CYStech Electronics Corp. Spec. No. : C608FP Issued Date : 2005.09.07 Revised Date : Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD2061FP Features • Low saturation voltage, typically VCE(sat)=0.2V at IC/IB=2A/0.2A. • Excellent DC current gain characteristics. • Wide SOA(safe operating area). • Pb-free package. Symbol Outline BTD2061FP TO-220FP B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD PD RθJA RθJC Tj Tstg Limits 80 60 5 3 6 (Note 1) 2 30 62.5 4.167 150 -55~+150 Unit V V V A W °C/W °C/W °C °C Note : 1. Single Pulse , Pw≦380µs,Duty≦2%. BTD2061FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C608FP Issued Date : 2005.09.07 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit BVCBO BVCEO BVEBO ICEO IEBO *VCE(sat) *VBE(sat) *hFE fT Cob 80 60 5 100 - 0.3 8 70 10 10 1 1.5 320 - V V V µA µA V V MHz pF Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IB=0 VCE=60V, IB=0 VEB=4V, IC=0 IC=2A, IB=0.2A IC=2A, IB=0.2A VCE=5V, IC=500mA VCE=5V, IC=500mA, f=5MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE Rank E F Range 100~200 160~320 BTD2061FP CYStek Product Specification Spec. No. : C608FP Issued Date : 2005.09.07 Revised Date : Page No. : 3/4 CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 10000 Saturation Voltage---(mV) Current Gain---HFE 1000 VCE=5V 100 VCE=2V 1000 VCESAT@IC=40IB VCESAT@IC=20IB 100 VCESAT@IC=10IB 10 10 1 10 100 1000 10000 1 100 1000 10000 Collector Current---IC(mA) Collector Current---IC(mA) Power Derating Curve Saturation Voltage vs Collector Current 3 Power Dissipation---PD(W) 10000 Saturation Voltage---(mV) 10 VBESAT@IC=10IB 1000 3 2 2 1 1 0 100 1 10 100 1000 10000 0 50 100 150 200 Ambient Temperature---TA(℃) Collector Current---IC(mA) Power Derating Curve Power Dissipation---PD(W) 40 30 20 10 0 0 50 100 150 200 Case Temperature---TC(℃) BTD2061FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C608FP Issued Date : 2005.09.07 Revised Date : Page No. : 4/4 TO-220FP Dimension Marking: D2061 Style: Pin 1.Base 2.Collector 3.Emitter 4.Collector 3-Lead TO-220FP Plastic Package CYStek Package Code: FP *: Typical Inches Min. Max. 0.169 0.185 0.051 REF 0.110 0.126 0.098 0.114 0.020 0.030 0.043 0.053 0.069 0.059 0.020 0.030 DIM A A1 A2 A3 b b1 b2 c Millimeters Min. Max. 4.300 4.700 1.300 REF 2.800 3.200 2.500 2.900 0.500 0.750 1.100 1.350 1.750 1.500 0.500 0.750 DIM D E e F Φ L L1 L2 Inches Min. Max. 0.408 0.392 0.583 0.598 0.100 TYP 0.106 REF 0.138 REF 1.102 1.118 0.067 0.075 0.075 0.083 Millimeters Min. Max. 10.360 9.960 14.800 15.200 2.540 TYP 2.700 REF 3.500 REF 28.000 28.400 1.700 1.900 1.900 2.100 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD2061FP CYStek Product Specification