COMCHIP SMD Schottky Barrier Diode SMD Diodes Specialist CDBF0140R (Lead-free Device) Io = 100 mA V R = 40 Volt s Features Low forward Voltage 1005(2512) Designed for mounting on small surface. 0.102(2.60) 0.095(2.40) Extremely thin/leadless package. 0.051(1.30) 0.043(1.10) Majority carrier conduction. Mechanical data Case: 1005 (2512) Standard package , molded plastic. 0.035(0.90) 0.027(0.70) 0.020(0.50) Typ. Terminals: Gold plated, solderable per MIL-STD-750, method 2026. 0.012 (0.30) Typ. Polarity: Indicated by cathode band. Mounting position: Any. 0.020(0.50) Typ. Dimensions in inches and (millimeter) Weight: 0.006 gram (approximately). Maximum Rating ( at T A = 25 C unless otherwise noted ) Parameter Conditions Peak reverse voltage Symbol Min Typ Max Unit V RM 45 V Reverse voltage VR 40 V Average forward rectified current Io 100 mA I FSM 1 A Forward current , surge peak 8.3 ms single half sine-wave superimposed on rate load ( JEDEC method ) Storage temperature T STG -40 +125 C Junction temperature Tj -40 +125 C Electrical Characteristics ( at T A = 25 C unless otherwise noted ) Conditions Parameter Symbol Min Typ Max Unit Forward voltage I F = 10 mA VF 0.45 Reverse current V R = 10 V IR 1 Capacitance between terminals f = 1MHz, and 10 VDC reverse voltage CT 6 V uA pF REV:A QW-A1016 Page 1 COMCHIP SMD Schottky Barrier Diode SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBF0140R) Fig. 1 - Forward characteristics Fig. 2 - Reverse characteristics 1m 1000 Reverse current ( A ) 100 10 125 C 75 C 25 C O O 1 O 25 C Forward current (mA ) 100u O 125 O C 10u 75 O C 1u 100n 25O C 10n O 25 C 1n 0.1 0 0.2 0.4 0.6 0.8 0 1.0 10 Forward voltage (V) 20 30 40 Reverse voltage (V) Fig. 3 - Capacitance between terminals characteristics Fig. 4 - Current derating curve Average forward current ( % ) Capacitance between terminals (pF) 100 10 1 100 80 60 40 20 0 0 5 10 15 20 25 30 Reverse voltage (V) 35 40 0 25 50 75 100 125 Ambient temperature ( C ) REV:A QW-A1016 Page 2