FMBBAV99 200 mW EPITAXIAL PLANAR DIODES Data Sheet Mechanical Dimensions Description .110 .060 Pin 2 Pin 1 .037 .115 .037 Pin 3 .016 2 3 1 .043 .016 .004 Features n PLANAR PROCESS n INDUSTRY STANDARD SOT-23 PACKAGE n 200 mW POWER DISSIPATION n MEETS UL SPECIFICATION 94V-0 Electrical Characteristics @ 25 O C. FMBBAV99 Units FMBBAV99 85 75 Volts Volts Maximum Ratings Peak Reverse Voltage...VRM RMS Reverse Voltage...VR(rms) Average Forward Rectified Current...IO ............................................. 2 1 5 ............................................... mAmps Non-Repetitive Peak Forward Surge Current...I FSM ............................................. 4.0 ............................................... Amps Forward Voltage...VF @ IF = 100 mA ............................................. 1.0 ............................................... Volts ............................................. 5 0 ............................................... µAmps Power Dissipation...PD ............................................. 2 5 0 ............................................... mW Typical Junction Capacitance...CJ ............................................. 1.5 ............................................... pF Reverse Recovery Time...tRR ............................................. 4.0 ............................................... nS Operating Temperature Range...TJ ......................................... -25 to 85 .......................................... °C Storage Temperature Range...TSTRG ......................................... -65 to 150 .......................................... °C DC Reverse Current...IR @ VR = 70V Device Under TTest est .01 uF PVV = 100nS Output Trr IF 5K Ohms 50 Ohms 0.1 IR IR RG = 50 Ohms Page 10-27