MMBT2369 / MMBT2369A MMBT2369 / MMBT2369A Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage NPN NPN Version 2006-06-02 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1 1.3±0.1 2.5 max 3 Type Code 250 mW SOT-23 (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert 2 1.9 Dimensions - Maße [mm] 1=B 2=E 3=C Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) MMBT2369 MMBT2369A Collector-Emitter-volt. – Kollektor-Emitter-Spannung E-B short VCES 40 V 15 V Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open VCEO 15 V 15 V Collector-Base-voltage – Kollektor-Basis-Spannung E open VCBO 40 V 40 V Emitter-Base-voltage – Emitter-Basis-Spannung C open VEBO 4.5 V Power dissipation – Verlustleistung Ptot 250 mW 1) Collector current – Kollektorstrom (dc) IC 200 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis ) 2 IC = 10 mA, VCE = 1 V IC = 100 mA, VCE = 2 V IC IC IC IC IC = = = = = 10 mA, 10 mA, 10 mA, 30 mA, 100 mA, VCE = VCE = VCE = VCE = VCE = 1V 0.35 V 0.35 V, Tj = -55°C 0.4 V 1V MMBT2369 hFE hFE 40 20 – – 120 – MMBT2369A hFE hFE hFE hFE hFE – 40 20 30 20 – – – – – 120 – – – – Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2) 1 2 IC = 10 mA, IB = 1 mA IC IC IC IC IB = IB = IB = IB = = = = = 10 mA, 10 mA, 30 mA, 100 mA, 1 mA 1 mA, Tj = 125°C 3 mA 10 mA MMBT2369 VCEsat – – 0.25 V MMBT2369A VCEsat VCEsat VCEsat VCEsat – – – – – – – – 0.20 V 0.30 V 0.25 V 0.50 V Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 MMBT2369 / MMBT2369A Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. VBEsat VBEsat VBEsat VBEsat 0.7 V – – – – – – – 0.85 V 1.02 V 1.15 V 1.60 V ICBO ICBO – – – – 0.4 µA 30 µA ICES – – 0.4 µA IC = 10 µA V(BR)CES 40 V – – Collector-Emitter breakdown voltage ) IC = 10 mA V(BR)CEO 15 V – – Collector-Base breakdown voltage IC = 10 µA V(BR)CBO 40 V – – Emitter-Base-breakdown voltage IC = 10 µA V(BR)EBO 4.5 V – – CCBO – – 4 pF hfe 5 – – Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2) IC IC IC IC = = = = 10 mA, 10 mA, 30 mA, 100 mA, IB IB IB IB = = = = 1 mA 1 mA, Tj = -55°C 3 mA 10 mA MMBT2369A Collector-Base cutoff current – Kollektor-Basis-Reststrom VCB = 20 V, (E open) VCB = 20 V, Tj = 125°C, (E open) Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom VCE = 20 V, (B-E short) MMBT2369A Collector-Emitter breakdown voltage 2 Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 5 V, IE = ie = 0, f = 1 MHz Small signal current gain – Kleinsignal-Stromverstärkung VCE = 10 V, IC = 10 mA, f = 100 MHz Switching times – Schaltzeiten storage time IB1 = IB2 = IC = 10 mA ts – 5 ns 13 ns turn-on time VCC = 3 V, IC = 10 mA, IB1 = 3 mA ton – 8 ns 12 ns turn-off time VCC = 3 V, IC = 10 mA IB1 = 3 mA, IB2 = 1.5 mA toff – 10 ns 18 ns Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Marking - Stempelung 2 1 2 RthA < 420 K/W 1) MMBT2369 = 1J MMBT2369A = 1JA Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG