
G
Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with
two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
MAXIMUM RATINGS
Symbol
VDSS
ID
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT31N80JC3
UNIT
800
Volts
Drain-Source Voltage
31
Continuous Drain Current @ TC = 25°C
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±20
VGSM
Gate-Source Voltage Transient
±30
Total Power Dissipation @ TC = 25°C
833
Watts
Linear Derating Factor
6.67
W/°C
PD
TJ,TSTG
TL
dv/
dt
IAR
EAR
EAS
1
93
Volts
-55 to 150
Operating and Storage Junction Temperature Range
°C
Lead Temperature: 0.063" from Case for 10 Sec.
300
Drain-Source Voltage slope (VDS = 640V, ID = 31A, TJ = 125°C)
50
V/ns
Repetitive Avalanche Current
7
17
Amps
Repetitive Avalanche Energy
7
Single Pulse Avalanche Energy
0.5
4
mJ
670
STATIC ELECTRICAL CHARACTERISTICS
RDS(on)
IDSS
IGSS
VGS(th)
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 500µA)
Drain-Source On-State Resistance
2
TYP
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V)
UNIT
Volts
800
(VGS = 10V, ID = 22A)
0.125
0.145
0.5
25
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TJ = 150°C)
Ohms
µA
250
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2mA)
MAX
2.10
3
±200
nA
3.9
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG"
6-2006
BVDSS
Characteristic / Test Conditions
050-7143 Rev E
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT31N80JC3
Test Conditions
Characteristic
MIN
TYP
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
2050
Reverse Transfer Capacitance
f = 1 MHz
110
VGS = 10V
180
VDD = 400V
22
Crss
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
ID = 31A @ 25°C
td(off)
tf
ID = 31A @ 125°C
RG = 2.5Ω
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
INDUCTIVE SWITCHING @ 25°C
6
70
80
6
9
ns
615
VDD = 533V, VGS = 15V
6
nC
15
VDD = 400V
Fall Time
355
25
VGS = 10V
Turn-off Delay Time
pF
90
RESISTIVE SWITCHING
Rise Time
UNIT
4510
VGS = 0V
3
MAX
ID = 31A, RG = 5Ω
530
INDUCTIVE SWITCHING @ 125°C
1025
VDD = 533V, VGS = 15V
ID = 31A, RG = 5Ω
µJ
580
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
MIN
Characteristic / Test Conditions
TYP
MAX
31
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -31A, dl S/dt = 100A/µs, VR = 400V)
855
ns
Q rr
Reverse Recovery Charge (IS = -31A, dl S/dt = 100A/µs, VR = 400V)
30
µC
dv/
Peak Diode Recovery
dt
dv/
93
(Body Diode)
1
(VGS = 0V, IS = - 31A)
dt
1.2
Amps
Volts
6
V/ns
MAX
UNIT
5
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
0.37
62
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 115.92mH, RG = 25Ω, Peak IL = 3.4A
5 IS = -31A di/dt = 100A/µs VR = 480V TJ = 125°C
6 Eon includes diode reverse recovery. See figures 18, 20.
7 Repetitve avalanche causes additional power losses that can be
calculated as PAV=EAR*f
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.9
0.30
0.7
0.25
0.20
0.5
Note:
0.15
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7143 Rev E
6-2006
0.40
0.35
0.3
0.10
0
t1
t2
0.05
0.1
0.05
10-5
Duty Factor D = t1/t2
SINGLE PULSE
10-4
10-3
°C/W
Peak TJ = PDM x ZθJC + TC
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
TC ( C)
0.226
ZEXT
0.144
Dissipated Power
(Watts)
0.00671
0.141
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
ID, DRAIN CURRENT (AMPERES)
TJ ( C)
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
80
TJ = -55°C
70
60
50
40
30
TJ = +25°C
20
TJ = +125°C
0 1 2
3 4
5 6 7
8
9 10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
40
5.5V
30
5V
20
4.5V
10
4V
0
2
4
6
8
10
12
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
NORMALIZED TO
V
= 10V @ 17A
GS
1.30
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
0.80
0
1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
30
25
20
15
10
5
0
25
50
75
100
125
150
I
V
2.5
D
1.05
1.00
0.95
0.90
0.85
0.80
-50
0
50
100
150
= 17A
GS
= 10V
2.0
1.5
1.0
0.5
0
-50
1.10
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
3.0
60
FIGURE 5, RDS(ON) vs DRAIN CURRENT
FIGURE 4, TRANSFER CHARACTERISTICS
35
10
20
30
40
50
ID, DRAIN CURRENT (AMPERES)
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
1.1
1.0
0.9
0.8
6-2006
0
6.5V
6V
0.7
0.6
-50
-25
0
25
50
75
100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7143 Rev E
10
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
ID, DRAIN CURRENT (AMPERES)
90
VGS =15 & 10V
0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
100
APT31N80JC3
50
Typical Performance Curves
APT31N80JC3
20,000
10,000
Graph removed
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
Ciss
1000
Coss
100
Crss
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I
D
= 31A
12
VDS= 160V
8
VDS= 400V
VDS= 640V
4
0
0
50
100
150
200
250
300
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
10
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
80
td(off)
160
V
DD
R
G
G
100
= 5Ω
T = 125°C
J
L = 100µH
80
60
td(on)
20
J
L = 100µH
50
40
30
0
10
tr
10
0
20
30
40
50
60
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
30
40
50
60
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
0
4000
2000
V
DD
R
G
= 5Ω
EON includes
diode reverse recovery.
1000
Eoff
Eon
SWITCHING ENERGY (µJ)
SWITCHING ENERGY (µJ)
L = 100µH
500
DD
= 533V
3500
I
3000
L = 100µH
E ON includes
D
20
= 31A
Eoff
T = 125°C
J
J
1500
10
V
= 533V
T = 125°C
6-2006
tf
T = 125°C
20
40
050-7143 Rev E
= 533V
= 5Ω
60
= 533V
tr and tf (ns)
120
DD
R
70
140
td(on) and td(off) (ns)
100
90
180
0
200
diode reverse recovery.
2500
2000
Eon
1500
1000
500
0
0
10
20
30
40
50
60
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT31N80JC3
Gate Voltage
10 %
90%
Gate Voltage
td(off)
T = 125 C
J
td(on)
T = 125 C
J
90%
Drain Voltage
Drain Current
90%
5%
tr
t
f
5%
10%
Drain Voltage
10 %
0
Switching Energy
Drain Current
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT15DF100
V DD
IC
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Source
30.1 (1.185)
30.3 (1.193)
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
ISOTOP® is a Registered Trademark of SGS Thomson.
Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
6-2006
r = 4.0 (.157)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
050-7143 Rev E
7.8 (.307)
8.2 (.322)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)