CDBUR0140L

SMD Schottky Barrier Diode
CDBUR0140L
I o = 100 mA
V R = 40 Volts
RoHS Device
Features
0603/SOD-523F
0.071(1.80)
0.063(1.60)
- Low forward voltage.
-Designed for mounting on small surface.
-Extremely thin / leadless package.
0.039(1.00)
0.031(0.80)
-Majority carrier conduction.
Mechanical data
0.033(0.85)
-Case: 0603/SOD-523F standard package,
molded plastic.
0.027(0.70)
0.018(0.45) Typ.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Polarity: Indicated by cathode band.
-Mounting position: Any.
0.028(0.70) Typ.
-Weight: 0.003 gram(approx.).
Dimensions in inches and (millimeter)
Maximum Rating (at T A =25 C unless otherwise noted)
O
Parameter
Conditions
Repetitive Peak reverse voltage
45
V
VR
40
V
IO
100
mA
I FSM
1
V RRM
Reverse voltage
Average forward rectified current
Forward current,surge peak
Symbol Min Typ Max Unit
8.3 ms single half sine-wave superimposed
on rate load (JEDEC method)
Storage temperature
T STG
Junction temperature
Tj
-40
A
+125
O
+125
O
C
C
Electrical Characteristics (at T A =25 C unless otherwise noted)
O
Parameter
Conditions
Symbol Min Typ Max Unit
Forward voltage
I F = 100mA
I F = 10mA
VF
0.55
0.34
Reverse current
V R = 10V
IR
30
Capacitance between terminals
f = 1 MHz, and 10 VDC reverse voltage
CT
6
V
uA
pF
REV:A
QW-A1058
Page 1
SMD Schottky Barrier Diode
RATING AND CHARACTERISTIC CURVES (CDBUR0140L)
Fig. 1 - Forward characteristics
Fig. 2 - Reverse characteristics
10m
1000
Reverse current ( A )
C
O
C
O
-25
25
O
75
5
O
C
10
C
100
12
Forward current (mA )
1m
O
75 C
100u
10u
O
25 C
1u
100n
O
-25 C
10n
1
1n
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
10
40
Reverse voltage (V)
Forward voltage (V)
Fig. 3 - Capacitance between
terminals characteristics
Fig.4 - Current derating curve
15
Average forward current(%)
Capacitance between terminals ( P F)
30
20
12
9
6
3
100
80
60
40
20
0
0
0
10
20
30
Reverse voltage (V)
40
0
25
50
75
100
125
150
O
Ambient temperature ( C)
REV:A
QW-A1058
Page 2