CYStech Electronics Corp. Spec. No. : C302S Issued Date : 2004.11.26 Revised Date : Page No. : 1/4 Small Signal Schottky diode BAT54S2 Description Planar silicon Schottky barrier diode encapsulated in a SOD-323 very small plastic SMD package. Features •Guard ring protected •Low forward voltage drop •Very small plastic SMD package Applications •Ultra high-speed switching •Voltage clamping •Protection circuits •Blocking diodes Symbol Outline SOD-323 BAT54S2 BAT54S2 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C302S Issued Date : 2004.11.26 Revised Date : Page No. : 2/4 Absolute Maximum Ratings Symbol VR IF IFRM IFSM Ptot Tstg Tj Tamb Parameter continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current total power dissipation storage temperature junction temperature operating ambient temperature Conditions tp≤1s, δ≤0.5 tp<10ms Tamb≤25℃ Min -65 -65 Max 30 200 300 600 200 +150 125 +125 Unit V mA mA mA mW ℃ ℃ ℃ Characteristics (Ta=25°C, unless otherwise specified) Parameter Reverse Breakdown Voltage Forward Voltage (Note 1) Symbol Condition Min. Max. Unit VBR IR=100µA 30 - V VF(1) IF=0.1mA - 240 mV VF(2) IF=1mA - 320 mV VF(3) IF=10mA - 400 mV VF(4) IF=30mA - 500 mV VF(5) IF=100mA - 800 mV Reverse Leakage Current (Note 2) IR VR=25V - 2 µA Diode Capacitance CD - 10 pF Reverse Recovery Time trr VR=1V, f=1MHz when switched from IF= 10mA to IR=10mA; RL=100Ω; measured at IR=1mA - 5 ns Notes: 1.pulse test, tp=380µs, duty cycle<2%. 2.pulse test, tp=300µs, duty cycle<2%. Thermal Characteristics Symbol Parameter Rth j-a thermal resistance from junction to ambient Conditions Value Unit note 1 635 K/W Note 1 : Device mounted on a FR-4 PCB BAT54S2 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C302S Issued Date : 2004.11.26 Revised Date : Page No. : 3/4 Characteristic Curves Forward Current & Forward Voltage Diode Capacitance & Reverse-Biased Voltage 100 250 Diode Capacitance-Cd (pF) Forward Current-IF (mA) 200 150 100 10 50 0 1 0 200 400 600 Forward Voltage-VF (mV) BAT54S2 800 1000 0.1 1 10 100 Reverse Biased Voltage-VR (V) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C302S Issued Date : 2004.11.26 Revised Date : Page No. : 4/4 SOD-323 Dimension Marking: K A 5JVH 2 1 Style: Pin 1.Cathode 2.Anode B D 2-Lead SOD-323 Plastic Surface Mounted Package, CYStek Package Code: S2 J H E C *: Typical Inches Min. Max. 0.0630 0.0709 0.0453 0.0531 0.0315 0.0394 0.0098 0.0157 DIM A B C D Millimeters Min. Max. 1.60 1.80 1.15 1.35 0.80 1.00 0.25 0.40 DIM E H J K Inches Min. Max. 0.0060 REF 0.0000 0.0040 0.0035 0.0070 0.0906 0.1063 Millimeters Min. Max. 0.15 REF 0.00 0.10 0.089 0.177 2.30 2.70 Notes: 1.Controlling dimension : millimeters. 2.Lead thickness specified per L/F drawing with solder plating. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BAT54S2 CYStek Product Specification