CYStech Electronics Corp. Spec. No. : C812J3 Issued Date : 2003.05.25 Revised Date : Page No. : 1/4 Low Vcesat PNP Epitaxial Planar Transistor BTB1182J3 Features • Low VCE(sat), VCE(sat)=-0.7 V (typical), at IC / IB = -2A / -0.5A • Excellent current gain characteristics • Complementary to BTD1758J3 Symbol Outline BTB1182J3 TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg Limits Unit -40 -30 -5 -2 -5 (Note) 10 150 -55~+150 V V V A A W °C °C Note : Single Pulse , Pw=10ms BTB1182J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C812J3 Issued Date : 2003.05.25 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -40 -30 -5 82 - Typ. 100 50 Max. -1 -1 -1 560 - Unit V V V µA µA V MHz pF Test Conditions IC=-50µA, IE=0 IC=-1mA, IB=0 IE=-50µA, IC=0 VCB=-20V, IE=0 VEB=-4V, IC=0 IC=-3A, IB=-0.1A VCE=-3V, IC=-0.5A VCE=-5V, IC=-0.1A, f=100MHz VCB=-10V, f =1MHz *Pulse Test : Pulse Width ≤380us, Duty Cycle≤2% Classification Of hFE Rank Range BTB1182J3 P 82~180 Q 120~270 R 180~390 S 270~560 CYStek Product Specification Spec. No. : C812J3 Issued Date : 2003.05.25 Revised Date : Page No. : 3/4 CYStech Electronics Corp. Characteristic Curves Saturation Voltage vs Collector Current Current Gain vs Collector Current 10000 1000 Saturation Voltage---(mV) Current Gain---HFE VCE(SAT)@IC=40IB VCE=6V 100 VCE=3V VCE=1V 1000 IC=20IB IC=40IB 100 IC=10IB 10 10 1 10 100 1000 10000 1 Collector Current---IC(mA) Saturation Voltage vs Collector Current 10000 Power Derating Curve 10000 12 Power Dissipation---PD(W) VCE(SAT )@IC=10IB Saturation Voltage---(mV) 10 100 1000 Collector Current---IC(mA) 1000 100 10 8 6 4 2 0 1 BTB1182J3 10 100 1000 Collector Current---IC(mA) 10000 0 50 100 150 200 Case Temperature---TC(℃) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C812J3 Issued Date : 2003.05.25 Revised Date : Page No. : 4/4 TO-252 Dimension C A Marking: D B B1182 G F L 3 H E 2 K Style: Pin 1.Base 2.Collector 3.Emitter I 1 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 J *: Typical Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2520 0.2677 0.2125 0.2283 DIM A B C D E F Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.40 6.80 5.40 5.80 DIM G H I J K L Inches Min. Max. 0.0866 0.1102 *0.0906 0.0354 0.0315 0.2047 0.2165 0.0551 0.0630 Millimeters Min. Max. 2.20 2.80 *2.30 0.90 0.80 5.20 5.50 1.40 1.60 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1182J3 CYStek Product Specification