1N4448W High Speed Switching Diode Data Sheet Description Mechanical Dimensions 1N4448W INCHES SOD-123 1. CATHODE Features 2. ANODE DIM A B C D E F G H MM MIN 0.055 0.100 0.037 0.020 0.004 0.000 MAX MIN MAX 0.071 1.40 1.80 0.112 2.55 2.85 0.053 0.95 1.35 0.028 0.50 0.70 0.25 0.004 0.00 0.10 0.006 0.15 0.140 0.152 3.55 3.85 n SURFACE MOUNT PACKAGE n FAST SWITCHING DIODE n MEETS UL SPECIFICATION 94V-0 n ELECTRICALLY IDENTICAL TO JEDEC 1N4448 Electrical Characteristics @ 25 O C. Maximum Ratings Peak Reverse Voltage...VRM RMS Reverse Voltage...VR(rms) Units 1N4448W 100 75 Volts Volts Average Rectified Current...IF(AV) ............................................. 150 ............................................... mAmps Peak Forward Surge Current...IFSM ............................................. 500 ............................................... mAmps Power Dissipation...PD ............................................. 500 ............................................... ............................................. 450 ............................................... Thermal Resistence...RθJA Storage and Operating Temperature Range...TSTRG & J ..................................... -65 to 150 ...................................... Electrical Characteristics TJ = 25 °C Forward Voltage...VF @ IF = 10 mA DC Reverse Current...IR @ VR = 20V @ VR = 75V VR = 20V, TJ = 150°C Typical Junction Capacitance...CJ Voltage Rise When switched ON ( 50 mA Pulses) Reverse Recovery Time...TRR Rectification Efficiency...ηv mW °C/W °C ............................................. 1.0 ............................................... Volts ............................................. 25.0 ............................................... ............................................. 5.0 ............................................... ............................................. 2.5 ............................................... nAmps µAmps µAmps pF nS ............................................. 4.0 ............................................... ............................................. 0.45 min ......................................... nS - ............................................. 50 ............................................... ............................................. 4 ............................................... 1N4448W High Speed Switching Diode Data Sheet Dynamic forward resistance versus forward current 10000 Tj = 25oC Tj = 25oC f = 1kHz 1000 r d (Ω ) Tj = 100oC 100 10 1 0.01 0.1 1 IF (mA) 10 100 Relative capacitance versus reverse voltage Ctot(VR)/Ctot(0V) 1.1 Tj = 25C f = 1MHz 1 0.9 0.8 0.7 0 2 4 6 VR (V) .01 uF PVV = 100nS Device Under TTest est Trr IF 5K Ohms 50 Ohms RG = 50 Ohms Output IR 0.1 IR 8 10 1N4448W High Speed Switching Diode Data Sheet Leakage current versus junction temperature 10000 IR (nA) 1000 100 10 VR = 20V 1 0 100 o 200 Tj ( C) Admissable repetitive peak forward current versus pulse duration Valid provided that leads at a distance of 8mm from case are kept at ambient temperature 100 IFRM (A) I 10 υ=0 T = 1/t p IF R M tp 0.1 0.2 1 υ = t p /T t T 0.5 0.1 0.00001 0.0001 0.001 0.01 tp (s) 0.1 1 10