Spec. No. : C223A3-B Issued Date : 2004.02.18 Revised Date : 2004.02.23 CYStech Electronics Corp. Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTN8050BA3 Description The BTN8050BA3 is designed for use in output amplifier of portable radios in class B push pull operation. Features • High collector current , IC = 1.5A • Low VCE(sat) • Complementary to BTP8550BA3. Symbol Outline BTN8050BA3 TO-92 B：Base C：Collector E：Emitter EBC Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature BTN8050BA3 Symbol Limits Unit VCBO VCEO VEBO IC Pd Tj Tstg 40 25 6 1.5 1 150 -55~+150 V V V A W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C223A3-B Issued Date : 2004.02.18 Revised Date : 2004.02.23 Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) VBE(on) hFE 1 *hFE 2 *hFE 3 fT Cob Min. 40 25 6 80 100 80 100 - Typ. 9 Max. 100 100 0.5 1.2 1 500 - Unit V V V nA nA V V V MHz pF Test Conditions IC=100µA IC=2mA IE=100µA VCB=35V VEB=6V IC=800mA, IB=80mA IC=800mA, IB=80mA VCE=1V, IC=10mA VCE=1V, IC=5mA VCE=1V, IC=100mA VCE=1V, IC=800mA VCE=10V, IC=50mA, f=100MHz VCB=10V, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE 2 Rank Range BTN8050BA3 C 100~180 D 160~300 E 250~500 CYStek Product Specification Spec. No. : C223A3-B Issued Date : 2004.02.18 Revised Date : 2004.02.23 CYStech Electronics Corp. Page No. : 3/4 Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 Current Gain---HFE Saturation Voltage---(mV) HFE@VCE=2V VCE(SAT)@IC=20IB 100 10 100 0.1 1 10 100 1 1000 10 100 1000 Collector Current ---IC(mA) Collector Current--- IC(mA) Saturation Voltage vs Collector Current Cutoff Frequency vs Collector Current Cutoff Frequency---FT(GHZ) 1 Saturation Voltage---(mV) 1000 VBE(SAT)@IC=20IB 100 FT@VCE=2V 0.1 1 10 100 Collector Current ---IC(mA) 1000 1 10 Collector Current---IC(mA) 100 Power Derating Curve Power Dissipation---PD(W) 1.2 1 0.8 0.6 0.4 0.2 0 0 50 100 150 200 Ambient Temperature --- Ta(℃ ) BTN8050BA3 CYStek Product Specification Spec. No. : C223A3-B Issued Date : 2004.02.18 Revised Date : 2004.02.23 CYStech Electronics Corp. Page No. : 4/4 TO-92 Dimension α2 A Marking: B 1 2 3 8050 α3 C D H I G α1 Style: Pin 1.Emitter 2.Base 3.Collector E F 3-Lead TO-92 Plastic Package CYStek Package Code: A3 *: Typical Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 DIM A B C D E F Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTN8050BA3 CYStek Product Specification