CYStech Electronics Corp. Spec. No. : C654J3 Issued Date : 2004.03.18 Revised Date : Page No. : 1/4 NPN Epitaxial Planar Transistor BTD1980J3 Description The BTD1980J3 is a NPN Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Equivalent Circuit Outline BTD1980J3 TO-252 C B E B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd(TA=25℃) Pd(TC=25℃) RθJA RθJC Tj Tstg Limits Unit 130 120 5 4 6 (Note ) 1.5 20 83.3 6.25 150 -55~+150 V V V A A W W °C/W °C/W °C °C Note : Single Pulse Pw≦350µs, Duty≦2%. BTD1980J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C654J3 Issued Date : 2004.03.18 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCEO BVCBO ICBO ICEO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 Cob Min. 120 130 - Typ. - 1000 500 - - Max. 1 2 2 2.5 2.8 200 Unit V V mA mA mA V V pF Test Conditions IC=1mA, IB=0 IC=100µA, IE=0 VCB=100V, IE=0 VCE=50V, IE=0 VEB=5V, IC=0 IC=2A, IB=8mA VCE=4V, IC=2A VCE=4V, IC=1A VCE=4V, IC=2A VCB=10V, IE=0A, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% BTD1980J3 CYStek Product Specification Spec. No. : C654J3 Issued Date : 2004.03.18 Revised Date : Page No. : 3/4 CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 10000 10000 Saturation Voltage---(mV) Current Gain---HFE VCE = 4V 1000 100 10 1 1000 100 1 10 100 1000 10000 1 Collector Current---IC(mA) 1000 10000 On voltage vs Collector Current 10000 10000 VBE (SAT)@IC = 250IB VBE (ON) @VCE = 4V On voltage---(mV) Saturation Voltage---(mV) 100 Collector Current---I C(mA) Saturation Voltage vs Collector Current 1000 100 1000 100 10 1 10 100 1000 1 10000 Collector Current---I C(mA) 10 100 1000 10000 Collector Current---I C(mA) Power Derating Curve Power Derating Curve 1.75 25 1.5 Power Dissipation---PD(W) Power Dissipation---PD(W) 10 1.25 1 0.75 0.5 0.25 20 15 10 5 0 0 0 BTD1980J3 50 100 150 Ambient Temperature---TA(℃) 200 0 50 100 150 Case Temperature---TC(℃) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C654J3 Issued Date : 2004.03.18 Revised Date : Page No. : 4/4 TO-252 Dimension C A Marking: D B D1980 G F L 3 H E K 2 Style: Pin 1.Base 2.Collector 3.Emitter I 1 J 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 *: Typical Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2520 0.2677 0.2125 0.2283 DIM A B C D E F Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.40 6.80 5.40 5.80 DIM G H I J K L Inches Min. Max. 0.0866 0.1102 *0.0906 0.0354 0.0315 0.2047 0.2165 0.0551 0.0630 Millimeters Min. Max. 2.20 2.80 *2.30 0.90 0.80 5.20 5.50 1.40 1.60 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD1980J3 CYStek Product Specification