200 mW EPITAXIAL PLANAR DIODES Data Sheet Mechanical Dimensions Description .110 .060 BAV70 3 .037 1 .115 .037 Pin 2 2 .016 1 3 2 Pin 3 .043 Pin 1 .016 .004 Features n PLANAR PROCESS n INDUSTRY STANDARD SOT-23 PACKAGE n 200 mW POWER DISSIPATION n MEETS UL SPECIFICATION 94V-0 Maximum Ratings Peak Reverse Voltage...VRM RMS Reverse Voltage...VR(rms) BAV70 Units BAV70 85 75 Volts Volts Average Forward Rectified Current...IO ............................................. 625 ............................................... mAmps Non-Repetitive Peak Forward Surge Current...IFSM ............................................. 4.0 ............................................... Power Dissipation...PD ......................................... Operating Temperature Range...TJ ......................................... -25 to 85 .......................................... °C Storage Temperature Range...TSTRG ......................................... -65 to 150 .......................................... °C ............................................. 1.0 ............................................... Volts ............................................. 2.5 ............................................... µAmps Maximum Diode Capacitance...CD ............................................. 1.5 ............................................... pF Maximum Reverse Recovery Time...tRR ............................................. 4.0 ............................................... ns 200 .......................................... Amps mW Electrical Characteristics Maximum Forward Voltage...VF @ IF = 50 mA Maximum DC Reverse Current...IR @ VR = 70V .01 uF PVV = 100ns Device Under TTest est 50 Ohms RG = 50 Ohms Page 10-20 Trr IF 5K Ohms Output IR 0.1 IR