Silicon Bridge Rectifiers KBU600-G thru 610-G (RoHS Device) Reverse Voltage: 50 ~ 1000 Volts Forward Current: 6.0 Amp Features: A C B D Diffused Junction Low Forward Voltage Drop K KBU Max Dim Min 22.7 23.70 A 4.10 B 3.80 4.20 4.70 C 1.70 2.20 D E 10.30 11.30 4.50 6.80 G 5.60 H 4.60 J 25.40 19.30 K L 16.80 17.80 6.60 7.10 M 5.20 N 4.70 1.20 1.30 P All Dimensions in mm L _ _ High Current Capability _ + E High Reliability High Surge Current Capability J G Ideal for Printed Circuit Boards Mechanical Data: H Case: Molded Plastic Terminals: Plated Leads Solderable per MIL STD-202, Method 208 Weight: 1.7 grams (approx.) Mounting Position: Any Marking: Type Number M N P CHARACTERISTICS KBU KBU KBU KBU KBU KBU KBU 50 100 200 400 600 800 1000 V 35 70 140 280 420 560 700 V Symbol 600-G 601-G 602-G 604-G 606-G 608-G 610-G Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM UNIT VR DC Blocking Voltage VR(RMS) RMS Reverse Voltage Average Rectified Output Current @ TA = 100ºC IO 6.0 A 250 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half Sine-Wave Superimposed on rated load (JEDEC Method) IFSM Forward Voltage (per element) @ IF=3.0A VFM 1.0 V IR 10 1.0 mA Rating for Fusing (t<8.3ms) (Note1) I2t 166 A2S Typical Thermal Resistance (Note2) RθJC 4.2 K/W Tj TSTG -65 to +150 ºC Peak Reverse Current At Rated DC Blocking Voltage @TC=25ºC @TC=100ºC Operating and Storage Temperature Range Note: uA 1. Non-repetitive for t>1ms and <8.3ms. 2. Thermal resistance junction to ambient mounted on PC board with 13.0x13.0x0.03mm thick land areas. “-G” suffix designated RoHS compliant version Comchip Technology Corporation . Tel:510-657-8671 . Fax: 510-657-8921 . www.comchiptech.com Page1 Silicon Bridge Rectifiers KBU600-G thru 610-G (RoHS Device) 100 IF, Instantaneous FWD Current (A) I(AV), Average Output Current (A) 6 5 4 3 2 Single Phase Half Wave 60Hz Resistive or Inductive Load 1 0 20 40 60 80 100 120 10 1.0 Tj = 25ºC Pulse Width = 300ms 0.1 140 0.7 0.8 0.9 1.0 1.1 1.2 1.3 VF, Instanteous FWD Voltage (V) Tc, CASE TEMPERATURE (ºC) Fig. 1 Forawrd Current Derating Curve Fig.2 Typical Forward Characteristics, per element 400 CJ, Capacitance (pF) 250 IFSM, Peak FWD Surge Current (A) 0.6 200 150 100 100 50 Tj=25ºC 8.3ms Single Half Sine-Wave Jedec Method 0 0 1 10 100 1 10 100 Number of Cycles at 60Hz VR, Reverse Voltage (V) Fig.3 MAx Non-Repetitive FWD Surge Current Fig 4. Typical Junction Capacitance Per Element “-G” suffix designated RoHS compliant version Comchip Technology Corporation . Tel:510-657-8671 . Fax: 510-657-8921 . www.comchiptech.com Page2