ETL M1MA152WAT1

Common Anode Silicon
Dual Switching diodes
M1MA151WAT1
M1MA152WAT1
These Common Anode Silicon Epitaxial Planar Dual Diodes are
designed for use in ultra high speed switching applications. These
devices are housed in the SC-59 package which is designed for low
power surface mount applications.
• Fast t rr , < 10 ns
SC-59 PACKAGE
COMMON ANODE
DUAL SWITCHING DIODES
• Low C D , < 15 pF
• Available in 8 mm Tape and Reel
40/80 V-100mA
SURFACE MOUNT
Use M1MA151/2WAT1 to order the 7 inch/3000 unit reel.
Use M1MA151/2WAT3 to order the 13 inch/10,000 unit reel.
ANODE
3
3
2
1
CASE
318D–03, STYLE5
SC–59
2
1
CATHODE
MAXIMUM RATINGS (T A = 25°C)
Rating
Reverse Voltage
Peak Reverse Voltage
Forward Current
Peak Forward Current
Peak Forward Surge Current
M1MA151WAT1
M1MA152WAT1
M1MA151WAT1
M1MA152WAT1
Single
Dual
Single
Dual
Single
Symbol
VR
Value
40
80
40
80
100
150
225
340
500
V RM
IF
I FM
I FSM (1)
Dual
Unit
Vdc
Vdc
mAdc
mAdc
mAdc
750
THERMAL CHARACTERISTICS
Rating
Power Dissipation
Junction Temperature
Storage Temperature
Symbo
PD
TJ
T stg
lMax
200
150
-55 to +150
Unit
mW
°C
°C
ELECTRICAL CHARACTERISTICS (T A = 25°C)
Characteristic
Reverse Voltage Leakage Current M1MA151WAT1
M1MA152WAT1
Forward Voltage
Reverse Breakdown Voltage
M1MA151WAT1
M1MA152WAT1
Diode Capacitance
Reverse Recovery Time
Symbol
IR
VF
VR
CD
t rr (2)
Condition
V R = 35 V
V R = 75 V
I F = 100 mA
I R = 100 µA
Min
—
—
—
40
80
V R = 0, f = 1.0 MHz
—
I F = 10 mA, V R = 6.0 V, —
R L = 100Ω, I rr = 0.1 I R
Max
0.1
0.1
1.2
—
—
15
10
Unit
µAdc
Vdc
Vdc
pF
ns
1. t = 1 SEC
2. t rr Test Circuit
H3–1/2
M1MA151WAT1 M1MA152WAT1
OUTPUT PULSE
INPUT PULSE
RECOVERY TIME EQUIVALENT TEST CIRCUIT
t
t
r
p
t
t
I
rr
F
t
10%
R
L
90%
V
R
t p = 2 µs
t r = 0.35 ns
I rr = 0.1 I
R
I F = 10 mA
V R= 6 V
R L = 100 Ω
DEVICE MARKING—EXAMPLE
Marking Symbol
Type No.
Symbol
151WA 152WA
MN
MO
MN X
The “X” represents a smaller alpha digit Date Code. The Date Code
indicates the actual month in which the part was manufactured.
H3–2/2