SMD Schottky Barrier Diode SMD Diodes Specialist CDBUR0240(RoHs Device) Io = 200 mA V R = 40 Volts Features 0603(1608) Designed for mounting on small surface. 0.071(1.80) 0.063(1.60) Extremely thin/leadless package. Majority carrier conduction. 0.039(1.00) 0.031(0.80) Mechanical data Case: 0603(1608) standard package, molded plastic. 0.033(0.85) Terminals: Gold plated, solderable per MIL-STD-750,method 2026. 0.027(0.70) 0.018(0.45) Typ. Polarity: Indicated by cathode band. Mounting position: Any Weight: 0.003 gram(approx.). 0.028(0.70) Typ. Dimensions in inches and (millimeter) Maximum Rating (at T A =25 C unless otherwise noted) O Parameter Conditions Repetitive peak reverse voltage Symbol Min Typ Max Unit V RRM 45 V Reverse voltage VR 40 V Average forward current IO 200 mA Forward current,surge peak 8.3 ms single half sine-wave superimposed on rate load(JEDEC method) Power Dissipation I FSM 2000 PD Sunction temperature T STG Junction temperature Tj mA 150 -40 mW +125 O +125 O C C Electrical Characteristics (at T A =25 C unless otherwise noted) O Parameter Conditions Symbol Min Typ Max Unit Forward voltage I F = 200 mA DC VF 0.45 0.55 V Reverse current V R = 30V IR 1 10 uA Capacitance between terimnals F = 1 MHZ and 10 VDC reverse voltage CT 9 pF REV:A QW-A1070 Page 1 SMD Schottky Barrier Diode SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBUR0240) Fig. 1 - Forward characteristics Fig. 2 - Reverse characteristics 10m Reverse current ( A ) 100 10 C 25 0.01 -25 0.1 C 1 125 C 75 C Forward current (mA ) 1000 1m 125 C 100u 75 C 10u 25 C 1u 100n -25 C 10n 1n 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 10 Forward voltage (V) 30 40 Reverse voltage (V) Fig. 3 - Capacitance between terminals characteristics Fig. 4 - Current derating curve 100 Average forward current ( % ) Capacitance between terminals (pF) 20 f = 1 MHz Ta = 25 C 10 Mounting on glass epoxy PCBs 100 80 60 40 20 0 1 0 5 10 15 20 25 30 Reverse voltage (V) 35 0 25 50 75 100 125 150 Ambient temperature ( C ) REV:A QW-A1070 Page 2