Spec. No. : C216N3 Issued Date : 2003.10.07 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTNA06N3 Description • The BTNA06N3 is designed for use in general purpose amplification and switching application. • High current , IC = 0.5A • Low VCE(sat) , VCE(sat) = 0.25V(typ.) at IC/IB = 100mA/10mA • Complementary to BTPA56N3. Symbol Outline BTNA06N3 SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature BTNA06N3 Symbol Limits Unit VCBO VCEO VEBO IC Pd Tj Tstg 80 80 4 500 225 150 -55~+150 V V V mA mW °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C216N3 Issued Date : 2003.10.07 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICEO *VCE(sat) *VBE(on) *hFE1 *hFE2 fT BTNA06N3 Min. 80 80 4 50 50 100 Typ. - Max. 100 100 0.25 1.2 - Unit V V V nA nA V V MHz Test Conditions IC=100µA IC=1mA IE=100µA VCB=80V VCE=60V IC=100mA, IB=10mA VCE=1V, IC=100mA VCE=1V, IC=10mA VCE=1V, IC=100mA VCE=2V, IC=10mA, f=100MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% CYStek Product Specification Spec. No. : C216N3 Issued Date : 2003.10.07 CYStech Electronics Corp. Revised Date : Page No. : 3/4 Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 100 Saturation Voltage---(mV) Current Gain---HFE VCE = 5V VCE = 2V VCE = 1V 10 VCE(SAT) @IC=20IB 100 VCE(SAT) @IC=10IB 10 1 10 100 Collector Current---IC(mA) 1000 1 Saturation Voltage vs Collector Current 10 100 Collector Current---IC(mA) 1000 On Voltage vs Collector Current 1000 On Voltage---(mV) Saturation Voltage---(mV) 1000 VBE(SAT) @IC=10IB VBE(ON) @VCE=1V 100 100 1 10 100 1000 1 10 100 1000 Collector Current---IC(mA) Collector Current---IC(mA) Power Derating Curve Power Dissipation---PD(mW) 250 200 150 100 50 0 0 50 100 150 200 Ambient Temperature---TA(℃) BTNA06N3 CYStek Product Specification Spec. No. : C216N3 Issued Date : 2003.10.07 CYStech Electronics Corp. Revised Date : Page No. : 4/4 SOT-23 Dimension A L Marking: 3 B S TE 1G 2 1 G V 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 C Style: Pin 1.Base 2.Emitter 3.Collector D K H J *: Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTNA06N3 CYStek Product Specification