EPSON SG

Crystal oscillator
HIGH-FREQUENCY CRYSTAL OSCILLATOR
SG-710 series
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Ceramic package with 1.5 mm thickness.
Excellent shock resistance and environmental capability.
Low current consumption due to use of C-MOS technology.
Low current consumption by output enabled function (OE) or
standby function (ST).
Specifications (characteristics)
f0
Output frequency range
Max. supply voltage
Operating voltage
Storage temperature
Operating temperature
Power source
voltage
Temperature
range
SG-710PTK
SG-710PHK
SG-710ECK
1.8000 MHz to
67.0000 MHz
1.8000 MHz to
80.0000 MHz
1.8000 MHz to
50.0000 MHz
VDD-GND
VDD
TSTG
TOPR
-0.5 V to +7.0 V
5.0 V ±0.5 V
3.3 V ±0.3 V
-55 °C to +125 °C
-10 °C to +70 °C (-40 °C to +85 °C)
Soldering condition
TSOL
Twice at under +260 °C within 10 s
Frequency stability
Current consumption
Output disable current
Standby current
∆f/f0
B: ±50 x 10-6 C: ± 100 x 10-6 M: ± 100 x 10-6
Duty
tw/ t
High output voltage
Low output voltage
Output load
condition (fan out)
VOH
VOL
N
CL
VIH
VIL
Iop
IOE
IST
TTL
C-MOS
Output enable/disable input voltage
Output rise time C-MOS level
TTL level
Output fall time C-MOS level
TTL level
tTLH
tTHL
Oscillation start up time
24 mA Max.
12 mA Max.
45 % to 55 %
2.4 V Min.
0.4 V Max.
10 TTL Max.
(15 pF Max.)
2.0 V Min.
0.8 V Max.
—
5 ns Max.
—
5 ns Max.
18 mA Max.
—
45 % to 55 %
10 µA Max.
40 % to 60 %
40 % to 60 %
VDD -0.5 V Min.
0.5 V Max.
10 TTL Max.
50 pF Max.
2.0 V Min.
0.8 V Max.
5 ns Max.
—
0.9 x VDD Min.
0.1 x VDD Max.
—
15 pF Max.
0.7 x VDD Min.
0.3 x VDD Max.
6 ns Max.
6 ns Max.
10 ms Max.
Time at minimum operating voltage to be 0 s
±5 x 10 /year Max.
Ta= +25 °C, VDD = 5.0 V/3.3 V(ECK)
±10 x 10-6 Max.
Three drops on a hard board from 750 mm
or excitation test with 29400 m/s2 x 0.3 ms x
1/2sine wave in 3 directions
-6
S.R.
(Unit: mm)
Bottom View
1.4
1 OE or ST
2
GND
3
OUT
4
VDD
2.6
40.000
Recommended soldering pattern
NO. Pin terminal
#2
#1
W
E
#3
_
OE terminal(PTK,PHK)
ST terminal(ECK)
C-MOS load: 10 %→90 % VDD
TTL load: 0.4 V→2.4 V
C-MOS load: 90 %→10 % VDD
TTL load: 2.4 V→0.4 V
—
External dimensions
#4
No load condition
OE=GND(PTK, PHK)
ST=GND(ECK)
C-MOS load: 1/2 VDD level
TTL load: 1.4 V level
IOH=-16 mA(PTK,PHK),-2 mA(ECK)
IOL= 16 mA(PTK,PHK), 2 mA(ECK)
—
5 ns Max.
fa
Shock resistance
Please contact us on availability of -40 °C to +85 °C
B,C:-10 °C to +70 °C, M:-40 °C to +85 C°
40 mA Max.
16 mA Max.
—
—
tOSC
Aging
Remarks
Specifications
1.8
2.0
Symbol
Item
HC724A
#2
#4
5.08
#3
4.2
#1
1.5 Max.
L
5.08
37
L
W
PTK/PHK/ECK 7.5 Max. 5.0 Max.
∗∗W
7.2 Max. 5.2 Max.
5.08
(Unit: mm)
Actual size
Specifications (characteristics)
Item
Output frequency range
SG-710PTW/STW
Symbol
f0
∆f/f0
Current consumption
Output disable current
Output disable current
C-MOS level
Duty
TTL level
Iop
IoE
IST
Output voltage
Output load condition (fan out)
Output enable
disable input voltage
C-MOS level
Output
TTL level
rise time
C-MOS level
Output
TTL level
fall time
Oscillation start up time
Aging
Shock resistance
SG-710PCW/SCW
-0.5 V to +7.0 V
5.0 V±0.5 V
3.3 V±0.3 V
-55 °C to +125 °C
-20 °C to +70 °C
-40 °C to +85 °C
Twice at under 260 °C within 10 s or under 230 °C within 3 min.
B: ±50 x 10-6
C: ±100 x 10-6
M: ±100 x 10-6
45 mA Max.
28 mA Max.
30 mA Max.
16 mA Max.
50 µA Max.
—
40 % to 60 %
40 % to 60 %
—
VDD-0.4 V Min.
0.4 V Max.
15 pF Max.
0.7 VDD Min.
2.0 V Min.
0.2 VDD Max.
0.8 V Max.
3 ns Max.
—
3 ns Max.
—
4 ns Max.
—
3 ns Max.
—
3 ns Max.
—
4 ns Max.
—
tw/t
VOH
VOL
CL
VIH
VIL
tTLH
tTHL
Remarks
66.6667 MHz to
135.0000 MHz
80.0001 MHz to 135.0000 MHz
Power source
Max. supply voltage VDD-GND
VDD
voltage
Operating voltage
TSTG
Temperature
Storage temperature
TOPR
range
Operating temperature
TSOL
Soldering condition (lead part)
Frequency stability
SG-710PHW/SHW
Specifications
-20 °C to +70 °C
-40 °C to +85 °C
No load condition
OE=GND(P*W)
ST=GND(S*W)
C-MOS load: 1/2VDD
TTL load: 1.4 V
IOH= -16 mA (*TW/HW)/-8 mA(*CW)
IOL= -16 mA (*TW/HW)/8 mA(*CW)
OE,ST
OE,ST
C-MOS load: 20 %→80 % VDD
TTL load: 0.4 V→2.4 V
C-MOS load: 80 %→20 % VDD
TTL load: 2.4 V→0.4 V
Time at 4.5 V to be 0 s
tOSC
10 ms Max.
fa
±5 x 10-6/year Max.
Ta=+25 °C, VDD =5 V
±20 x 10-6 Max.
Three drops on a hard board from 750 mm or
excitation test with 29400 m/s2 x 0.3 ms x 1/2
sine wave in 3 directions
S.R.
Operating condition and Frequency band
Operating condition
5 V±0.5 V
1 MHz
Frequency stability:B
( -20 to +70 °C)
1.8
Frequency stability:C
(-20 to +70 °C)
1.8
Frequency stability:M
( -40 to +85 °C)
1.8
Frequency stability:B
( -20 to +70 °C)
3.3 V±0.3 V Frequency stability:C
( -20 to +70 °C)
Frequency stability:M
( -40 to +85 °C)
50 MHz
80
50
80
50
80
SG-710PHK
SG-710PTK
26
67
26
67
26
SG-710ECK
135
SG-710PCW/SCW
SG-710ECK
1.8
135
SG-710PCW/SCW
SG-710ECK
1.8
135
SG-710PTW/STW/PHW/SHW
SG-710PHK
SG-710PTK
150 MHz
135
SG-710PTW/STW/PHW/SHW
SG-710PHK
SG-710PTK
1.8
100 MHz
50
67
135
SG-710PCW/SCW
38