Cree® EZ700™ LED Data Sheet CxxxEZ700-Sxx000 Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary optical design and device technology to deliver superior value for high-intensity LEDs. The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern. Additionally, these LEDs are die attachable with conductive epoxy, solder paste or solder preforms, in addition to using the flux eutectic method. These vertically structured, low forward voltage LED chips are approximately 100 microns in height. Cree’s EZ™ chips are tested for conformity to optical and electrical specifications and the ability to withstand 1000 V ESD. These LEDs are useful in a broad range of applications, such as general illumination, automotive lighting and LCD backlighting. FEATURES APPLICATIONS • • EZBright Power Chip LED Rf Performance General Illumination – 200 mW min. & 260 mW min. – 450 nm – Aircraft – 180 mW min. & 240 mW min. – 460 nm – Decorative Lighting – 160 mW min. & 220 mW min. – 470 nm – Task Lighting – Outdoor Illumination • Lambertian Radiation • Conductive Epoxy, Solder Paste or Preforms, • White LEDs or Flux Eutectic Attach • Crosswalk Signals • Thin 100 μm Chip • Backlighting • Low Forward Voltage – 3.6 V Typical at 350 mA • Automotive • Single Wire Bond Structure • 1000 V ESD Threshold Rating CxxxEZ700-Sxx000 Chip Diagram .A CPR3DF Rev Data Sheet: Top View Die Cross Section Bottom View EZBright LED Chip 680 x 680 μm Backside Metallization Gold Bond Pad 130 x 130 μm Cathode (-) t = 100 μm Anode (+); 3 μm AuSn Subject to change without notice. www.cree.com Maximum Ratings at TA = 25°C Note 1 CxxxEZ700-Sxx000 DC Forward Current 500 mA Peak Forward Current 1000 mA LED Junction Temperature 125°C Reverse Voltage 5V Operating Temperature Range -40°C to +100°C Storage Temperature Range -40°C to +120°C Electrostatic Discharge Threshold Rating (HBM) 1000 V Note 2 Typical Electrical/Optical Characteristics at TA = 25°C, If = 350 mA Part Number Note 4 Forward Voltage (Vf, V) Note 3 Reverse Current [I(Vr=5 V), μA] Full Width Half Max (λD, nm) Min. Typ. Max. Max. Typ. C450EZ700-Sxx000 3.0 3.6 3.9 2 21 C460EZ700-Sxx000 3.0 3.6 3.9 2 21 C470EZ700-Sxx000 3.0 3.6 3.9 2 22 Mechanical Specifications Description CxxxEZ700-Sxx000 Dimension Tolerance P-N Junction Area (μm) 650 x 650 ±25 Chip Area (μm) 680 x 680 ±25 100 ±25 130 x 130 ±15 Chip Thickness (μm) Top Au Bond Pad (μm) Au Bond Pad Thickness (μm) Back Contact Metal Area (μm) Back Contact Metal Thickness (μm) 3.0 ±1.0 680 x 680 ±25 3.0 ±1.0 Notes: 1. 2. 3. 4. Maximum ratings are package-dependent. The above ratings were determined using a Au-plated TO39 header without an encapsulant for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). See Cree EZBright Applications Note for assembly-process information. Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the minimum ESD ratings shown. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 350 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average expected by the manufacturer in large quantities and are provided for information only. All measurements were made using a Au-plated TO39 header without an encapsulant. Optical characteristics measured in an integrating sphere using Illuminance E. This peak forward current specification is based on a 400 ms pulse width at a 1/5-duty cycle with a junction temperature of 65°C. Copyright © 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ700 are trademarks of Cree, Inc. CPR3DF Rev. A Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Standard Bins for CxxxEZ700-Sxx000 Radiant Flux LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxEZ700-Sxx000) orders may be filled with any or all bins (CxxxEZ700-0xxx) contained in the kit. All radiant flux and all dominant wavelength values shown and specified are at If = 350 mA. Radiant flux values are measured using Au-plated TO39 headers without an encapsulant. C450EZ700-S26000 300 mW C450EZ700-0221 C450EZ700-0222 C450EZ700-0223 C450EZ700-0224 C450EZ700-0217 C450EZ700-0218 C450EZ700-0219 C450EZ700-0220 280 mW 260 mW 445 nm 447.5 nm 452.5 nm C450EZ700-0213 C450EZ700-0214 C450EZ700-0215 C450EZ700-0216 C450EZ700-0209 C450EZ700-0210 C450EZ700-0211 C450EZ700-0212 C450EZ700-0205 C450EZ700-0206 C450EZ700-0207 C450EZ700-0208 240 mW 220 mW 200 mW 445 nm 447.5 nm 450 nm Dominant Wavelength 452.5 nm Copyright © 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ700 are trademarks of Cree, Inc. 455 nm C450EZ700-S20000 260 mW Radiant Flux 450 nm Dominant Wavelength CPR3DF Rev. A 455 nm Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Radiant Flux Standard Bins for CxxxEZ700-Sxx000 (continued) C460EZ700-S24000 280 mW C460EZ700-0217 C460EZ700-0218 C460EZ700-0219 C460EZ700-0220 C460EZ700-0213 C460EZ700-0214 C460EZ700-0215 C460EZ700-0216 260 mW 240 mW 455 nm 457.5 nm Radiant Flux C460EZ700-0209 C460EZ700-0210 C460EZ700-0211 C460EZ700-0212 C460EZ700-0205 C460EZ700-0206 C460EZ700-0207 C460EZ700-0208 C460EZ700-0201 C460EZ700-0202 C460EZ700-0203 C460EZ700-0204 200 mW 180 mW 455 nm 457.5 nm 460 nm Dominant Wavelength 462.5 nm 465 nm C470EZ700-S22000 C470EZ700-0217 C470EZ700-0218 C470EZ700-0219 C470EZ700-0220 C470EZ700-0213 C470EZ700-0214 C470EZ700-0215 C470EZ700-0216 C470EZ700-0209 C470EZ700-0210 C470EZ700-0211 C470EZ700-0212 260 mW 240 mW 220 mW 465 nm 467.5 nm 470 nm Dominant Wavelength 472.5 nm 475 nm C470EZ700-S16000 220 mW C470EZ700-0205 C470EZ700-0206 C470EZ700-0207 C470EZ700-0208 C470EZ700-0201 C470EZ700-0202 C470EZ700-0203 C470EZ700-0204 200 mW 160 mW 465 nm 467.5 nm 470 nm Dominant Wavelength 472.5 nm Copyright © 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ700 are trademarks of Cree, Inc. 465 nm 220 mW 280 mW Radiant Flux 462.5 nm C460EZ700-S18000 240 mW Radiant Flux 460 nm Dominant Wavelength CPR3DF Rev. A 475 nm Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com EZBright¥ Power Chip LED CxxxEZ700-Sxx000 Characteristic Curves Characteristic Curves These are representative measurements for the EZBright Power Chip LED product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Relative Light Intensity vs Junction Temperature Forward Current vs Forward Voltage 500 100 Relative Light Intensity (%) 450 400 350 If (mA) 300 250 200 150 100 50 0 90 85 80 75 0 0.5 1 1.5 2 2.5 Vf (V) 3 3.5 4 4.5 5 Relative Intensity vs Forward Current 25 120 100 80 60 40 20 0 0 50 100 150 200 250 If (mA) 300 350 400 50 75 100 Junction Temperature (C) 125 Dominant Wavelength Shift vs Junction Temperature Dominant Wavelength Shift (nm) 140 % Relative Intensity 95 450 500 5 4 3 2 1 0 25 50 75 100 Junction Temperature (C) 125 Voltage Shift vs Junction Temperature Dominant Wavelength Shift vs Forward Current 3.0 0 2.5 Voltage Shift (V) Shift (nm) 2.0 1.5 1.0 0.5 -0.1 -0.2 -0.3 0.0 -0.5 0 50 100 150 200 250 If (mA) 300 350 400 450 500 -0.4 25 50 75 100 Junction Temperature (C) 125 CPR3DF Rev. © 2006 Cree, Inc. All Rights Reserved. Copyright © 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ700 are trademarks of Cree, Inc. CPR3DF Rev. A Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Radiation Pattern This is a representative radiation pattern for the EZBright Power Chip LED product. Actual patterns will vary slightly for each chip. Copyright © 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ700 are trademarks of Cree, Inc. CPR3DF Rev. A Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com