MMBT5401 MMBT5401 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage PNP PNP Version 2007-11-09 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1 1.3±0.1 2.5 max 3 Type Code 250 mW 2 1.9 Dimensions - Maße [mm] 1=B 2=E 3=C SOT-23 (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) MMBT5401 Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open - VCEO 150 V Collector-Base-voltage – Kollektor-Basis-Spannung E open - VCBO 160 V Emitter-Base-voltage – Emitter-Basis-Spannung C open - VEBO 5V Power dissipation – Verlustleistung Ptot 250 mW 1) Collector current – Kollektorstrom (dc) - IC 600 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. 2 DC current gain – Kollektor-Basis-Stromverhältnis ) - VCE = 5 V, - IC = 1 mA - VCE = 5 V, - IC = 10 mA - VCE = 5 V, - IC = 50 mA MMBT5400 hFE hFE hFE 30 40 40 – – – – 180 – - VCE = 5 V, - IC = 1 mA - VCE = 5 V, - IC = 10 mA - VCE = 5 V, - IC = 50 mA MMBT5401 hFE hFE hFE 50 60 50 – – – – 240 – – – – – 0.2 V 0.5 V – – – – 1.0 V 1.0 V Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2) - IC = 10 mA, - IB = 1 mA - IC = 50 mA, - IB = 5 mA - VCEsat - VCEsat Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2) - IC = 10 mA, - IB = 1 mA - IC = 50 mA, - IB = 5 mA 1 2 - VBEsat - VBEsat Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 MMBT5401 Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Collector-Base cutoff current – Kollektor-Basis-Reststrom - VCB = 120 V, (E open) MMBT5401 - ICBO – – 50 nA - VCB = 120 V, Tj = 100°C, (E open) MMBT5401 - ICBO – – 50 µA - IEBO – –- 50 nA fT 100 MHz – 300 MHz CCBO – – 6 pF F – – 8 dB Emitter-Base-cutoff current – Emitter-Basis-Reststrom - VEB = 4 V, (C open) Gain-Bandwidth Product – Transitfrequenz - IC = 10 mA, - VCE = 10 V, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE = ie = 0, f = 1 MHz Noise figure – Rauschzahl - VCE = 5 V, - IC = 200 µA, RS = 10 Ω, f = 1 kHz MMBT5401 Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft < 420 K/W 1) RthA Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren MMBT5551 Marking - Stempelung MMBT5401 = 2Lx 120 [%] 100 80 60 40 20 Ptot 0 0 TA 50 100 150 [°C] 1 Power dissipation versus ambient temperature ) 1 Verlustleistung in Abh. von d. Umgebungstemp. ) 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG