COMCHIP SMD Schottky Barrier Diode SMD Diodes Specialist CDBF0230L (Lead-free Device) Io = 200 mA V R = 30 Volt s Features Low forward Voltage Designed for mounting on small surface. 1005(2512) Extremely thin/leadless package. 0.102(2.60) 0.095(2.40) Majority carrier conduction. 0.051(1.30) 0.043(1.10) Mechanical data Case: SOD-323F (2512) Standard package , molded plastic. 0.035(0.90) Terminals: Gold plated, solderable per MIL-STD-750, method 2026. 0.027(0.70) 0.020(0.50) Typ. Polarity: Indicated by cathode band. 0.012 (0.30) Typ. Mounting position: Any. 0.020(0.50) Typ. Weight: 0.006 gram (approximately). Dimensions in inches and (millimeter) Maximum Rating ( at T A = 25 C unless otherwise noted ) Parameter Conditions Repetitive peak reverse voltage Symbol Min Typ Max Unit V RRM 35 V Reverse voltage VR 30 V Average forward rectified current Io 200 mA I FSM 1 A Forward current , surge peak 8.3 ms single half sine-wave superimposed on rate load ( JEDEC method ) Storage temperature T STG -40 +125 C Junction temperature Tj -40 +125 C Electrical Characteristics ( at T A = 25 C unless otherwise noted ) Conditions Parameter Symbol Min Typ Max Unit Forward voltage I F = 200 mA VF 0.5 V Reverse current V R = 10 V IR 30 uA REV:A QW-A1026 Page 1 COMCHIP SMD Schottky Barrier Diode SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBF0230L) Fig. 1 - Forward characteristics Fig. 2 - Reverse characteristics 1000 1m Reverse current ( A ) C 100 C o C 25 o o 25 75 10 C 5 o 12 Forward current (mA ) 75 C 1 100u 25 C 10u 1u 25 C 100n 10n 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 5 0 Forward voltage (V) 15 20 25 30 Reverse voltage (V) Fig. 3 - Capacitance between terminals characteristics Fig. 4 - Current derating curve 100 Average forward current ( % ) Capacitance between terminals (pF) 10 10 1 0 5 10 15 20 25 Reverse voltage (V) 30 100 80 60 40 20 0 0 25 50 75 100 125 Ambient temperature ( C ) REV:A QW-A1026 Page 2