C O N F I D E N T I A L MWS11-GB11-xx InGaP HBT Gain Block A M I C R O S E M I C O M P A N Y P REVIEW This RFIC amplifier is initially available in a plastic SOT-89 3-Pin package to handle P1dB output power up to 19dBm (5V). The same RFIC will be available later in an advanced Microsemi Gigamite™ package, with significantly smaller footprint for applications where board space is at a premium. Advanced InGaP HBT DC to 6GHz Single +5V Supply Small Signal Gain = 16dB P1dB = 19dBm (5V), f=1GHz SOT-89 3-Pin, & Gigamite Packages Broadband Gain Blocks IF or RF buffer Amplifiers Driver Stage for Power W W W . Microsemi . COM This general purpose amplifier is a low cost, broadband RFIC manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process (MOCVD). This RFIC amplifier was designed as an easily cascadable 50 ohm gain block. The device is self-contained with 50 ohm input and output impedance. Applications include IF and RF amplification in wireless/ wired voice and data communication products and broadband test equipment operating up to 6 GHz. Amps Final Power Amp for Low to Medium Power Applications IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com Broadband Test Equipment Gain (dB), Pout (dBm), Current (A)00 45 f = 5 .7 G H z Vcc = 5 V N o m in a l C u r r e n t 20 m A 40 35 30 25 20 15 10 5 0 -5 -1 0 -2 0 -1 5 -1 0 -5 0 5 MWS11-GB11 P in (d B m ) 10 15 P out G a in C u rre n t PK Plastic SOT-89 3 Pin MWS11GB11-S1 Gigamite MWS11GB11-G1 Note: Available in Tape & Reel. Append the letter “T” to the part number. (i.e. MSW11GB11-S89T) Copyright 2000 Rev. 0.2,2000-12-15 Microsemi 11861 Western Avenue, Garden Grove, CA. 92841. Tel: (714) 898-8121 Page 1 C O N F I D E N T I A L MWS11-GB11-xx InGaP HBT Gain Block A M I C R O S E M I C O M P A N Y P REVIEW DC Supply Voltage..................................................................................................5.0 Vdc Absolute Max. Limit...................................................................................................60mA RF Input Power (Pin)...............................................................................................10 dBm Operating Case Temperature ..........................................................................-40º to +85ºC Storage Temperature.....................................................................................-60º to +150ºC Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal. Note: W W W . Microsemi . COM T a b is GND 1 2 3 R F IN GND RF OUT/ B IA S PK PACKAGE (Top View) PK Plastic SOT-89 3-Pin THERMAL RESISTANCE-JUNCTION TO AMBIENT, θJA THERMAL RESISTANCE-JUNCTION TO CASE, θJC THERMAL RESISTANCE-JUNCTION TO LEAD, θJT XX°C/W 149°C/W XX°C/W Gigamite XX°C/W θJA THERMAL RESISTANCE-JUNCTION TO CASE, θJC THERMAL RESISTANCE-JUNCTION TO LEAD, θJT THERMAL RESISTANCE-JUNCTION TO AMBIENT, XX°C/W XX°C/W Junction Temperature Calculation: TJ = TA + (PD x θJA). The θJA numbers are guidelines for the thermal performance of the device/pc-board system. All of the above assume no ambient airflow. RF IN RF Input pin. A DC blocking capacitor should be used in most applications. GND Ground connection. Traces should be minimized and connect immediately to ground. RF output and bias pin. In the bias network, a resistor is selected to set the DC current into this pin as: R= (VCC − VD ) ICC Note that maximum current limit ICC must not be exceeded and a resistor should always be used. A DC blocking capacitor should also be used. Copyright 2000 Rev. 0.2,2000-12-15 Microsemi 11861 Western Avenue, Garden Grove, CA. 92841. Tel: (714) 898-8121 Page 2 PACKAGE DATA RF OUT / BIAS C O N F I D E N T I A L MWS11-GB11-xx InGaP HBT Gain Block A M I C R O S E M I C O M P A N Y P REVIEW Unless otherwise specified, the following specifications apply over the operating ambient temperature -40°C ≤ TA ≤ +85°C except where otherwise noted. Test conditions: [Enter Test Conditions Here] Parameter Symbol MWS11-GB11-xx Min Typ Max Units DC 16 GHz dBm POWER SUPPLY Application Frequency Range Linear Output Power rd Output 3 Order Intermod Product* Small-Signal Gain Noise Figure Supply Voltage Supply Current Test Conditions f P1dB f=2GHz IP3 G NF VCC 34 f=1 GHz f=1.5 GHz 13 3.3 dBm 16 4 5 60 3.5 4.6 20 dB dB V mA OVERALL Output IP3 Output P1dB Freq = 1000MHz Freq = 1000MHz DC to >6000 5.5 11.3 11.3 11.4 11.5 11.5 9.9 0.05 7.6 <1.8:1 <2.5:1 <1.8:1 <2.5:1 34.5 18.5 Reverse Isolation Freq = 1000MHz 16.5 TA = +85°C 142 T=25°C, VD=5.5V, ICC=70mA Frequency Range 1dB Bandwidth Freq = 100MHz Freq = 1000MHz Freq = 2000MHz Freq = 3000MHz Freq = 4000MHz Freq = 6000MHz 100MHz to 2000MHz Freq = 1000MHz Gain Gain Flatness Noise Figure Input VSWR Output VSWR 6 19 W W W . Microsemi . COM 10.2 MHz GHz dB dB dB dB dB dB dB dB dBm dBm dB THERMAL Maximum Measured Junction Temp at DC Bias Conditions † 1.4x10 5 3.4x10 9 1.8x10 † Years † Years † Years In accordance with Manufacturer design Copyright 2000 Rev. 0.2,2000-12-15 Microsemi 11861 Western Avenue, Garden Grove, CA. 92841. Tel: (714) 898-8121 Page 3 ELECTRICALS TA = +85°C Mean Time Between Failures TA = +25°C TA = -40°C * Output power at 1dB gain compression point, f=1 GHz °C 3 C O N F I D E N T I A L MWS11-GB11-xx InGaP HBT Gain Block A M I C R O S E M I C O M P A N Y P REVIEW W W W . Microsemi . COM Vcc 20 Ω 1 RF IN 2 3 0.01 pF 1.0 µ F 220 nH 150 pF RF OUT 150 pF 50 Ω µ strip Vd 50 Ω µ strip Vcc 1.0 µ F 0.01µ F 20 Ω 1 RF IN 2 3 100 pF TL, /4 150 pF RF OUT 150 pF Copyright 2000 Rev. 0.2,2000-12-15 Vd APPLICATION 50 Ω µ strip 50 Ω µ strip Microsemi 11861 Western Avenue, Garden Grove, CA. 92841. Tel: (714) 898-8121 Page 4 C O N F I D E N T I A L MWS11-GB11-xx InGaP HBT Gain Block A M I C R O S E M I C O M P A N Y P REVIEW PK W W W . Microsemi . COM 3-Pin Plastic TO-89 A K D Dim I A B C D E F G H I J K B J H E F G C MILLIMETERS MIN MAX 4.30 4.70 2.30 2.70 1.30 1.70 0.35 0.45 0.35 0.50 0.30 0.50 1.50 BSC 0.40 0.60 0.50 0.50 3.90 4.30 1.55 1.75 INCHES MIN MAX 0.169 0.185 0.090 0.106 0.051 0.066 0.013 0.017 0.013 0.019 0.011 0.019 0.059 BSC 0.015 0.023 0.019 0.019 0.153 0.169 0.061 0.068 Note: 1. Dimensions do not include mold flash or protrusions; these shall not exceed 0.155mm(.006”) on any side. Lead dimension shall not include solder coverage. MECHANICALS Copyright 2000 Rev. 0.2,2000-12-15 Microsemi 11861 Western Avenue, Garden Grove, CA. 92841. Tel: (714) 898-8121 Page 5 C O N F I D E N T I A L MWS11-GB11-xx InGaP HBT Gain Block A M I C R O S E M I C O M P A N Y P REVIEW W W W . Microsemi . COM NOTES PRODUCT PREVIEW DATA – Information contained in this document is pre-production data, and is proprietary to Microsemi. It may not be modified in any way without the express written consent of Microsemi. Product referred to herein is not guaranteed to achieve preliminary or production status and product specifications, configurations, and availability may change at any time. Copyright 2000 Rev. 0.2,2000-12-15 Microsemi 11861 Western Avenue, Garden Grove, CA. 92841. Tel: (714) 898-8121 Page 6