376KB - Epson device

SlPHIGH−FREQUENCYCRYSTALOSCILLJrrOR
SG−11
.UseofC・MOSICa=owsJowcurrentconsumption.
●Smallsuitedtohigh−densitymounting.
●Mountableonastandardprintedboard.
.CylindricalAT−CutCryStalunitbuiltin,thusassunnghigh
reliabili吋.
■Specifications(Characteristics)
】
tem
O utputfrequencv ranqe
PDWerSOuICeVOh咽e
Tem 阿 atUre rangや
Sym b0l
SpeCifications
R em arlく
S
fo
1.
5 M Hz to 24 .
00 00 M H z
Fo routputfrequency,referto Ihe table below
Max.
S叩Plyvo他ge VDD−
GND
−
0.
3V to +7.
OV
Op8rat拍g volb ge
VDD
4.
5V to 5.
5V
Stora卵l即 peralure
TsTG
−
55°
c tO +1250C
Opera加いenlPerat購
TopR
−108c to +700C
S oldering condition (
lead part)
TsoL
Freque【CV Stabi,
itv
△f/
fo
U nder2600C w ithin lO sec.
D o not heatthc package to m ore than 1500C
C :土100ppm
−
10℃ to +70℃
C urrentco【
Sum Pt始〔
lop
10 m A m ax.
DuN
tw/
t
40% to 60%
1/
2 V DD Or 1.
4V level
VoH
V DD−
0.
4V m in.
loH二一
40 日
A
loL=1.
6m A
lT L l0ad /
C−
M O S l0ad
Outputvo】
tage
VoL
0.
4V m ax.
O utOUt load condjtio佃 an o 州
N/
CL
1TT L m ax.
/
15pF m ax.
0】
tPUt rise tim e
h LH
20 ns m a)
(
.
0 utputtalltim e
h HL
15 ns m ax.
Osc=atio【Stan uP tim e
tosc
10 m S m aX .
fa
土10 ppm m ax.(
3 ppm typ.
)
A gi【g
Shot火resistar】
Ce
N【
日0ad condition
Fo rm ore
Timthan
e at4
lm.
5V
s unt
to ibe
lV DD
O sec.
=0V→ 4.
5V T a=25DC 土3−
C .VDD=5V .fj「
Styear
Tn ree drops on a hard board from 75 cm or excitation
S.
R.
土10ppm m ax .
test w ith 3000G x O.
3 m s x l/
2 sine w ave x 3 d irections
Unlessotherwiscstated,Characteristics(SPeCifications)shownintheabovetablearebasedontheratedoperatingtempcratureandvoltagecondition.
■ExternaIdimensions (Unit:mm)q Outputfrequencyexample
Outputfrequency
3.579545 MHz
4.0000 MHz
E S G −
11 C
6.
14 10 M H z
607 1 B
4.9152 MHz
6.1440 MHz
8.0000 MHz
9.8304 MHz
12.0000 MHz
14.31818 MHz
16.0000 MHz
18.4320 MHz
19.6608 MHz
20.0000 MHz
24.0000 MHz
2g