Cree® EZ400-n™ Gen 2 LEDs Data Sheet (Cathode-up) CxxxEZ400-Sxx00-2 Cree’s EZBright® LEDs are the latest generation of solid-state n-pad up LED emitters that combine highly efficient InGaN materials with Cree’s proprietary optical design and device technology to deliver superior value for highintensity LEDs. The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern. Additionally, these LEDs are die attachable with conductive epoxy, solder paste or solder preforms, as well as the flux eutectic method. These vertically structured, low forward voltage LED chips are approximately 170 microns in height. Cree’s EZ™ chips are tested for conformity to optical and electrical specifications. These LEDs are useful in a broad range of applications, including wearable devices, video displays and LCD backlighting. FEATURES APPLICATIONS • Lambertian Radiation Pattern • • Cathode-up design (n-pad up) • EZBright LED Technology, binned @ 150 mA – 450 nm – 120+ mW – 460 nm – 120+ mW – 470 nm – 105+ mW – 527 nm – 25+ mW General Illumination –Aircraft – Decorative Lighting – Task Lighting – Outdoor Illumination • Single Color & RGB Packages • White-converted LEDs • Low Forward Voltage (Vf) – 3.25 V Typical at 150 mA • Wearable Devices • Maximum DC Forward Current – 200 mA • Automotive Interior • AuSn Backside Metal for use with Conductive Adhesives, Flux Eutectic Attach, Solder Paste & Solder Preforms • 2 kV Class 2 ESD Rating CxxxEZ400-Sxx00-2 Chip Diagram Backside Ohmic Metallization A CPR3ED Rev Data Sheet: Cathode (-), Ø110 µm Mesa (Junction) 350 x 350 µm 380 x 380 µm Top View Thickness 170 µm Side View Subject to change without notice. www.cree.com Anode (+) Bottom View 1 Maximum Ratings at TA = 25°C Notes 1&3 CxxxEZ400-Sxx00-2 DC Forward Current 200 mA Peak Forward Current (1/10 duty cycle @ 1 kHz) 350 mA LED Junction Temperature 150°C Reverse Voltage 5V Operating Temperature Range -40°C to +100°C LED Chip Storage Temperature Range -40°C to +120°C Recommended Die Sheet Storage Conditions Electrostatic Discharge Threshold (HBM) ≤30°C / ≤85% RH 2000 V Note 2 Electrostatic Discharge Classification (MIL-STD-883E) Class 2 Note 2 Typical Electrical/Optical Characteristics at TA = 25°C, If = 150 mA Part Number Note 3 Forward Voltage (Vf, V) Reverse Current [I(Vr=5V), μA] Full Width Half Max (λD, nm) Min. Typ. Max. Max. Typ. C450EZ400-Sxx00-2 2.9 3.25 3.6 2 21 C460EZ400-Sxx00-2 2.9 3.25 3.6 2 21 C470EZ400-Sxx00-2 2.9 3.25 3.6 2 22 C527EZ400-Sxx00-2 3.0 3.35 3.8 2 35 Mechanical Specifications CxxxEZ400-Sxx00-2 Description Dimension Tolerance P-N Junction Area (μm) 350 x 350 ± 25 Top Area (μm) 380 x 380 ± 25 Bottom Area (μm) 380 x 380 ± 25 Chip Thickness (μm) 170 ± 25 Au Bond Pad Diameter (μm) 110 -15, +5 Au Bond Pad Thickness (μm) 3.0 ± 1.0 Back Ohmic Metal Area (μm) 380 x 380 ± 25 3.0 ± 0.3 Back Ohmic Metal Thickness (μm) Notes: 1. Maximum ratings are package-dependent. The above ratings were determined using a silicone encapsulated chip on MCPCB for characterization. The junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature limit is <325°C (< 5 seconds). See the Cree EZBright Applications Note for assembly-process information. 2. Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is performed on each die. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E. 4. The maximum forward current is determined by the thermal resistance between the LED junction and ambient. It is crucial for the end-product to be designed in a manner that minimizes the thermal resistance from the LED junction to ambient in order to optimize product performance. 5. Specifications are subject to change without notice. 250 Maximum Operating Current (mA) 3. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 150 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by the manufacturer in large quantities and are provided for information only. All measurements were made using a Auplated header without an encapsulant. Optical characteristics were measured in an integrating sphere using Illuminance E. 200 150 100 Rth j-a = 10 °C/W Rth j-a = 20 °C/W Rth j-a = 30 °C/W Rth j-a = 40 °C/W 50 0 25 50 75 100 125 150 Ambient Temperature (°C) © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and EZBright are registered trademarks, and the Cree logo, EZ™ and EZ400-n™ are trademarks of Cree, Inc. ® 2 CPR3ED Rev A (201605) ® Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/chips Standard Bins for CxxxEZ400-Sxx00-2 Radiant Flux (mW) LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxEZ400-Sxxxx-2) orders may be filled with any or all bins (CxxxEZ400-xxxx-2) contained in the kit. All radiant flux and dominant wavelength values shown are specified at If = 20 mA. C450EZ400-S12000-2 150 135 120 445 C450EZ400-0513-2 C450EZ400-0514-2 C450EZ400-0515-2 C450EZ400-0516-2 C450EZ400-0509-2 C450EZ400-0510-2 C450EZ400-0511-2 C450EZ400-0512-2 C450EZ400-0505-2 C450EZ400-0506-2 C450EZ400-0507-2 C450EZ400-0508-2 447.5 450 452.5 455 Radiant Flux (mW) Dominant Wavelength (nm) C460EZ400-S12000-2 C460EZ400-0513-2 C460EZ400-0514-2 C460EZ400-0515-2 C460EZ400-0516-2 C460EZ400-0509-2 C460EZ400-0510-2 C460EZ400-0511-2 C460EZ400-0512-2 C460EZ400-0505-2 C460EZ400-0506-2 C460EZ400-0507-2 C460EZ400-0508-2 150 135 120 455 457.5 460 462.5 465 Dominant Wavelength (nm) © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and EZBright are registered trademarks, and the Cree logo, EZ™ and EZ400-n™ are trademarks of Cree, Inc. ® 3 CPR3ED Rev A (201605) ® Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/chips Standard Bins for CxxxEZ400-Sxx00-2 Radiant Flux (mW) LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxEZ400-Sxxxx-2) orders may be filled with any or all bins (CxxxEZ400-xxxx-2) contained in the kit. All radiant flux and dominant wavelength values shown are specified at If = 20 mA. C470EZ400-S10500-2 C470EZ400-0509-2 C470EZ400-0510-2 C470EZ400-0511-2 C470EZ400-0512-2 C470EZ400-0505-2 C470EZ400-0506-2 C470EZ400-0507-2 C470EZ400-0508-2 C470EZ400-0501-2 C470EZ400-0502-2 C470EZ400-0503-2 C470EZ400-0504-2 135 120 105 465 467.5 470 472.5 475 Dominant Wavelength (nm) Radiant Flux (mW) C527EZ400-S2500-2 C527EZ400-0510-2 C527EZ400-0511-2 C527EZ400-0512-2 C527EZ400-0507-2 C527EZ400-0508-2 C527EZ400-0509-2 C527EZ400-0504-2 C527EZ400-0505-2 C527EZ400-0506-2 C527EZ400-0501-2 C527EZ400-0502-2 C527EZ400-0503-2 60 50 40 25 520 525 530 535 Dominant Wavelength (nm) © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and EZBright are registered trademarks, and the Cree logo, EZ™ and EZ400-n™ are trademarks of Cree, Inc. ® 4 CPR3ED Rev A (201605) ® Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/chips Characteristic Curves These are representative measurements for the EZ LED product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Relative Light Intensity Relative Light Intensity Relative Light Intensity Vs Junction Temperature Relative Intensity vs. Forward Current 200% 150% 100% 50% 0% 0 50 100 150 200 250 300 350 100% 95% 90% 85% 80% 75% 70% 65% 25 50 75 100 125 Junction Temperature (°C) If (mA) Dominant Wavelength Shift Vs Junction Temperature Wavelength Shift vs. Forward Current 6 5 10 DW Shift (nm) DW Shift (nm) 15 5 0 -5 -10 4 3 2 1 0 0 50 100 150 200 250 300 -1 350 25 50 75 100 125 Junction Temperature (°C) If (mA) 0.000 300 -0.100 Voltage Shift (V) If (mA) 350 250 200 150 100 50 -0.200 -0.300 -0.400 -0.500 2 2.5 3 Vf (V) 3.5 4 25 50 © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and EZBright are registered trademarks, and the Cree logo, EZ™ and EZ400-n™ are trademarks of Cree, Inc. CPR3ED Rev A (201605) 75 100 125 150 Junction Temperature (°C) ® 5 150 Voltage Shift Vs Junction Temperature Forward Current vs. Forward Voltage 0 150 ® Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/chips Radiation Pattern This is a representative radiation pattern for the EZBright LED product. Actual patterns will vary slightly for each chip. © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and EZBright are registered trademarks, and the Cree logo, EZ™ and EZ400-n™ are trademarks of Cree, Inc. ® 6 CPR3ED Rev A (201605) ® Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/chips