CYStech Electronics Corp. Spec. No. : C355N3-A Issued Date : 2004.04.13 Revised Date Page No. : 1/4 High voltage switching diode BAS21N3 Description The BAS21N3 is a general purpose diode fabricated in planar technology and encapsulated in a small SOT-23 plastic SMD package. Features •Fast switching speed : max. 50ns •Small plastic SMD package •General application. •Continuous reverse voltage : max. 200V •Repetitive peak reverse voltage : max. 250V •Repetitive peak forward current : max. 625mA Applications •General purpose switching in e.g. surface mounted circuits. Symbol Outline BAS21N3 2 SOT-23 1 Cathode 3 1：Anode 2：Not Connected 3：Cathode BAS21N3 Not Connected Anode CYStek Product Specification Spec. No. : C355N3-A Issued Date : 2004.04.13 Revised Date Page No. : 2/4 CYStech Electronics Corp. Absolute Maximum Ratings @TA=25℃ Parameter Repetitive peak reverse voltage Continuous reverse voltage Continuous forward current Repetitive peak forward current Non-repetitive peak forward current @square wave, Tj=25℃ prior to surge Symbol VRRM VR IF IFRM t=1µs t=100µs t=10ms Total power dissipation(Note 1) Junction Temperature Storage Temperature IFSM Ptot Tj Tstg Min - Max 250 200 200 625 Unit V V mA mA - 9 3 1.7 250 150 +150 A A A mW °C °C -65 Note 1: Device mounted on an FR-4 PCB. Electrical Characteristics @ Tj=25℃ unless otherwise specified Parameters Symbol Forward voltage VF Reverse current IR Diode capacitance Cd Reverse recovery time trr Conditions IF=100mA IF=200mA VR=200V VR=200V,Tj=150℃ Min Typ. - - - - - VR=0V, f=1MHz when switched from IF=30mA to IR=30mA,RL=100Ω, measured at IR=3mA - Max 1 1.25 100 100 5 Unit V V nA µA pF - 50 ns Thermal Characteristics Symbol Parameter Rth,j-tp Rth, j-a thermal resistance from junction to tie-point thermal resistance from junction to ambient Conditions Value Note 1 330 500 Unit ℃/W ℃/W Note 1: Device mounted on an FR-4 PCB. BAS21N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C355N3-A Issued Date : 2004.04.13 Revised Date Page No. : 3/4 Characteristic Curves Forward Characteristics Reverse Leakage Current vs Junction Temperature 100 Reverse Leakage Current---I R(μA) Instantaneous Forward Current---I F(mA) 1000 100 10 1 0.1 10 1 0.1 0.01 0.01 0 1 Instantaneous Forward Voltage---VF(V) 2 0 100 Junction Temperature---Tj(℃) 200 Power Derating Curve Power Dissipation---P D(mW) 300 250 200 150 100 50 0 0 50 100 150 200 Ambient Temperature---TA(℃) BAS21N3 CYStek Product Specification Spec. No. : C355N3-A Issued Date : 2004.04.13 Revised Date Page No. : 4/4 CYStech Electronics Corp. SOT-23 Dimension Marking: A L JS TE 3 B S 2 1 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 G V Style:Pin.1. Anode 2. Not Connected 3.Cathode C D K H J *: Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BAS21N3 CYStek Product Specification