SMD Schottky Barrier Diode RB521G30-G (RoHS Device) Reverse Voltage: 30 Volts Forward Current: 100 mA E2 E SOD-723 b Features: - + D Small Surface Mounting Type High Reliability E1 Mechanical Data: θ L c Case: Molded plastic SOD-723 Terminals: Solderable per MIL-STD-750, Method θ 2026.1. Symbol Polarity: Indicated by cathode band. A A1 b c D E E1 E2 L θ Mounting position: Any. Marking: F A1 A Inches Millimeters Min. Max. 0.021 0.026 0.020 0.023 0.010 0.014 0.003 0.006 0.022 0.026 0.035 0.043 0.051 0.059 0.008 REF 0.003 0.001 7º REF Min. Max. 0.525 0.650 0.515 0.580 0.250 0.350 0.080 0.150 0.550 0.650 1.100 0.900 1.500 1.300 0.200 REF 0.010 0.070 7º REF Maximum Ratings (at TA=25ºC unless otherwise specified) Parameter Symbol Limits Unit DC reverse voltage VR 30 V Mean rectifying current Io 100 mA IFSM 1 A Junction temperature TJ 125 ºC Storage temperature Tstg -40~+125 ºC Peak forward surge current Electrical Ratings (at TA=25ºC unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF 0.35 V IF=10mA Reverse current IR 10 μA VR=10V “-G” suffix designated RoHS compliant version Comchip Technology Corporation . Tel:510-657-8671 . Fax: 510-657-8921 . www.comchiptech.com Page1 SMD Schottky Barrier Diode RB521G30-G (RoHS Device) Electrical Characteristic Curves (RB521G30-G) Fig. 1 Forward Characteristics Fig. 2 Reverse Characteristics 1 10m 125ºC 125ºC 1m Reverse Current (A) Forward Current (A) 100m 75ºC 10m 25ºC 1m -25ºC 100μ 10μ 75ºC 100μ 10μ 25ºC 1μ -25ºC 100n 10n 1μ 0 0.1 0.2 0.3 0.4 0.5 0.6 Forward Voltage (V) 0 5 10 15 20 25 30 35 Reverse Voltage (V) Capacitance between Terminals (pF) Fig. 3 Capacitiance between Characteristics 20 18 SOD-723 PAD-SIZE 16 14 12 0.6 mm. 10 8 6 4 2 0.7mm. 0 0 5 10 15 20 25 Reverse Voltage (V) 1.2mm. “-G” suffix designated RoHS compliant version Comchip Technology Corporation . Tel:510-657-8671 . Fax: 510-657-8921 . www.comchiptech.com Page2