ES/EMM5068VU Preliminary X-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.0dBm (typ.) ・High Linear Gain: GL=26.0dB (typ.) ・Broad Band: 9.5-13.3GHz ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION The EMM5068VU is a MMIC amplifier that contains a three-stages amplifier, internally matched, for standard communications band in the 9.5 to 13.3GHz frequency range. Eudyna Devices’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING Item Drain-Source Voltage Device の写真 Symbol VDD Rating 10 Unit V VGG -3 V Input Power Pin 26 dBm Channel Temperature Storage Temperature Tch Tstg +175 Gate-Source Voltage o o -55 to +125 C C RECOMMENDED OPERATING CONDITIONS Item Drain-Source Voltage Symbol VDD Conditions 6 Unit V Drain-Source Current IDD 1300 mA Input Power Pin Top <=12 -40 to +85 dBm Operating Case Temperature o C o ELECTRICAL CHARACTERISTICS (Case Temperature Ta=25 C) Item Frequency Range Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Symbol f P1dB G1dB Test Conditions VDD=6V IDD=1300mA 31*1 33*1 Zs=Zl=50ohm 28*2 *1:f=9.5~11.7GHz *2:f=11.7~13.3GHz Power-added Efficiency at 1dB G.C.P. Third Order Intermodulation* Drain Current at 1dB G.C.P. Input Return Loss (at Pin=-20dBm) Output Return Loss (at Pin=-20dBm) ESD ηadd IM3 *3:∆f=10MHz , IDD GHz dBm 30*2 22*1 25*1 - dB *2 23*2 21*1 - % -37*3 *2 - 20 - 13 -40*3 *1 mA mA - 1700 - 1500*2 2400*2 - -8 -8 2400 dBc *1 2-Tone Test, RLin RLout Unit - Pout=20dBm S.C.L. - dB dB G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level Class 0 ~ 199V Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ) CASE STYLE Edition 1.2 June 2005 Limits Typ. Max. 13.3 Min. 9.5 VU 1 Preliminary ES/EMM5068VU X-Band Power Amplifier MMIC OUTPUT POWER , DRAIN CURRENT vs. INPUT POWER OUTPUT POWER vs. FREQUENCY VDD=6V, IDD(DC)=1300mA VDD=6V, IDD(DC)=1300mA Output Power [dBm] Output Power[dBm] 32 Pin=+4dBm 30 28 26 Pin=0dBm 24 22 Pin=-4dBm 20 9 10 11 12 13 14 9.5GHz 11.7GHz 13.3GHz 34 Pin=+10dBm 34 8 2700 36 36 32 2500 2300 30 2100 28 1900 26 1700 24 1500 22 1300 20 1100 900 18 15 -8 Frequency[GHz] -4 0 4 8 Input Power [dBm] POWER ADDED EFFICIENCY vs FREQUENCY VDD=6V, IDD(DC)=1300mA Power Added Efficiency[%] 35 30 25 Pin=10dBm 20 P1dB 15 Pin=+4dBm 10 5 Pin=0dBm 0 Pin=-4dBm 8 9 10 11 12 13 14 15 Frequency[GHz] 2 12 16 Drain Current [mA] P1dB ES/EMM5068VU Preliminary X-Band Power Amplifier MMIC IMD vs. FREQUENCY IMD vs OUTPUT POWER VDD=6V, IDD(DC)=1300m A, Pout=20dBm S.C.L. VDD=6V, IDD(DC)=1300m A -20 Intermodulation Distortion [dBc] Intermodulation Distortion [dBc] -35 -40 IM3 -45 -50 -55 -60 IM5 -65 -70 -25 9.5GHz 11.7GHz 13.3GHz -30 -35 IM3 -40 -45 -50 -55 -60 IM5 -65 -70 8 9 10 11 12 13 14 15 Frequency [GHz] 17 19 21 23 25 27 29 2-Tone Total Output Pow er [dBm ] 3 31 Preliminary ES/EMM5068VU X-Band Power Amplifier MMIC OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by Drain Voltage OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by Drain Voltage IDD(DC)=1300mA @11.7GHz IDD(DC)=1300mA @9.5GHz 2300 32 2100 28 1900 26 1700 24 1500 22 1300 1100 20 1100 900 18 2100 28 1900 26 1700 24 1500 22 1300 20 -8 -4 0 4 8 12 16 900 -8 Input Power [dBm] -4 0 12 16 IDD(DC)=1300mA 36 38 38 2700 4V 5V 6V 2500 36 2300 34 Drain Current [mA] 9.5GHz 11.7GHz 13.3GHz 36 34 32 32 30 30 28 28 26 26 1300 24 24 20 1100 22 22 18 900 20 20 30 2100 28 1900 26 1700 24 1500 22 -8 -4 0 4 8 12 P1dB [dBm] Output Power [dBm] 8 OUTPUT POWER, GAIN vs. DRAIN VOLTAGE IDD(DC)=1300mA @13.3GHz 32 4 Input Power [dBm] OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by Drain Voltage 34 2300 30 30 18 2500 Drain Current [mA] 34 4V 5V 6V 3 16 Input Power [dBm] 4 4 5 VDD [V] 6 7 G1dB [dB] 32 2500 Output Power [dBm] Output Power [dBm] 34 Drain Current [mA] 4V 5V 6V 2700 36 2700 36 ES/EMM5068VU Preliminary X-Band Power Amplifier MMIC OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by Drain Current OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by Drain Current VDD=6V @11.7GHz VDD=6V @9.5GHz 2100 32 1900 28 1700 26 1500 24 1300 22 1100 900 20 900 700 18 1900 28 1700 26 1500 24 1300 22 1100 20 -8 -4 0 4 8 12 700 -8 16 -4 0 OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by Drain Current 12 16 VDD=6V 1100mA 1300mA 1100 A 2500 40 2300 38 2100 36 Drain Current [mA] 36 40 9.5GHz 11.7GHz 13.3GHz 38 36 34 34 32 32 30 30 28 28 1100 26 26 20 900 24 24 18 700 22 30 1900 28 1700 26 1500 24 1300 22 -8 -4 0 4 8 12 P1dB [dBm] Output Power [dBm] 8 OUTPUT POWER, GAIN vs. Drain Current VDD=6V @13.3GHz 32 4 Input Power [dBm] Input Power [dBm] 34 2100 30 30 18 2300 Drain Current [mA] 34 1100mA 1300mA 1100 A 1000 16 Input Power [dBm] 5 22 1100 1200 1300 Drain Current [mA] 1400 G1dB [dB] 32 2300 Output Power [dBm] Output Power [dBm] 34 Drain Current [mA] 1100mA 1300mA 1100 A 2500 36 2500 36 Preliminary ES/EMM5068VU X-Band Power Amplifier MMIC IMD PERFORMANCE vs OUTPUT POWER by Drain Voltage IMD PERFORMANCE vs OUTPUT POWER by Drain Voltage IDD(DC)=1300m A @9.5GHz IDD(DC)=1300m AV @11.7GHz -20 -25 Intermodulation Distortion [dBc] Intermodulation Distortion [dBc] -20 4V 5V 6V -30 -35 IM3 -40 -45 -50 -55 -60 IM5 -65 -70 4V 5V 6V -30 -35 IM3 -40 -45 -50 -55 -60 IM5 -65 -70 17 19 21 23 25 27 29 31 17 2-Tone Total Output Pow er [dBm ] IDD(DC)=1300m A @13.3GHz -20 -25 4V 5V 6V -30 -35 IM3 -40 -45 -50 -55 -60 IM5 -65 -70 17 19 21 23 25 27 19 21 23 25 27 29 2-Tone Total Output Pow er [dBm ] IMD PERFORMANCE vs OUTPUT POWER by Drain Voltage Intermodulation Distortion [dBc] -25 29 31 2-Tone Total Output Pow er [dBm ] 6 31 ES/EMM5068VU Preliminary X-Band Power Amplifier MMIC IMD PERFORMANCE vs OUTPUT POWER by Drain Current IMD PERFORMANCE vs OUTPUT POWER by Drain Current VDD=6V @11.7GHz VDD=6V @9.5GHz -20 1100m A 1300m A 1100 A -25 -30 Intermodulation Distortion [dBc] Intermodulation Distortion [dBc] -20 -35 IM3 -40 -45 -50 -55 IM5 -60 -65 -70 -30 -35 IM3 -40 -45 -50 -55 -60 IM5 -65 -70 17 19 21 23 25 27 29 31 2-Tone Total Output Pow er [dBm ] VDD=6V @13.3GHz -20 1100m A 1300m A -25 -30 -35 IM3 -40 -45 -50 -55 -60 IM5 -65 -70 17 19 21 23 25 27 17 19 21 23 25 27 29 2-Tone Total Output Pow er [dBm ] IMD PERFORMANCE vs OUTPUT POWER by Drain Current Intermodulation Distortion [dBc] 1100m A 1300m A -25 29 31 2-Tone Total Output Pow er [dBm ] 7 31 Preliminary ES/EMM5068VU X-Band Power Amplifier MMIC OUTPUT POWER, GAIN vs. TEMPERATURE 36 34 34 32 32 30 30 28 28 26 9.5GHz 11.7GHz 13.3GHz 26 24 22 24 -50 -25 0 25 50 o Temperature [ C] 8 75 100 Gain [dB] @Pin=-6dBm Psat [dBm] @Pin=12dBm VDD=6V, IDD(DC)=1300mA ES/EMM5068VU Preliminary X-Band Power Amplifier MMIC ■S-PARAMETER VDD=6V, IDD(DC)=1300mA Input/Output Return Loss vs. Frequency Input/Output Return Loss [ dB ] VDD=6V, IDD=1300mA 0 -10 -20 -30 - Input Return Loss - Output Return Loss -40 9 10 11 12 13 14 Frequency [GHz] Small Signal Gain vs. Frequency VDD=6V, IDD=1300mA Small Signal Gain [dB] 32 28 24 20 16 12 8 4 0 9 10 11 12 Frequency [GHz] 9 13 14 Preliminary ES/EMM5068VU X-Band Power Amplifier MMIC ■S-PARAMETER VDD=6V, IDD(DC)=1300mA Frequency [GHz] 9.3 9.4 9.5 9.6 9.7 9.8 9.9 10.0 10.1 10.2 10.3 10.4 10.5 10.6 10.7 10.8 10.9 11.0 11.1 11.2 11.3 11.4 11.5 11.6 11.7 11.8 11.9 12.0 12.1 12.2 12.3 12.4 12.5 12.6 12.7 12.8 12.9 13.0 13.1 13.2 13.3 13.4 13.5 S11 MAG ANG 0.299 -75.9 0.286 -79.8 0.272 -83.1 0.258 -86.8 0.243 -90.2 0.229 -93.7 -97.2 0.217 0.203 -99.4 -102.3 0.186 -105.8 0.171 -108.6 0.153 0.136 -111.9 0.117 -113.8 0.094 -115.0 0.071 -118.0 0.047 -119.8 0.021 -112.0 6.6 0.010 0.040 30.3 0.076 31.8 30.0 0.110 26.0 0.146 21.2 0.181 16.4 0.216 12.0 0.251 0.282 8.4 0.307 4.0 0.337 -0.2 0.359 -4.4 0.385 -8.6 0.403 -12.0 -16.4 0.414 0.426 -20.5 0.433 -24.3 0.436 -28.3 0.436 -31.4 0.429 -34.4 -37.5 0.421 -39.8 0.415 0.408 -41.9 0.402 -43.8 0.398 -45.3 0.394 -47.3 S21 MAG ANG 22.375 -37.1 22.230 -51.7 22.101 -66.1 21.906 -80.0 21.784 -93.7 21.610 -107.1 21.473 -120.1 21.385 -133.1 21.328 -145.8 21.373 -158.5 21.461 -171.0 21.575 176.5 21.702 163.9 21.904 151.3 138.4 22.113 22.540 125.6 22.708 112.4 22.883 99.4 85.7 23.161 23.333 72.0 23.299 58.4 23.283 44.8 30.9 23.129 22.757 17.3 22.587 3.7 22.307 -9.8 -23.0 21.801 21.387 -36.2 -49.4 21.113 20.670 -62.4 20.338 -75.0 20.065 -88.1 19.624 -101.1 19.288 -114.4 19.027 -127.2 18.654 -140.1 -152.8 18.195 17.858 -165.5 -178.2 17.512 17.274 169.3 157.4 17.111 144.9 17.108 132.6 17.181 10 S12 MAG ANG -159.0 0.001 0.001 -171.2 -166.0 0.001 -174.2 0.001 0.000 -174.7 -162.9 0.001 -166.4 0.001 -170.5 0.001 0.000 179.6 0.000 -177.1 -154.3 0.001 -145.5 0.001 -153.6 0.001 -152.2 0.001 0.001 -143.1 -144.8 0.001 -139.4 0.001 -142.2 0.001 0.001 -143.1 0.001 -131.6 -134.6 0.001 0.001 -136.1 -143.5 0.001 -147.5 0.001 -143.9 0.001 -136.8 0.001 -144.0 0.001 -130.5 0.001 0.001 -141.1 0.001 -131.9 -133.6 0.001 -120.0 0.001 0.001 -121.0 0.001 -117.6 0.001 -119.3 0.002 -111.7 0.002 -112.5 0.002 -113.4 0.002 -117.5 0.002 -123.3 0.003 -126.9 0.003 -131.6 0.004 -132.3 S22 MAG ANG 0.293 -24.1 0.296 -29.0 0.297 -33.3 0.300 -37.5 0.304 -40.9 0.305 -44.2 0.307 -47.4 0.308 -50.2 0.307 -52.9 0.305 -55.8 -58.2 0.301 0.294 -61.0 0.287 -63.4 0.276 -65.7 -67.9 0.261 0.243 -70.1 0.224 -71.4 0.200 -72.3 -72.2 0.174 -69.8 0.148 -63.9 0.123 -53.2 0.102 0.092 -36.7 0.093 -18.2 -4.8 0.109 0.131 4.1 8.5 0.154 0.179 10.1 0.202 10.5 0.223 9.5 0.240 8.5 0.255 6.8 0.267 4.9 0.276 3.2 0.282 1.4 0.287 0.1 0.290 -1.2 0.292 -2.3 0.297 -2.8 0.300 -3.6 0.309 -4.3 -5.4 0.319 0.334 -6.8 ES/EMM5068VU Preliminary X-Band Power Amplifier MMIC ∆Tch vs. DRAIN VOLTAGE (Reference Data) IDD(DC)=1300mA 45 40 35 o ∆ Tch[ C] 30 25 20 15 10 5 0 3 4 5 6 7 VDD[V] Note : ∆Tch : Channel Temperature Rise from PCB surface MTTF vs. Tch 1.E+12 1.E+11 Ea=1.56eV 1.E+10 MTTF [hrs] 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 1.E+04 1.E+03 1.E+02 1.E+01 50 100 150 o Tch [ C] 11 200 250 Preliminary ES/EMM5068VU X-Band Power Amplifier MMIC ■ Block diagram PIN ASSIGNMENT 1 : VGG 2 : RF in 3 : VGG 4 : VDD 5 : RF out 6 : VDD ■ Recommended Bias Circuit D N G 1uF 1000pF 1000pF 1uF VGG 2 5 1 6 1000pF VDD VDD D N G 1uF 4 t u o F R n i F R VGG 3 1000pF 1uF Note 1: The capacitors are recommended on the bias supply line, close to the package, in order to prevent video oscillations which could damage the module. Note 2: Two pins named VGG are internally connected. Note 3: Two pins named VDD are internally connected. 12 ES/EMM5068VU Preliminary X-Band Power Amplifier MMIC ■ Package Outline 13 Preliminary ES/EMM5068VU X-Band Power Amplifier MMIC ■ PCB Pads and Solder-resist Pattern Unit: mm [inches] PCB: Diclad-522 Under plating: Cu : Nickel (Ni) 1 ∼ 4 µm Top plating: Gold (Au) (Flash plating 0.1 µm or less) Resist Pattern 14 ES/EMM5068VU Preliminary X-Band Power Amplifier MMIC ■TUNING PERFORMANCE Device performance at higher band (11.7 to 13.3GHz) can be improved by changing PCB line pattern. PCB: RO4003 Er : 3.38 Thickness : 0.2mm Tuning Stub IMD vs. Output Power Output Power vs. Frequency VDD=6V, IDD(DC)=1300mA, with-Tuning VDD=6V, IDD(DC)=1300m A, w ith-Tuning -20 Output Power[dBm] 34 Pin=+10dBm 32 30 Pin=+4dBm 28 26 Pin=0dBm 24 22 Pin=-4dBm 20 8 9 10 11 12 13 14 Intermodulation Distortion [dBc] 36 P1dB -25 9.5GHz 11.7GHz 13.3GHz -30 -35 IM3 -40 -45 -50 -55 -60 IM5 -65 -70 15 17 Frequency[GHz] 19 21 23 25 27 29 2-Tone Total Output Pow er [dBm ] 15 31 Preliminary ES/EMM5068VU X-Band Power Amplifier MMIC For further information please contact : Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・Do not put these products into the mouth. ・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. ・Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2005 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. 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