Spec. No. : C855L3 Issued Date : 2005.06.17 Revised Date : Page No. : 1/4 CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor BTD1857AL3 Description • High BVCEO • High current capability • Complementary to BTB1236AL3 • Pb-free package Symbol Outline BTD1857AL3 SOT-223 C E C B：Base C：Collector E：Emitter B Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TC=25℃ Junction Temperature Storage Temperature BTD1857AL3 Symbol Limits Unit VCBO VCEO VEBO IC ICP PD Tj Tstg 180 160 5 1.5 3 5 150 -55~+150 V V V A A W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C855L3 Issued Date : 2005.06.17 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) hFE1 hFE2 fT Cob Min. 180 160 5 82 30 - Typ. 140 27 Max. 1 1 0.6 1.5 390 - Unit V V V µA µA V V MHz pF Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=160V, IE=0 VEB=4V, IC=0 IC=1A, IB=100mA VCE=2V, IC=150mA VCE=2V, IC=150mA VCE=2V, IC=500mA VCE=5V, IC=150mA VCB=10V, IE=0, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification of hFE 1 Rank Range BTD1857AL3 P 82~180 Q 120~270 R 180~390 CYStek Product Specification Spec. No. : C855L3 Issued Date : 2005.06.17 Revised Date : Page No. : 3/4 CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 VCE(SAT)@IC=10IB Tj=125℃ Saturation Voltage---(mV) Current Gain---HFE VCE=5V 100 Tj=75℃ Tj=25℃ 100 Tj=125℃ Tj=75℃ Tj=25℃ 10 10 1 10 100 1000 Collector Current---IC(mA) 10 10000 Saturation Voltage vs Collector Current 100 1000 Collector Current---IC(mA) 10000 On Voltage vs Collector Current 1000 1000 Tj=25℃ On Voltage---(mV) Saturation Voltage---(mV) Tj=25℃ Tj=125℃ Tj=75℃ Tj=125℃ Tj=75℃ VBE(SAT)@IC=10IB VBE(ON)@VCE=5V 100 100 1 10 100 1000 10000 1 10 100 1000 10000 Collector Current---IC(mA) Collector Current---IC(mA) Power Derating Curve Power Dissipation---PD(W) 6 5 4 3 2 1 0 0 50 100 150 200 Case Temperature---TC(℃) BTD1857AL3 CYStek Product Specification Spec. No. : C855L3 Issued Date : 2005.06.17 Revised Date : Page No. : 4/4 CYStech Electronics Corp. SOT-223 Dimension A Marking: B DQ C 1 2 3 D E Style: Pin 1.Base 2.Collector 3.Emitter F H G a1 I a2 3-Lead SOT-223 Plastic Surface Mounted Package CYStek Package Code: L3 *: Typical Inches Min. Max. 0.1142 0.1220 0.2638 0.2874 0.1299 0.1457 0.0236 0.0315 *0.0906 0.2480 0.2638 DIM A B C D E F Millimeters Min. Max. 2.90 3.10 6.70 7.30 3.30 3.70 0.60 0.80 *2.30 6.30 6.70 DIM G H I a1 a2 Inches Min. Max. 0.0551 0.0709 0.0098 0.0138 0.0008 0.0039 o *13 0o 10 o Millimeters Min. Max. 1.40 1.80 0.25 0.35 0.02 0.10 o *13 0o 10 o Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD1857AL3 CYStek Product Specification