DB3 ... DB4 DB3 ... DB4 Bidirectional Si-Trigger-Diodes (DIAC) Bidirektionale Si-Triggerdioden (DIAC) Version 2006-04-27 Breakover voltage Durchbruchspannung 3.9 Type 62.5 Ø 1.9 28 ... 45 V Peak pulse current Max. Triggerimpuls ±2A Glass case Glas-Gehäuse DO-35 SOD-27 Weight approx. Gewicht ca. Ø 0.52 0.13 g Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Dimensions - Maße [mm] Maximum ratings Grenzwerte Power dissipation Verlustleistung TA = 50°C Ptot 150 mW 1) Peak pulse current (120 Hz pulse repetition rate) Max. Triggerstrom (120 Hz Puls-Wiederholrate) tp ≤ 10 µs IPM ± 2 A 1) Tj TS -50...+100°C -50...+175°C Operating Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Characteristics Kennwerte DB3 DB4 VBO VBO 28 ... 36 V 35 ... 45 V Breakover current – Durchbruchstrom V = 98% VBO IBO < 200 µA Asymmetry of breakover voltage Unsymmetrie der Durchbruchspannung |V(BO)F – V(BO)R| ΔVBO < 3.8 V Foldback voltage – Spannungs-Rücksprung ΔI = IBO to/auf IF = 10 mA dV/dt = 10 V/µs ΔVF/R >5V Breakover voltage Durchbruchspannung dV/dt = 10 V/µs Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft 1 RthA < 300 K/W 1) Valid, if leads are kept at ambient temperature at a distance of 10 mm from case Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden © Diotec Semiconductor AG http://www.diotec.com/ 1 DB3 ... DB4 2 http://www.diotec.com/ © Diotec Semiconductor AG