CYSTEKEC BAS21SG

CYStech Electronics Corp.
Spec. No. : C335SG
Issued Date : 2003.06.10
Revised Date :
Page No. : 1/4
High voltage switching diode
BAS21SG
Description
High voltage switching diode encapsulated in a SOD-323 small plastic SMD package.
Features
•Fast switching speed
•Low forward voltage drop
•Small plastic SMD package
Mechanical Data
• Case: Molded Plastic, JEDEC SOD-323.
• Terminals: Solder plated, solderable per MIL-STD-750 Method 2026
• Polarity: Indicated by cathode band.
• Mounting Position : Any.
• Weight: 0.0045 gram, 0.000159 ounce
Symbol
Outline
SOD-323
BAS21SG
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C335SG
Issued Date : 2003.06.10
Revised Date :
Page No. : 2/4
Absolute Maximum Ratings(Ta=25℃, unless otherwise specified)
• Maximum Temperatures
Storage Temperature Tstg ................................................................................................... -55~+150 °C
Junction Temperature Tj ............................................................................................................. +150 °C
• Maximum Power Dissipation
Total Power Dissipation Ptot (Note)........................................................................................... 200 mW
Derate above 25℃ ……………………………………………………………………….. 1.57mW/℃
• Maximum Voltages and Currents
Continuous Reverse Voltage VR…………………………………………………………………… 250V
Continuous Forward Current IF (Note)…………………………………………………………… 200 mA
Peak Repetitive Forward Current IFRM (Note)………..………………………………………….625 mA
• Thermal Resistance, Junction to Ambient Air RθJA……………………………………….…….635℃/W
Note : Parts mounted on FR-5 board with minimum pad.
Characteristics (Ta=25°C)
Characteristic
Symbol
Reverse Breakdown Voltage
Forward Voltage
(Note)
Reverse Leakage Current (Note)
Diode Capacitance
Reverse Recovery Time
VBR
VF(1)
VF(2)
IR(1)
IR(2)
CD
trr
Condition
IR=100µA
IF=100mA
IF=200mA
VR=200V,Tj=25℃
VR=200V,Tj=150℃
VR=0V, f=1MHz
IF=IR=30mA RL=100Ω
measured at IR=3mA
Min.
Max.
Unit
250
-
1
1.25
100
100
5
V
V
V
nA
µA
pF
-
50
ns
Notes: Pulse test, tp=380µs, duty cycle<2%.
BAS21SG
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C335SG
Issued Date : 2003.06.10
Revised Date :
Page No. : 3/4
Characteristic Curves
Forward Characteristics
Reverse Leakage Current vs Junction Temperature
100
Reverse Leakage Current---I R(μA)
Instantaneous Forward Current---I F(mA)
1000
100
10
1
0.1
10
1
0.1
0.01
0.01
0
1
Instantaneous Forward Voltage---VF(V)
2
0
100
Junction Temperature---Tj(℃)
200
Power Derating Curve
Power Dissipation---P D(mW)
250
200
150
100
50
0
0
50
100
150
200
Ambient Temperature---TA(℃)
BAS21SG
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C335SG
Issued Date : 2003.06.10
Revised Date :
Page No. : 4/4
SOD-323 Dimension
K
A
Marking:
5JS
H
1
2
B
D
Style: Pin 1.Cathode 2.Anode
J
H
E
C
2-Lead SOD-323 Plastic
Surface Mounted Package
CYStek Package Code: SG
*: Typical
Inches
Min.
Max.
0.0630 0.0709
0.0453 0.0531
0.0315 0.0394
0.0098 0.0157
DIM
A
B
C
D
Millimeters
Min.
Max.
1.60
1.80
1.15
1.35
0.80
1.00
0.25
0.40
DIM
E
H
J
K
Inches
Min.
Max.
0.0060
0.0000 0.0040
0.0035 0.0070
0.0906 0.1063
Millimeters
Min.
Max.
0.15
0.00
0.10
0.089
0.177
2.30
2.70
Notes: 1.Controlling dimension : millimeters.
2.Lead thickness specified per L/F drawing with solder plating.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BAS21SG
CYStek Product Specification