Spec. No. : C211L3 Issued Date : 2004.11.18 Revised Date : 2005.03.25 Page No. : 1/4 CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor BTD2568L3 Features • High BVCEO, 400V minimum Symbol Outline BTD2568L3 SOT-223 C E C B：Base C：Collector E：Emitter B Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Power Dissipation @TC=25°C Junction Temperature Storage Temperature BTD2568L3 Symbol Limits Unit VCBO VCEO VEBO IC ICP IB Pd Tj Tstg 400 400 6 300 1 200 5 150 -55~+150 V V V mA A mA W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C211L3 Issued Date : 2004.11.18 Revised Date : 2005.03.25 Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICES IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *VBE(on) hFE1 hFE2 *hFE3 *hFE4 fT Cob Min. 400 400 6 50 100 100 40 50 - Typ. 3.5 Max. 100 100 100 0.2 0.4 0.8 0.9 0.9 250 250 - Unit V V V nA nA nA V V V V V MHz pF Test Conditions IC=100µA IC=1mA IE=10µA VCB=400V VCE=360V VEB=5V IC=20mA, IB=2mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=10V, IC=50mA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=50mA VCE=10V, IC=100mA VCE=10V, IC=10mA VCB=20V, IE=0A, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% BTD2568L3 CYStek Product Specification Spec. No. : C211L3 Issued Date : 2004.11.18 Revised Date : 2005.03.25 Page No. : 3/4 CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 10000 Saturation Voltage-(mV Current Gain---HFE VCESAT VCE=10V 100 VCE=5V 1000 IC=30IB 100 IC=20IB IC=10IB 10 10 1 10 100 1000 1 Saturation Voltage vs Collector Current 100 1000 Power Derating Curve 10000 6 Power Dissipation---PD(W Saturation Voltage-(mV 10 Collector Current ---IC(mA) Collector Current ---IC(mA) VBESAT@IC=10IB 1000 5 4 3 2 1 100 0 1 10 100 Collector Current--- IC(mA) BTD2568L3 1000 0 50 100 150 200 Ambient Temperature---TA(℃) CYStek Product Specification Spec. No. : C211L3 Issued Date : 2004.11.18 Revised Date : 2005.03.25 Page No. : 4/4 CYStech Electronics Corp. SOT-223 Dimension A Marking: B CE C 1 2 3 D E Style: Pin 1.Base 2.Collector 3.Emitter F H G a1 I a2 3-Lead SOT-223 Plastic Surface Mounted Package CYStek Package Code: L3 *: Typical Inches Min. Max. 0.1142 0.1220 0.2638 0.2874 0.1299 0.1457 0.0236 0.0315 *0.0906 0.2480 0.2638 DIM A B C D E F Millimeters Min. Max. 2.90 3.10 6.70 7.30 3.30 3.70 0.60 0.80 *2.30 6.30 6.70 DIM G H I a1 a2 Inches Min. Max. 0.0551 0.0709 0.0098 0.0138 0.0008 0.0039 o *13 0o 10 o Millimeters Min. Max. 1.40 1.80 0.25 0.35 0.02 0.10 o *13 0o 10 o Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD2568L3 CYStek Product Specification