PZT2222 / PZT2222A PZT2222 / PZT2222A Suface Mount Si-Epitaxial Planar Switching Transistors Si-Epitaxie-Planar-Schalttransistoren für die Oberflächenmontage NPN NPN Version 2006-05-09 Power dissipation Verlustleistung 6.5±0.2 1.65 3±0.1 Plastic case Kunststoffgehäuse 1 0.7 2.3 3.5 7±0.3 2 ±0.2 4 Type Code 1.3 W 3 3.25 Dimensions - Maße [mm] 1=B 2/4 = C 3=E SOT-223 Weight approx. Gewicht ca. 0.04 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) PZT2222 PZT2222A Collector-Emitter-volt. - Kollektor-Emitter-Spannung E open VCEO 30 V 40 V Collector-Base-volt. - Kollektor-Basis-Spannung B open VCBO 60 V 75 V Emitter-Base-voltage - Emitter-Basis-Spannung C open VEBO 5V 6V 1 Power dissipation – Verlustleistung Ptot 1.3 W ) Collector current – Kollektorstrom (dc) IC 600 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. Collector-cutoff current – Kollektor-Reststrom IE = 0, VCB = 50 V PZT2222 PZT2222A ICBO ICBO – – – – 20 nA 10 nA IE = 0, VCB = 50 V, Tj = 150°C PZT2222 PZT2222A ICBO ICBO – – – – 20 µA 10 µA IEBO – –- 10 nA Emitter-cutoff current – Emitter-Reststrom IC = 0, VEB = 3 V 2 Collector saturation voltage – Kollektor-Sättigungsspannung ) 1 2 IC = 150 mA, IB = 15 mA PZT2222 PZT2222A VCEsat VCEsat – – – – 0.4 V 0.3 V IC = 500 mA, IB = 50 mA PZT2222 PZT2222A VCEsat VCEsat – – – – 1.6 V 1.0 V Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 PZT2222 / PZT2222A Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. Base saturation voltage – Basis-Sättigungsspannung 2) IC = 150 mA, IB = 15 mA PZT2222 PZT2222A VBEsat VBEsat – – – – 1.3 V 1.2 V IC = 500 mA, IB = 50 mA PZT2222 PZT2222A VBEsat VBEsat – – – – 2.6 V 2.0 V hFE hFE hFE hFE 35 50 75 100 – – – – – – – 300 hFE hFE 30 40 – – – – fT 200 MHz – – CCBO – – 8 pF CEBO – – 30 pf td – – 10 ns tr – – 25 ns ts – – 225 ns tf – – 60 ns DC current gain – Kollektor-Basis-Stromverhältnis IC IC IC IC = = = = 0.1 mA, 1 mA, 10 mA, 150 mA, VCE VCE VCE VCE = = = = 10 10 10 10 V V V V 2) IC = 500 mA, VCE = 10 V 2) PZT2222 PZT2222A Gain-Bandwidth Product – Transitfrequenz IC = 20 mA, VCE = 20 V, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance – Emitter-Basis-Kapazität VEB = 0.5 V, IC = ic = 0, f = 1 MHz Switching times – Schaltzeiten delay time rise time storage time ICon = 150 mA IBon = 15 mA - IBoff = 15 mA fall time Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA < 93 K/W 1) Thermal resistance junction to soldering point Wärmewiderstand Sperrschicht – Lötpad RthS < 27 K/W Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren 2 1 2 PZT2907, PZT2907A Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG