FMM5063X Ku-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 32.0 dBm (Typ.) •High Linear Gain; GL = 30 dB(Typ) •Wide Frequency Band : 12.75 - 15.4 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5063X is a power amplifier MMIC that contains a three stage amplifier, internally matched, for standard communications band in 12.75 to 15.4GHz frequency range. This product is well suited for point-to-point radio and V-SAT. Device photo Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXMUM RATING (Ambient Temperature Ta=25 ℃) Item Stmbol Condition Drain-Source Voltage VDD Gate-Source Voltage VGG Input Power Pin Strage Temperature Tstg RECOMMENDED OPERATING CONDITION Item Symbol Drain-Source Voltage VDD Input Power Pin Operating Backside Temperature Top This product should be hermetically packaged. Condition Rating 10 -3 24 -55 to +125 Unit V V dBm ℃ Recommended ≤8 ≤9 -40 to +85 Unit V dBm ℃ ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25 ℃ ) Item Symbol Test Conditions Frequency Range f VDD=6.0V Output Power at 1dB G.C.P. P1dB IDD(DC)=900mA typ. Power Gain at 1dB G.C.P. G1dB Zs=Zl=50ohm Power Added Efficiency at 1dB G.C.P. Nadd *df=10MHz,Po=20dBm Third Order Intermodulation IM3* (S.C.L.) Drain Current at 1dB G.C.P. Iddrf Input Return Loss at Pin=-20dBm RLin Output Return Loss at Pin=-20dBm RLout Note : RF parameter sample size 10ps. Criteria (accept/reject)=(0/1) ESD Class 0 Limits Unit Min. Typ. Max. 12.75 15.4 GHz 30.0 32.0 dBm 25 29 dB 22 % -32 -37 dBc 1000 1500 mA -8 dB -12 dB G.C.P. : Gain Compression Point S.C.L. : Single Carrier Level ~ 199V Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kW) Edition 1.1 January 2006 1 http://www.eudyna.com/ FMM5063X Ku-Band Power Amplifier MMIC Output Power vs. Frequency Output Power, Drain Current vs. Input Power VDD=6V, IDD(DC)=900mA VDD=6V, IDD(DC)=900mA 34 1500 Pin=+4dBm 32 P1dB 30 Output Power [dBm] Output Power [dBm] 32 12.75GHz 14.0GHz 15.4GHz Pin=-0dBm 28 Pin=-4dBm 26 24 Pin=-8dBm 1400 30 1300 28 1200 26 1100 24 1000 22 900 20 800 18 700 22 20 12 12.5 13 13.5 14 14.5 15 15.5 16 16.5 Frequency [GHz] VDD=6V, IDD(DC)=900mA Power Added Efficiency [%] 35 30 Pin=+4dBm 25 P1dB Pin=-0dBm 15 10 Pin=-4dBm 5 Pin=-8dBm 0 12 12.5 13 13.5 14 14.5 15 -8 -6 -4 -2 0 2 Input Power [dBm] Power Added Efficiency vs. Frequency 20 -12 -10 15.5 16 16.5 Frequency [GHz] 2 4 6 8 Drain Current [mA] 34 FMM5063X Ku-Band Power Amplifier MMIC IMD vs. Frequency IMD vs. Output Power VDD=6V, IDD(DC)=900mA, Pout=20dBm S.C.L. VDD=6V, IDD(DC)=900mA -10 Intermodulation Distortion [dBc] Intermodulation Distortion [dBc] -30 -35 IM3 -40 -45 -50 IM5 -55 -60 12.75GHz 14.0GHz 15.4GHz -15 -20 -25 -30 -35 IM3 -40 -45 IM5 -50 -55 -60 12 12.5 13 13.5 14 14.5 15 15.5 16 16.5 Frequency [GHz] 17 19 21 23 25 27 29 2-tone Total Output Power [dBm] 3 31 33 FMM5063X Ku-Band Power Amplifier MMIC Output Power, Drain Current vs. Input Power by Drain Voltage Output Power, Drain Current vs. Input Power by Drain Voltage IDD(DC)=900mA, f=12.75GHz IDD(DC)=900mA, f=14.0GHz 34 1900 32 1700 28 1500 26 1300 24 1100 900 22 900 700 20 700 500 18 1700 28 1500 26 1300 24 1100 22 20 -12 -10 -8 -6 -4 -2 0 2 4 6 8 500 -12 -10 -8 Input Power [dBm] -6 -4 -2 0 2 4 6 8 Input Power [dBm] Output Power, Drain Current vs. Input Power by Drain Voltage Output Power, Gain vs. Drain Voltage IDD(DC)=900mA, f=15.4GHz IDD(DC)=900mA, f=15.4GHz 36 36 2300 4V 5V 6V 7V 8V 12.75GHz 14.0GHz 15.4GHz 34 1900 30 1700 P1dB [dBm] 32 38 35 2100 Drain Current [mA] 34 Output Power [dBm] 1900 30 30 18 2100 37 36 33 35 32 34 31 33 30 32 29 31 28 30 28 1500 26 1300 24 1100 22 900 27 29 20 700 26 28 18 25 500 -12 -10 -8 -6 -4 -2 0 2 Drain Current [mA] 2100 2300 4V 5V 6V 7V 8V 4 6 27 3 8 4 5 6 7 Drain Voltage [V] Input Power [dBm] 4 8 9 G1dB [dB] Output Power [dBm] 32 36 Output Power [dBm] 4V 5V 6V 7V 8V 34 2300 Drain Current [mA] 36 FMM5063X Ku-Band Power Amplifier MMIC Output Power, Drain Current vs. INPUT POWER by Drain Current Output Power, Drain Current vs. INPUT POWER by Drain Current VDD=6V, f=12.75GHz VDD=6V, f=14.0GHz 1900 32 30 1700 30 1700 28 1500 28 1500 26 1300 26 1300 24 1100 24 1100 22 900 22 900 20 700 20 700 500 18 18 -12 -10 -8 -6 -4 -2 0 2 4 6 -4 -2 0 2 4 6 Output Power, Gain vs. Drain Current VDD=6V, f=15.4GHz VDD=6V 35 2100 700mA 900mA 1100mA 1500 26 1300 24 1100 22 900 20 700 18 500 -6 -4 -2 0 2 4 6 P1dB [dBm] 28 Drain Current [mA] 1700 36 12.75GHz 14.0GHz 15.4GHz 34 1900 30 -12 -10 -8 Drain Current [mA] 8 Output Power, Drain Current vs. INPUT POWER by Drain Current 34 Output Power [dBm] -6 Input Power [dBm] Input Power [dBm] 32 1900 500 -12 -10 -8 8 2100 700mA 900mA 1100mA 35 33 34 32 33 31 32 30 31 29 30 28 29 27 28 26 27 25 8 26 600 Input Power [dBm] 5 700 800 900 1000 Drain Current [mA] 1100 1200 G1dB [dB] Output Power [dBm] 32 Output Power [dBm] 34 700mA 900mA 1100mA Drain Current [mA] 2100 34 FMM5063X Ku-Band Power Amplifier MMIC IMD vs. OUTPUT POWER by Drain Voltage IMD vs. OUTPUT POWER by Drain Voltage IDD(DC)=900mA, f=12.75GHz IDD(DC)=900mA, f=14.0GHz -10 4V 5V 6V 7V 8V -15 -20 -25 Intermodulation Distortion [dBc] Intermodulation Distortion [dBc] -10 -30 -35 IM3 -40 -45 -50 IM5 -55 -60 -20 -25 -30 -35 IM3 -40 -45 -50 IM5 -55 -60 17 19 21 23 25 27 29 31 33 17 Input Power [dBm] IDD(DC)=900mA, f=15.4GHz -10 4V 5V 6V 7V 8V -15 -20 -25 -30 -35 IM3 -40 -45 -50 IM5 -55 -60 17 19 21 23 25 27 19 21 23 25 27 Input Power [dBm] IMD vs. OUTPUT POWER by Drain Voltage Intermodulation Distortion [dBc] 4V 5V 6V 7V 8V -15 29 31 33 Input Power [dBm] 6 29 31 33 FMM5063X Ku-Band Power Amplifier MMIC IMD vs. OUTPUT POWER by Drain Current IMD vs. OUTPUT POWER by Drain Current VDD=6V, f=12.75GHz VDD=6V, f=14.0GHz -10 700mA 900mA 1100mA -15 -20 Intermodulation Distortion [dBc] Intermodulation Distortion [dBc] -10 -25 -30 IM3 -35 -40 -45 IM5 -50 -55 -60 -20 -25 -30 IM3 -35 -40 -45 IM5 -50 -55 -60 17 19 21 23 25 27 29 31 33 17 2-tone Total Output Power [dBm] VDD=6V, f=15.4GHz -10 700mA 900mA 1100mA -15 -20 -25 -30 IM3 -35 -40 -45 IM5 -50 -55 -60 17 19 21 23 25 27 29 19 21 23 25 27 29 2-tone Total Output Power [dBm] IMD vs. OUTPUT POWER by Drain Current Intermodulation Distortion [dBc] 700mA 900mA 1100mA -15 31 33 2-tone Total Output Power [dBm] 7 31 33 FMM5063X Ku-Band Power Amplifier MMIC ■S-PARAMETER +90° +50j +25j +100j 10Ω 25 14GHz 0 +250j 16GHz 12GHz 14Hz ±180° 40 ∞ 14GHz 12GHz -10j -250j 16GHz -25j -100j -50j 12GHz 20 Scale for |S21| Scale for |S 12| +10j 0.1 -90° S11 S22 8 0° 16Hz S12 S21 FMM5063X Ku-Band Power Amplifier MMIC ■S-PARAMETER VDD=6V, IDD=900mA Frequency [GHz] 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 12.2 12.4 12.6 12.8 13.0 13.2 13.4 13.6 13.8 14.0 14.2 14.4 14.6 14.8 15.0 15.2 15.4 15.6 15.8 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 27.0 28.0 29.0 30.0 31.0 32.0 33.0 34.0 35.0 36.0 37.0 38.0 39.0 40.0 S11 MAG 0.58 0.57 0.59 0.62 0.66 0.69 0.73 0.75 0.76 0.78 0.80 0.80 0.80 0.79 0.79 0.78 0.76 0.74 0.72 0.68 0.64 0.59 0.53 0.46 0.38 0.30 0.23 0.21 0.24 0.31 0.37 0.43 0.55 0.65 0.74 0.79 0.84 0.86 0.87 0.88 0.88 0.89 0.90 0.90 0.91 0.92 0.92 0.92 0.92 0.91 0.90 0.87 0.85 0.79 0.74 0.67 ANG -29.2 -42.7 -57.2 -70.5 -82.8 -94.0 -105.0 -115.4 -123.8 -132.7 -143.0 -155.5 -158.6 -162.0 -165.8 -170.0 -174.6 -179.7 174.6 168.4 161.2 152.9 143.3 131.7 117.3 97.7 69.1 30.6 -6.8 -33.5 -52.3 -66.5 -97.6 -107.2 -116.4 -123.6 -130.0 -136.1 -140.9 -144.6 -148.2 -150.9 -154.0 -156.6 -159.7 -161.9 -164.8 -167.9 -170.8 -174.1 -177.1 179.5 175.7 172.2 170.8 168.9 S21 ANG MAG 0.01 132.2 0.07 -14.0 0.08 -163.4 0.05 169.5 0.10 -157.9 0.57 137.7 1.59 65.8 3.64 -29.5 5.00 -119.1 6.54 164.2 9.79 91.3 16.72 6.4 18.43 -13.0 20.09 -33.1 21.57 -53.6 22.85 -74.3 23.90 -94.9 24.82 -115.5 25.64 -135.8 26.41 -156.0 27.17 -176.3 28.00 163.3 28.82 142.7 29.71 121.5 30.51 99.9 31.16 77.6 31.60 54.7 31.80 31.2 31.64 7.2 31.10 -17.5 30.12 -43.0 28.53 -69.0 14.50 164.0 5.42 61.8 2.25 -25.6 1.07 -127.3 0.20 117.7 0.03 56.9 0.00 94.4 0.00 80.0 0.00 69.8 0.00 62.1 0.00 17.8 0.00 3.2 0.00 31.5 0.00 131.7 0.00 8.4 0.00 145.0 0.00 49.5 0.00 39.1 0.00 16.1 0.00 -25.3 0.00 -12.7 0.00 -142.6 0.00 -43.0 0.00 -96.1 9 S12 MAG ANG 0.00 -148.2 0.00 -95.8 0.00 -152.7 0.00 36.6 0.00 -99.4 0.00 145.6 0.00 128.2 0.00 10.3 0.00 -67.9 0.00 -104.4 0.00 -175.6 0.00 137.7 0.00 103.1 0.00 127.8 0.00 92.8 0.00 88.2 0.00 108.5 0.00 56.1 0.00 27.2 0.00 49.2 0.00 15.6 0.00 3.1 0.00 -17.6 0.00 -52.1 0.00 -34.7 0.00 -115.4 0.00 -136.6 0.00 145.0 0.00 166.5 0.00 153.5 0.00 123.9 0.00 104.3 0.00 -19.5 0.00 -98.3 0.00 152.2 0.00 165.1 0.00 -176.2 0.00 91.7 0.00 98.7 0.00 65.9 0.00 66.2 0.00 27.9 0.00 41.2 0.00 -16.8 0.00 -14.0 0.00 27.1 0.00 147.7 0.00 15.4 0.00 14.4 0.00 -25.8 0.00 118.9 0.00 -53.4 0.00 -61.3 0.00 -56.1 0.01 -99.2 0.00 -9.9 S22 MAG ANG 1.00 -30.2 0.97 -60.9 0.96 -88.1 0.96 -119.3 0.92 -153.1 0.83 170.2 0.71 123.2 0.49 49.6 0.43 -67.8 0.53 -158.1 0.51 134.5 0.34 49.2 0.30 26.6 0.28 0.7 0.26 -26.6 0.25 -51.8 0.25 -74.3 0.26 -94.7 0.26 -110.7 0.27 -123.0 0.27 -133.8 0.28 -141.7 0.29 -147.8 0.30 -155.0 0.31 -162.1 0.33 -168.4 0.35 -177.7 0.36 172.0 0.38 161.4 0.38 147.0 0.37 130.0 0.34 111.6 0.29 -34.6 0.51 -112.7 0.71 -150.9 0.82 -177.6 0.87 159.5 0.92 140.5 0.94 124.6 0.93 108.6 0.93 91.3 0.93 73.6 0.87 50.3 0.77 14.1 0.63 -44.3 0.60 -132.2 0.79 169.8 0.86 136.0 0.92 113.1 0.96 99.9 0.95 88.2 0.94 75.7 0.96 68.3 0.98 62.8 0.94 53.3 0.97 44.9 FMM5063X Ku-Band Power Amplifier MMIC ΔTch vs. Drain Voltage (Reference) IDD(DC)=900mA 80 70 Δ Tch [℃ ℃] 60 50 40 30 20 10 0 4 5 6 7 8 9 VDD [V] MTTF vs. Tch 1.E+12 1.E+11 Ea=1.56eV 1.E+10 MTTF (hrs) 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 1.E+04 1.E+03 1.E+02 1.E+01 50 100 150 Tch (deg-C) 10 200 250 FMM5063X Ku-Band Power Amplifier MMIC ■ Chip Outline and Bonding Pad Locations (Dimension in Micro-Meters) VGG1 0 120 335 VDD1 905 VDD3 1350 VDD5 2845 3315 3435 2770 2550 2770 2575 RF-IN 1385 1385 RF-OUT 150 0 125 0 0 120 335 (VGG2) 905 1350 VDD2 VDD4 2845 3315 3435 VDD6 Chip Size : 3435± ±30um x 2770± ±30um Chip Thickness : 60± ±20um Bonding Pad Size : 160um x 80um Ｎｏｔｅ : Gate voltage is required from either or both bonding pad( VGG1 or/and VGG2). 11 FMM5063X Ku-Band Power Amplifier MMIC ■ Assembly Diagrams Recommended assembly 1 uF VGG 100pF 100pF 100pF 100pF 50ohm Line 1 uF VDD 50ohm Line 100pF 100pF 100pF VDD 1 uF “Copper” is the recommended material for the package or carrier. 12 FMM5063X Ku-Band Power Amplifier MMIC ■DIE ATTACH 1) The die-attach station must have accurate temperature control, and an inert forming gas should be used. 2) Chips should be kept at room temperature except during die-attach. 3) Place package or carrier on the heated stage. 4) Lightly grasp the chip edges by the longer side using tweezers. Die attach conditions Stage Temperature : 300 to 310 deg.C Time : less than 15 seconds AuSn Preform Volume : per next Figure Volume of Au-Sn Perform (10 -3/mm 3) 2500 2000 FMM5063X 1500 1000 500 0 0 2 4 6 8 10 12 14 16 18 20 Area of Chip Bach Surface (mm^2) ■ WIRE BONDING The bonding equipment must be properly grounded. The following or equivalent equipment, tools, materials, and conditions are recommended. 1) Bonding Equipment and Bonding Tool. Bonding Equipment : West Bond Model 7400 (Manual Bonder) Bonding Tool : CCOD-1/16-S-437-60-F-2010-MP (Deweyl) 2) Bonding Wire Material : Hard or Half hard gold Diameter : 0.7 to 1.0 mil 3) Bonding Conditions Method : Thermal Compression Bonding with Ultrasonic Power Tool Force : 0.196 N ± 0.0196 N Stage Temperature : 215 deg.C ± 5 deg.C Tool Heater : None Ultrasonic Power Transmitter : West Bond Model 1400 Duration : 150 mS/Bond 13 FMM5063X Ku-Band Power Amplifier MMIC For further information please contact : Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: +1 408 232-9500 FAX: +1 408 428-9111 CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・Do not put these products into the mouth. Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 ・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. ・Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices International Srl Via Teglio 8/2 - 20158 Milano, Italy TEL: +39-02-8738-1695 Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2006 Eudyna Devices Inc. Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Suite 1906B, Tower 6, China Hong Kong City 33 Canton Road, Tsimshatsui, Kowloon Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL +81-55-275-4411 FAX +81-55-275-9461 Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL +81-45-853-8156 FAX +81-45-853-8170 14