Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–89 package which is designed for low power surface mount applications, where board space is at a premium. LDAN222T1 3 • Fast trr • Low CD • Available in 8 mm Tape and Reel 1 2 SC-89 MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit VR 80 Vdc VRM 80 Vdc IF 100 mAdc IFM 300 mAdc IFSM(1) 2.0 Adc Symbol Max Unit Power Dissipation PD 150 mW Junction Temperature TJ 150 °C Tstg –55 to +150 °C Reverse Voltage Peak Reverse Voltage Forward Current Peak Forward Current Peak Forward Surge Current 1 ANODE 3 CATHODE 2 ANODE THERMAL CHARACTERISTICS Rating Storage Temperature Range 1. t = 1 µS ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Condition Min Max Unit Reverse Voltage Leakage Current IR VR = 70 V — 0.1 µAdc Forward Voltage VF IF = 100 mA — 1.2 Vdc Reverse Breakdown Voltage VR IR = 100 µA 80 — Vdc Diode Capacitance CD VR = 6.0 V, f = 1.0 MHz — 3.5 pF trr(2) IF = 5.0 mA, VR = 6.0 V, RL = 100 Ω, Irr = 0.1 IR — 4.0 ns Reverse Recovery Time 2. trr Test Circuit on following page. Driver Marking LDAN222T1=N9 LDAN222T1-1/3 LDAN222T1 Electrical characteristic curves Figure 1. Forward Voltage Figure 2. Reverse Current Figure 3. Diode Capacitance RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE OUTPUT PULSE LDAN222T1-2/3 LDAN222T1 SC-89 NOTES: 1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.CONTROLLING DIMENSION: MILLIMETERS 3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4.463C-01 OBSOLETE, NEW STANDARD 463C-02. LDAN222T1-3/3