COMCHIP CDBFR0540

SMD Schottky Barrier Diode
SMD Diodes Specialist
CDBFR0540 (RoHs Device)
I O = 500 mA
V R = 40 Volts
Features
1005(2512)
Low forward voltage.
0.102(2.60)
0.095(2.40)
Designed for mounting on small surface.
Extremely thin/leadless package.
0.051(1.30)
0.043(1.10)
Majority carrier conduction.
Mechanical data
Case: 1005(2512) standard package,
molded plastic.
0.035(0.90)
0.027(0.70)
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
0.020(0.50) Typ.
Polarity: Indicated by cathode band.
Mounting position: Any
0.040(1.00) Typ.
Weight: 0.006 gram(approx.).
Dimensions in inches and (millimeter)
Maximum Rating (at T A =25 C unless otherwise noted)
O
Parameter
Conditions
Repetitive Peak reverse voltage
Symbol Min Typ Max Unit
V RM
40
V
Reverse voltage
VR
40
V
Average forward rectified current
IO
500
mA
I FSM
5.5
Forward current, surge peak
8.3 ms single half sine-wave superimposed
on rate load (JEDEC method)
Storage temperature
T STG
Junction temperature
Tj
-40
A
+125
O
+125
O
C
C
Electrical Characteristics (at T A =25 C unless otherwise noted)
O
Parameter
Forward voltage
Reverse current
Conditions
I F = 0.5 A
IF = 1 A
I F = 0.5 A
IF = 1 A
V R = 20V
V R = 40V
V R = 20V
V R = 40V
Symbol Min Typ Max Unit
O
@Ta = 25 O C
@Ta = 25 CO
@Ta = 100 O C
@Ta = 100 C
O
@Ta = 25 C
O
@Ta = 25 C
O
@Ta = 100 C
O
@Ta = 100 C
0.51
0.64
0.46
0.62
10
20
2
5
VF
IR
Capacitance between terminals
f = 1 MHz, and 0 VDC reverse voltage
CT
Reverse recovery time
I F = I R = 10mA, Irr = 0.1 X I R , R L = 100ohm
Trr
170
22
V
uA
pF
ns
REV:A
QW-A1079
Page 1
SMD Schottky Barrier Diode
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CDBFR0540)
Fig. 1 - Forward characteristics
Fig. 2 - Reverse characteristics
10m
1000
1 25 C
100
Reverse current ( A )
Forward current (mA )
1m
10
1
0.1
75 C
100u
10u
25 C
1u
100n
-25 C
10n
0
0
0.1
0.2
0.3
0.4
0.5
0.6
1n
0.7
0
10
Forward voltage (V)
Average forward current ( % )
Capacitance between terminals(pF)
100
80
60
40
20
0
5
10
15
Reverse voltage (V)
Fig. 4 - Current derating curve
120
f=1MHz
Ta = 25 C
0
40
Reverse voltage (V)
Fig. 3 - Capacitance between
terminals characteristics
120
30
20
20
100
80
60
40
20
0
0
25
50
75
100
125
150
Ambient temperature ( C )
REV:A
QW-A1079
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