CYStech Electronics Corp. Spec. No. : C848N3-A Issued Date : 2004.03.26 Revised Date : 2004.11.08 Page No. : 1/4 Low VCE(sat) NPN Epitaxial Planar Transistor BTD2150N3 Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.1A • Excellent current gain characteristics • Complementary to BTB1424N3 Symbol Outline BTD2150N3 SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd RθJA Tj Tstg Limit Unit 60 60 6 4 7 (Note 1) 225 556 150 -55~+150 V V V A A mW °C/W °C °C Note : 1. Single Pulse Pw≦350µs, Duty≦2%. BTD2150N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C848N3-A Issued Date : 2004.03.26 Revised Date : 2004.11.08 Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VCE(sat) *VBE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. 60 60 6 120 120 100 - Typ. 0.25 90 45 Max. 100 100 0.3 0.5 1.5 820 - Unit V V V nA nA V V V MHz pF Test Conditions IC=100µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=40V, IE=0 VEB=5V, IC=0 IC=400mA, IB=20mA IC=2A, IB=100mA IC=2A, IB=200mA VCE=2V, IC=100mA VCE=2V, IC=500mA VCE=2V, IC=1A VCE=5V, IC=0.1A, f=100MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE 2 Rank Range BTD2150N3 Q 120~270 R 180~390 S 270~560 T 390~820 CYStek Product Specification Spec. No. : C848N3-A Issued Date : 2004.03.26 Revised Date : 2004.11.08 Page No. : 3/4 CYStech Electronics Corp. Characteristic Curves Saturation voltage vs Collector current Current gain vs Collector current 1000 1000 VCE(sat) Saturation voltage---(mV) Current gain---HFE VCE=5V VCE=2V 100 VCE=1V 100 IC=40IB 10 IC=10IB 1 10 1 10 100 1000 Collector current---IC(mA) 1 10000 Saturation votlage vs Collector current 10 100 1000 Collector current---IC(mA) 10000 Power Derating Curve 10000 250 Power Dissipation---PD(mW) VBE(sat)@IC=10IB Saturation voltage---(mV) IC=20IB 1000 200 150 100 50 0 100 1 10 100 1000 Collector current---IC(mA) BTD2150N3 10000 0 50 100 150 200 Ambient Temperature---TA(℃) CYStek Product Specification Spec. No. : C848N3-A Issued Date : 2004.03.26 Revised Date : 2004.11.08 Page No. : 4/4 CYStech Electronics Corp. SOT-23 Dimension Marking: A L 3 B TE CF S 2 1 G V 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 C Style: Pin 1.Base 2.Emitter 3.Collector D K H J *: Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD2150N3 CYStek Product Specification