COMCHIP CDBUR0240

SMD Schottky Barrier Diode
SMD Diodes Specialist
CDBUR0240(RoHs Device)
Io = 200 mA
V R = 40 Volts
Features
0603(1608)
Designed for mounting on small surface.
0.071(1.80)
0.063(1.60)
Extremely thin/leadless package.
Majority carrier conduction.
0.039(1.00)
0.031(0.80)
Mechanical data
Case: 0603(1608) standard package,
molded plastic.
0.033(0.85)
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
0.027(0.70)
0.018(0.45) Typ.
Polarity: Indicated by cathode band.
Mounting position: Any
Weight: 0.003 gram(approx.).
0.028(0.70) Typ.
Dimensions in inches and (millimeter)
Maximum Rating (at T A =25 C unless otherwise noted)
O
Parameter
Conditions
Repetitive peak reverse voltage
Symbol Min Typ Max Unit
V RRM
45
V
Reverse voltage
VR
40
V
Average forward current
IO
200
mA
Forward current,surge peak
8.3 ms single half sine-wave superimposed
on rate load(JEDEC method)
Power Dissipation
I FSM
2000
PD
Sunction temperature
T STG
Junction temperature
Tj
mA
150
-40
mW
+125
O
+125
O
C
C
Electrical Characteristics (at T A =25 C unless otherwise noted)
O
Parameter
Conditions
Symbol Min Typ Max Unit
Forward voltage
I F = 200 mA DC
VF
0.45
0.55
V
Reverse current
V R = 30V
IR
1
10
uA
Capacitance between terimnals
F = 1 MHZ and 10 VDC reverse voltage
CT
9
pF
REV:A
QW-A1070
Page 1
SMD Schottky Barrier Diode
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CDBUR0240)
Fig. 1 - Forward characteristics
Fig. 2 - Reverse characteristics
10m
Reverse current ( A )
100
10
C
25
0.01
-25
0.1
C
1
125
C
75 C
Forward current (mA )
1000
1m
125 C
100u
75 C
10u
25 C
1u
100n
-25 C
10n
1n
0.001
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
10
Forward voltage (V)
30
40
Reverse voltage (V)
Fig. 3 - Capacitance between
terminals characteristics
Fig. 4 - Current derating curve
100
Average forward current ( % )
Capacitance between terminals (pF)
20
f = 1 MHz
Ta = 25 C
10
Mounting on glass epoxy PCBs
100
80
60
40
20
0
1
0
5
10
15
20
25
30
Reverse voltage (V)
35
0
25
50
75
100
125
150
Ambient temperature ( C )
REV:A
QW-A1070
Page 2