Common Anode Silicon Dual Switching diodes M1MA151WAT1 M1MA152WAT1 These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59 package which is designed for low power surface mount applications. • Fast t rr , < 10 ns SC-59 PACKAGE COMMON ANODE DUAL SWITCHING DIODES • Low C D , < 15 pF • Available in 8 mm Tape and Reel 40/80 V-100mA SURFACE MOUNT Use M1MA151/2WAT1 to order the 7 inch/3000 unit reel. Use M1MA151/2WAT3 to order the 13 inch/10,000 unit reel. ANODE 3 3 2 1 CASE 318D–03, STYLE5 SC–59 2 1 CATHODE MAXIMUM RATINGS (T A = 25°C) Rating Reverse Voltage Peak Reverse Voltage Forward Current Peak Forward Current Peak Forward Surge Current M1MA151WAT1 M1MA152WAT1 M1MA151WAT1 M1MA152WAT1 Single Dual Single Dual Single Symbol VR Value 40 80 40 80 100 150 225 340 500 V RM IF I FM I FSM (1) Dual Unit Vdc Vdc mAdc mAdc mAdc 750 THERMAL CHARACTERISTICS Rating Power Dissipation Junction Temperature Storage Temperature Symbo PD TJ T stg lMax 200 150 -55 to +150 Unit mW °C °C ELECTRICAL CHARACTERISTICS (T A = 25°C) Characteristic Reverse Voltage Leakage Current M1MA151WAT1 M1MA152WAT1 Forward Voltage Reverse Breakdown Voltage M1MA151WAT1 M1MA152WAT1 Diode Capacitance Reverse Recovery Time Symbol IR VF VR CD t rr (2) Condition V R = 35 V V R = 75 V I F = 100 mA I R = 100 µA Min — — — 40 80 V R = 0, f = 1.0 MHz — I F = 10 mA, V R = 6.0 V, — R L = 100Ω, I rr = 0.1 I R Max 0.1 0.1 1.2 — — 15 10 Unit µAdc Vdc Vdc pF ns 1. t = 1 SEC 2. t rr Test Circuit H3–1/2 M1MA151WAT1 M1MA152WAT1 OUTPUT PULSE INPUT PULSE RECOVERY TIME EQUIVALENT TEST CIRCUIT t t r p t t I rr F t 10% R L 90% V R t p = 2 µs t r = 0.35 ns I rr = 0.1 I R I F = 10 mA V R= 6 V R L = 100 Ω DEVICE MARKING—EXAMPLE Marking Symbol Type No. Symbol 151WA 152WA MN MO MN X The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. H3–2/2