MICROSEMI GC4731

TOC
Control Devices
LIMITER DIODES
DESCRIPTION
APPLICATIONS
The GC4700 series diodes are specially processed PIN
diodes designed for use in passive or active limiters at
frequencies through Ku band.
A diode limiter is a power-sensitive variable attenuator
that uses the non-linear properties of the diode to provide an impedance mismatch when sufficient amounts
of RF power are incident on the device. The output
power is reduced to a level that will not overdrive a receiver, burn out a mixer, etc. For varying input power
levels in excess of the diode’s threshold level, the limiter’s
output power tends to remain constant.
Twelve categories of devices are offered for flexibility
in design of low (lower Vb, fastest turn-on time), medium and high (highest Vb, slowest turn-on time)
power limiters.
λ
4
DC BLOCK
INPUT
DC BLOCK
COARSE
(HIGH
POWER)
LIMITER
DIODE
DC
RETURN
A passive limiter is one in which the limiter diodes are
“turned on” by the RF signal itself. An active limiter is one
in which the limiter diodes are “turned on” primarily by an
external bias current typically supplied by a Schottky detector diode which senses the incident signal.
CLEAN UP
OUTPUT
(FAST)
LIMITER
DIODE
Since limiter diodes are not designed to dissipate large
amounts of power, the limiter must reflect or divert the
excess incident power back to the source or to another
load (i.e. via a circulator, hybrid coupler, etc.).
Limiter diodes may be used in wave guides, coax, microstrip, stripline or other media. Single or cascaded
devices may be used, depending on power levels.
BASIC TWO-DIODE LIMITER
CHIP ELECTRICAL PARAMETERS: TA = 25°C
MODEL
NUMBER
GC4701
GC4702
GC4711
GC4712
GC4713
GC4721
GC4722
GC4723
GC4731
GC4732
GC4741
GC4742
TYPICAL
VB
CJO
CJ6
MIN (VOLTS)
TYP
MAX
IR = 10µA
(pF)
(pF)
20
20
45
45
45
120
120
120
15
15
30
30
0.20
0.50
0.20
0.50
0.70
0.20
0.60
0.80
0.12
0.20
0.12
0.20
0.15
0.30
0.15
0.30
0.50
0.15
0.30
0.50
0.10
0.15
0.10
0.15
RS
@10 mA
(Ohms)
1.5
1.2
1.5
1.2
1.0
1.5
1.0
0.5
2.0
1.5
2.0
1.5
TYPICAL
TYPICAL
TL
θP 1
(nS)
(°C/W)
5
10
10
15
20
50
50
100
5
5
7
7
20
12
15
10
6
1.2
0.5
0.3
30
20
20
15
MAXIMUM
THERMAL
2
RESISTANCE
(°C/W)
100
80
80
60
40
40
20
15
120
80
100
70
1) Pulse length 1 microsecond.
2) As measure in style 30 package.
SEMICONDUCTOR OPERATION
75 Technology Drive • Lowell, MA 01851 • Tel: 978-442-5600 • Fax: 978-937-3748
83
TOC
Control Devices
LIMITER DIODES
TYPICAL LIMITER PERFORMANCE RATINGS: TA = 25°C
MAXIMUM
TYPICAL
MODEL
PEAK
LEAKAGE
NUMBER
PIN
Pout
@1.µS (dBm)
GC4701
GC4702
GC4711
GC4712
GC4713
GC4721
GC4722
GC4723
GC4731
GC4732
GC4741
GC4742
TYPICAL
INSERTION LOSS
(dBm)
(dB)
+10
+10
+15
+15
+15
+20
+20
+20
+7
+7
+12
+12
0.1
0.2
0.1
0.2
0.2
0.1
0.2
0.2
0.1
0.1
0.1
0.1
(dBm)
+50
+53
+53
+56
+59
+60
+63
+66
+47
+50
+47
+50
MAXIMUM
TYPICAL
THRESHOLD
+22
+24
+27
+29
+31
+39
+41
+44
+19
+22
+24
+27
CW
POWER
(Watts)
2
3
3
4
5
5
10
15
2
3
3
4
Notes:
1. Available in standard case styles 30, 35, 42 AND 45. When ordering specify the desired case style by adding its number as a suffix to the
basic part number. Some other case styles are available on request.
TYPICAL PERFORMANCE
+9
LEAKAGE POWER ABOVE 1.0GHz (dB)
POWER OUT (mw)
10,000
1
72
C4
G
+1000
0dB
10dB
20dB
30dB
41
+100
47
01,
47
THRESHOLD
GC
+8
+7
+6
GC4721
+5
+4
+3
+2
+1
GC4701, 4741
0
+10
2
4
6
8
10
12
FREQUENCY (GHz)
+1.0
+10
+20
+30
+40
+50
+60
PEAK POWER INPUT (dBm)
RATINGS
Maximum Leakage Current:
0.5µA at 80% of
minimum rated
breakdown
Operating Temperature:
55°C to +150°C
SEMICONDUCTOR OPERATION
75 Technology Drive • Lowell, MA 01851 • Tel: 978-442-5600 • Fax: 978-937-3748
84
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