EUDYNA FMM5057X

FMM5057X
C-Band Power Amplifier MMIC
FEATURES
•High Output Power; P1dB = 34 dBm (Typ.)
•High Linear Gain; GL = 27 dB(Typ.)
•Frequency Band ; 7.1 - 8.5 GHz
•High Linearity ; OIP3 = 42.5 dBm(typ.)
•Impedance Matched Zin/Zout = 50Ω
DESCRIPTION
The FMM5057X is a power amplifier MMIC that contains a four
stage amplifier, internally matched, for standard communications
band in 7.1 to 8.5GHz frequency range. This product is well
suited for point-to-point radio applications.
Eudyna’s stringent Quality Assurance Program assures the
highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING
Item
Drain-Source Voltage
Gate-Source Voltage
Input Power
Strage Temperature
Symbol
VDD
VGG
Pin
Tstg
Rating
12
-3
14
-55 to +125
Unit
V
V
dBm
℃
Condition
≦10
12
≦1200
-40 to +85
Unit
V
dBm
mA
℃
RECOMMENDED OPERATING CONDITIONS
Item
Symbol
Drain-Source Voltage
VDD
Input Power
Pin
Drain Current without RF
IDD(DC)
Operating Backside Temperature
Top
This Product should be hermetically packaged.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25℃
℃)
Item
Symbol
Test Conditions
Frequency Range
f
VDD=10.0V
Output Power at 1dB G.C.P.
P1dB
IDD(DC)=1200mA typ.
Power Gain at 1dB G.C.P.
G1dB
Zs=Zl=50ohm
Gain Flatness
ΔG
Input Return Loss
RLin
Output Return Loss
RLout
Note : RF parameter sample size 10ps. Criteria (accept/reject)=(0/1)
Class 0
ESD
Limits
Unit
Min. Typ. Max.
7.1
8.5
GHz
32.0
34.0
dBm
23
26
dB
+/- 1.2 +/-2.0
dB
7.0
10
dB
10
dB
G.C.P. : Gain Compression Point
~ 199V
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
Edition 1.1
January 2006
1
http://www.eudyna.com/
FMM5057X
C-Band Power Amplifier MMIC
Output Power vs. Frequency
Output Power, Drain Current vs. Input Power
VDD=10V, IDD(DC)=1200mA
VDD=10V, IDD(DC)=1200mA
30
Pin=8dBm
Pin=4dBm
28
26
Pin=0dBm
34
1300
26
1200
24
20
7.5
7.9
8.3
8.7
Power Added Efficiency vs. Frequency
VDD=10V, IDD(DC)=1200mA
32
28
Pin=12dBm
P1dB
20
Pin=8dBm
16
12
8
Pin=4dBm
4
Pin=0dBm
0
6.3
6.7
7.1
7.5
7.9
8.3
1000
900
-2
0
2
4
6
8
10
Input Power [dBm]
Frequency [GHz]
24
1100
Drain Current
-4
9.1
1400
Pout
28
22
7.1
1500
30
22
6.7
1600
32
24
6.3
1700
8.7
9.1
Frequency [GHz]
2
12
14
16
Drain Current [mA]
P1dB
Output Power [dBm]
Output Power [dBm]
34
32
7.1GHz
7.7GHz
8.5GHz
36
Pin=12dBm
36
Power Added Efficiency [%]
1800
38
38
FMM5057X
C-Band Power Amplifier MMIC
IMD vs. Frequency
IMD vs. Output Power
VDD=10V, IDD(DC)=1200mA, Pout=20dBm S.C.L.
VDD=10V, IDD(DC)=1200mA
-20
-35
Intermodulation Distortion [dBc]
Intermodulation Distortion [dBc]
-30
-40
IM3
-45
-50
-55
-60
6.3
6.7
7.1
7.5
7.9
8.3
8.7
7.1GHz
7.8GHz
8.5GHz
-25
-30
-35
-40
IM3
-45
-50
-55
-60
9.1
16
Frequency [GHz]
3
18
20
22
24
26
28
2-tone Total Output Power [dBm]
30
32
FMM5057X
C-Band Power Amplifier MMIC
Output Power, Drain Current vs.
Input Power by Drain Voltage
Output Power, Drain Current vs.
Input Power by Drain Voltage
IDD(DC)=1200mA, f=7.7GHz
IDD(DC)=1200mA, f=7.1GHz
Pout
1400
32
1300
28
1200
26
1100
24
1000
Drain Current
22
900
20
-2
0
2
4
6
8
10
12
14
1400
Pout
30
1300
28
1200
26
1100
24
900
20
16
800
-4
-2
0
2
4
Input Pow er [dBm]
1500
1400
1300
28
1200
26
1100
24
1000
Drain Current
20
2
4
6
8
16
10
12
14
36
34
32
32
P1dB [dBm]
Pout
0
14
7.1GHz
7.7GHz
8.5GHz
34
Drain Current [mA]
Output Power [dBm]
32
-2
12
36
1600
6V
8V
10V
-4
10
IDD(DC)=1200mA
36
22
8
Output Power, Gain vs. Drain Voltage
IDD(DC)=1200mA, f=8.5GHz
30
6
Input Pow er [dBm ]
Output Power, Drain Current vs.
Input Power by Drain Voltage
34
1000
Drain Current
22
800
-4
1500
P1dB
30
28
28
26
900
24
800
22
16
26
G1dB
24
22
5
Input Pow er [dBm ]
30
6
7
8
9
Drain Voltage [V]
4
10
11
G1dB [dB]
30
34
1600
6V
8V
10V
Drain Current [mA]
32
1500
Output Power [dBm]
34
Output Power [dBm]
36
1600
6V
8V
10V
Drain Current [mA]
36
FMM5057X
C-Band Power Amplifier MMIC
Output Power, Drain Current
vs. Input Power by Drain Current
Output Power, Drain Current
vs. Input Power by Drain Current
VDD=10V, f=7.7GHz
VDD=10V, f=7.1GHz
34
1900
32
Pout
30
1700
28
1500
26
1300
24
1100
22
900
2300
800m A
1200m A
1600m A
2100
1900
Pout
30
1700
28
1500
26
1300
24
1100
22
900
Drain Current
Drain Current
20
700
-2
0
2
4
6
8
10
12
14
20
16
700
-4
-2
0
2
Input Pow er [dBm ]
2100
1700
28
1500
26
1300
24
1100
P1dB [dBm]
30
900
Drain Current
20
2
4
6
8
16
10
12
14
36
34
P1dB
16
Input Pow er [dBm ]
30
28
28
G1dB
26
26
24
24
600
800
1000
1200
1400
Drain Current [mA]
5
32
30
22
400
700
0
14
7.1GHz
7.7GHz
8.5GHz
32
Drain Current [mA]
Output Power [dBm]
34
1900
Pout
-2
12
36
2300
800m A
1200m A
1600m A
-4
10
VDD=10V
36
22
8
Output Power, Gain vs. Drain Current
VDD=10V, f=8.5GHz
32
6
Input Pow er [dBm ]
Output Power, Drain Current
vs. Input Power by Drain Current
34
4
1600
22
1800
G1dB [dB]
-4
Drain Current [mA]
32
2100
Output Power [dBm]
34
Output Power [dBm]
36
2300
800m A
1200m A
1600m A
Drain Current [mA]
36
FMM5057X
C-Band Power Amplifier MMIC
IMD vs. Output Power
by Drain Voltage
IMD vs. Output Power
by Drain Voltage
IDD(DC)=1200mA, f=7.1GHz
IDD(DC)=1200mA, f=7.7GHz
-10
6V
8V
10V
-15
-20
Intermodulation Distortion [dBc]
Intermodulation Distortion [dBc]
-10
-25
-30
IM3
-35
-40
-45
-50
-55
-60
16
18
20
22
24
26
28
30
Intermodulation Distortion [dBc]
-10
6V
8V
10V
-25
IM3
-35
-40
-45
-50
-55
-60
16
18
20
22
24
26
28
-30
IM3
-35
-40
-45
-50
-55
18
20
22
24
26
28
2-tone Total Pout [dBm]
IDD(DC)=1200mA, f=8.5GHz
-30
-25
16
IMD vs. Output Power
by Drain Voltage
-20
-20
-60
32
2-tone Total Pout [dBm]
-15
6V
8V
10V
-15
30
32
2-tone Total Pout [dBm]
6
30
32
FMM5057X
C-Band Power Amplifier MMIC
IMD vs. Output Power
by Drain Current
IMD vs. Output Power
by Drain Current
VDD=10V, f=7.1GHz
VDD=10V, f=7.7GHz
-10
800mA
1200mA
1600mA
-15
-20
Intermodulation Distortion [dBc]
Intermodulation Distortion [dBc]
-10
-25
-30
-35
IM3
-40
-45
-50
-55
-60
-20
-25
-30
-35
IM3
-40
-45
-50
-55
-60
16
18
20
22
24
26
28
30
32
16
2-tone Total Pout [dBm]
VDD=10V, f=8.5GHz
-10
800mA
1200mA
1600mA
-15
-20
-25
-30
-35
IM3
-40
-45
-50
-55
-60
16
18
20
22
24
26
28
18
20
22
24
26
28
2-tone Total Pout [dBm]
IMD vs. Output Power
by Drain Current
Intermodulation Distortion [dBc]
800mA
1200mA
1600mA
-15
30
32
2-tone Total Pout [dBm]
7
30
32
FMM5057X
C-Band Power Amplifier MMIC
■S-PARAMETER
Sxx [dB]
@VDD=10V, IDD=1200mA
30
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
S11
S22
S21
0
2
4
6
8
10
12
14
16
18
20
Frequency [GHz]
Sxx [dB]
@VDD=10V, IDD=1200mA
40
35
30
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
6
S11
S22
6.5
7
S21
7.5
8
Frequency [GHz]
8
8.5
9
9.5
FMM5057X
C-Band Power Amplifier MMIC
■S-PARAMETER
@VDD=10V, IDD=1200mA
Freq. S11 Mag. S11 Ang. S21 Mag. S21 Ang. S12 Mag. S12 Ang. S22 Mag. S22 Ang.
1.0
0.96
-48.7
0.09
68.8
0.00
28.3
0.97
-93.8
2.0
0.89
-90.7
0.01
103.2
0.00
60.4
0.93
-144.5
3.0
0.81
-125.8
0.00
-5.5
0.00
-131.6
0.93
-169.9
4.0
0.72
-159.6
0.39
86.7
0.00
-13.7
0.94
161.7
5.0
0.52
171.1
10.59
139.2
0.00
147.8
0.88
128.6
6.0
0.28
143.0
19.53
-98.2
0.00
28.6
0.56
69.6
6.5
0.14
147.0
23.03
150.4
0.00
-146.7
0.18
11.8
6.6
0.13
151.8
23.37
128.2
0.00
116.4
0.12
-12.6
6.7
0.11
159.9
23.50
106.3
0.00
97.7
0.08
-56.3
6.8
0.10
171.2
23.52
84.6
0.00
16.9
0.09
-108.2
6.9
0.10
-177.2
23.42
63.1
0.00
-132.3
0.12
-137.4
7.0
0.11
-167.9
23.21
42.0
0.00
-110.9
0.15
-153.7
7.1
0.12
-160.1
22.96
21.1
0.00
177.5
0.18
-164.8
7.2
0.13
-155.2
22.67
0.6
0.00
32.5
0.20
-173.3
7.3
0.15
-152.8
22.39
-19.8
0.00
-113.4
0.22
-179.1
7.4
0.17
-152.6
22.14
-40.1
0.00
136.3
0.23
175.6
7.5
0.18
-153.2
21.89
-60.1
0.00
-27.5
0.23
171.7
7.6
0.20
-155.2
21.72
-80.1
0.00
-159.1
0.23
169.1
7.7
0.21
-157.7
21.57
-100.1
0.00
-139.9
0.23
167.4
7.8
0.22
-161.4
21.57
-120.1
0.00
129.3
0.23
165.7
7.9
0.23
-166.3
21.66
-140.3
0.00
86.7
0.23
164.6
8.0
0.23
-172.1
21.82
-160.8
0.00
-122.6
0.23
163.9
8.1
0.24
-178.1
22.14
178.3
0.00
68.0
0.22
162.6
8.2
0.24
174.6
22.56
156.8
0.00
-9.7
0.22
160.8
8.3
0.23
166.0
23.14
134.5
0.00
70.0
0.21
159.1
8.4
0.23
155.5
23.78
111.2
0.00
103.6
0.20
157.3
8.5
0.22
142.2
24.41
86.4
0.00
61.9
0.18
155.4
8.6
0.21
126.4
24.94
60.0
0.00
-112.2
0.16
154.4
8.7
0.20
105.6
25.02
31.7
0.00
-156.2
0.12
158.3
8.8
0.21
81.3
24.33
1.5
0.00
76.2
0.08
178.1
8.9
0.23
56.2
22.63
-30.0
0.00
-132.5
0.09
-142.2
9.0
0.27
31.7
19.90
-61.9
0.00
130.0
0.15
-125.3
10.0
0.76
-89.7
1.35
58.6
0.00
-146.5
0.54
-160.3
11.0
0.88
-131.4
0.09
-86.9
0.00
151.1
0.71
176.7
12.0
0.92
-154.6
0.01
159.7
0.00
-171.4
0.81
157.1
13.0
0.94
-171.2
0.00
108.8
0.00
76.6
0.87
139.4
14.0
0.95
175.3
0.00
153.7
0.00
42.9
0.90
122.8
15.0
0.96
163.5
0.00
79.2
0.00
156.2
0.92
105.8
16.0
0.97
152.8
0.00
-5.1
0.00
85.6
0.92
87.6
17.0
0.98
142.7
0.00
2.9
0.00
-61.6
0.90
67.2
18.0
0.99
132.9
0.00
26.7
0.00
-34.0
0.87
43.1
19.0
0.99
123.6
0.00
14.3
0.00
-133.3
0.82
14.0
20.0
1.00
114.0
0.00
42.1
0.00
148.1
0.75
-22.7
9
FMM5057X
C-Band Power Amplifier MMIC
ΔTch vs. Drain Voltage
(Reference)
IDD(DC)=1200mA
80
70
Δ Tch [℃
℃]
60
50
40
30
20
10
0
5
6
7
8
9
10
11
VDD [V]
MTTF vs. Tch
270 250
Tch (℃)
145 125
1.0E+12
1.0E+11
1.0E+10
MTTF (hours)
1.0E+09
1.0E+08
1.0E+07
1.0E+06
1.0E+05
1.0E+04
1.0E+03
1.6
1.8
2
2.2
2.4
1000/Tch (1/K)
10
2.6
2.8
3
FMM5057X
C-Band Power Amplifier MMIC
■ Chip Outline and Bonding Pad Locations (Dimension in Micro-Meters)
VGG
0
737
1204
VDD3
VDD5
2000
3545
4130
3230
3105
3075
3230
3105
3075
1618 RF-OUT
RF-IN 1618
128
0
128
0
0
737
1204
VDD1 VDD2
2000
3545
VDD4
VDD6
4130
Chip Size : 4130±
±30um x 3230±
±30um
Chip Thickness : 70±
±20um
Bonding Pad Size :
RF-Pad : 120um x 240um
VDD Pad : 240um x 120um
VGG Pad : 120um x 120um
11
FMM5057X
C-Band Power Amplifier MMIC
■ Recommended Assembly Diagrams
VGG
VDD3
0.15uF
0.15uF
220pF
220pF
220pF
220pF
220pF
220pF
220pF
0.15uF
0.15uF
VDD1
VDD2
Note :
* High isolation between VDD1 and VDD2 is needed.
* “Copper” is the recommended material for the package or carrier.
12
FMM5057X
C-Band Power Amplifier MMIC
■DIE ATTACH
1) The die-attach station must have accurate temperature control and an inert forming gas should
be used.
2) Chips should be kept at room temperature except during die-attach.
3) Place package or carrier on the heated stage.
4) Lightly grasp the chip edges by the longer side using tweezers.
Die attach conditions
Stage Temperature : 300 to 310 deg.C
Time : less than 15 seconds
AuSn Preform Volume : per next Figure
Volume of Au-Sn Perform (10 -3/mm 3)
2500
FMM5057X
2000
1500
1000
500
0
0
2
4
6
8
10
12
14
16
18
20
Area of Chip Bach Surface (mm^2)
■ WIRE BONDING
The bonding equipment must be properly grounded. The following or equivalent equipment, tools,
materials, and conditions are recommended.
1) Bonding Equipment and Bonding Tool.
Bonding Equipment : West Bond Model 7400 (Manual Bonder)
Bonding Tool : CCOD-1/16-S-437-60-F-2010-MP (Deweyl)
2) Bonding Wire
Material : Hard or Half hard gold
Diameter : 0.7 to 1.0 mil
3) Bonding Conditions
Method : Thermal Compression Bonding with Ultrasonic Power
Tool Force : 0.196 N ± 0.0196 N
Stage Temperature : 215 deg.C ± 5 deg.C
Tool Heater : None
Ultrasonic Power Transmitter : West Bond Model 1400
Duration : 150 mS/Bond
13
FMM5057X
C-Band Power Amplifier MMIC
For further information please contact :
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: +1 408 232-9500
FAX: +1 408 428-9111
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
CAUTION
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
・Do not put these products into the mouth.
・Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or
swallowed.
・Observe government laws and company regulations when
discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste
procedures.
Eudyna Devices International Srl
Via Teglio 8/2 - 20158
Milano, Italy
TEL: +39-02-8738-1695
Eudyna Devices Inc. reserves the right to change products and
specifications without notice.The information does not convey any
license under rights of Eudyna Devices Inc. or others.
© 2006 Eudyna Devices Inc.
Eudyna Devices Asia Pte. Ltd.
Hong Kong Branch
Suite 1906B, Tower 6, China Hong Kong City
33 Canton Road, Tsimshatsui, Kowloon
Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc.
1000 Kamisukiahara, showa-cho
Nakakomagun, Yamanashi
409-3883, Japan
(Kokubo Industrial Park)
TEL +81-55-275-4411
FAX +81-55-275-9461
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL +81-45-853-8156
FAX +81-45-853-8170
14