COMCHIP KBU610-G

Silicon Bridge Rectifiers
KBU600-G thru 610-G (RoHS Device)
Reverse Voltage: 50 ~ 1000 Volts
Forward Current: 6.0 Amp
Features:
A
C
B
D
Diffused Junction
Low Forward Voltage Drop
K
KBU
Max
Dim
Min
22.7 23.70
A
4.10
B
3.80
4.20
4.70
C
1.70
2.20
D
E
10.30 11.30
4.50
6.80
G
5.60
H
4.60
J
25.40
19.30
K
L
16.80 17.80
6.60
7.10
M
5.20
N
4.70
1.20
1.30
P
All Dimensions in mm
L
_ _
High Current Capability
_
+
E
High Reliability
High Surge Current Capability
J
G
Ideal for Printed Circuit Boards
Mechanical Data:
H
Case: Molded Plastic
Terminals: Plated Leads Solderable per MIL
STD-202, Method 208
Weight: 1.7 grams (approx.)
Mounting Position: Any
Marking: Type Number
M
N
P
CHARACTERISTICS
KBU
KBU
KBU
KBU
KBU
KBU
KBU
50
100
200
400
600
800
1000
V
35
70
140
280
420
560
700
V
Symbol 600-G 601-G 602-G 604-G 606-G 608-G 610-G
Peak Repetitive Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM
UNIT
VR
DC Blocking Voltage
VR(RMS)
RMS Reverse Voltage
Average Rectified Output Current @ TA = 100ºC
IO
6.0
A
250
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half Sine-Wave Superimposed on rated load
(JEDEC Method)
IFSM
Forward Voltage (per element) @ IF=3.0A
VFM
1.0
V
IR
10
1.0
mA
Rating for Fusing (t<8.3ms) (Note1)
I2t
166
A2S
Typical Thermal Resistance (Note2)
RθJC
4.2
K/W
Tj TSTG
-65 to +150
ºC
Peak Reverse Current
At Rated DC Blocking Voltage
@TC=25ºC
@TC=100ºC
Operating and Storage Temperature Range
Note:
uA
1. Non-repetitive for t>1ms and <8.3ms.
2. Thermal resistance junction to ambient mounted on PC board with 13.0x13.0x0.03mm thick land areas.
“-G” suffix designated RoHS compliant version
Comchip Technology Corporation . Tel:510-657-8671 . Fax: 510-657-8921 . www.comchiptech.com
Page1
Silicon Bridge Rectifiers
KBU600-G thru 610-G (RoHS Device)
100
IF, Instantaneous FWD Current (A)
I(AV), Average Output Current (A)
6
5
4
3
2
Single Phase Half Wave
60Hz Resistive or Inductive Load
1
0
20
40
60
80
100
120
10
1.0
Tj = 25ºC
Pulse Width = 300ms
0.1
140
0.7
0.8
0.9
1.0
1.1
1.2
1.3
VF, Instanteous FWD Voltage (V)
Tc, CASE TEMPERATURE (ºC)
Fig. 1 Forawrd Current Derating Curve
Fig.2 Typical Forward Characteristics, per element
400
CJ, Capacitance (pF)
250
IFSM, Peak FWD Surge Current (A)
0.6
200
150
100
100
50
Tj=25ºC
8.3ms Single Half Sine-Wave
Jedec Method
0
0
1
10
100
1
10
100
Number of Cycles at 60Hz
VR, Reverse Voltage (V)
Fig.3 MAx Non-Repetitive FWD Surge Current
Fig 4. Typical Junction Capacitance Per Element
“-G” suffix designated RoHS compliant version
Comchip Technology Corporation . Tel:510-657-8671 . Fax: 510-657-8921 . www.comchiptech.com
Page2