FILTRONIC FMA3058

FMA3058
Pilot Datasheet v2.5
2-20 GHZ BROADBAND MMIC AMPLIFIER
FEATURES:
•
•
•
•
•
•
•
•
FUNCTIONAL SCHEMATIC:
15dB Gain
Low Noise Amplifier
Single Supply (Self Biased +5V @ 90mA)
12 dBm P1dB Output Power at 20GHz
pHEMT Technology
Bias Control
Input Return Loss < -12 dB
Output Return Loss < -10 dB
VDD
RF Input
RF Output
GENERAL DESCRIPTION:
The FMA3058 is a high performance 2-20GHz
Gallium Arsenide monolithic travelling wave
amplifier. It is suitable for use in broadband
communication, instrumentation and electronic
warfare applications. The die is fabricated
using the Filtronic 0.25µm process. The Circuit
is DC blocked at both the RF input and the RF
output.
TYPICAL APPLICATIONS:
•
•
•
•
Test Instrumentation
Electronic Warfare
Broadband Communication Infrastructure
Fiber Optics
ELECTRICAL SPECIFICATIONS (SMALL-SIGNAL UNLESS OTHERWISE STATED):
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Small Signal Gain
2-20 GHz
–
15
–
dB
Gain Flatness
2-20 GHz
–
–
3
dB
Input Return Loss
2-20 GHz
–
-12
–
dB
Output Return Loss
2-20 GHz
–
-10
–
dB
Output Power at 1dB
2 GHz, 5V drain bias
–
18
–
dBm
compression point
10 GHz, 5V drain bias
–
18
–
dBm
20 GHz, 5V drain bias
–
15
–
dBm
Drain Current
5V drain bias
–
90
–
mA
Noise Figure
2 GHz, 5V drain bias
–
3.5
–
dB
10 GHz, 5V drain bias
–
3
–
dB
20 GHz, 5V drain bias
–
6.5
–
dB
Note: TAMBIENT = +25°C, Z0 = 50Ω Pads B and C open circuit
DIFFERENT BIAS CONFIGURATIONS:
The device has a default current, set by an on chip resistor. Pads B and C can be bonded to
ground to increase the device current by reducing the default resistance.
1
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FMA3058
Pilot Datasheet v2.5
ABSOLUTE MAXIMUM RATINGS:
PARAMETER
SYMBOL
ABSOLUTE
MAXIMUM
Max Input Power
Pin
+20dBm
Drain Voltage
VDD
+12V
Ptot
TBD
Thermal Resistivity
θJC
Operating Temp
Storage Temp
PAD REF
PAD NAME
DESCRIPTION
A
IN
RF Input
B
R2
Internal Source Bias Resistor
C
R1
Internal Source Bias Resistor
D
OUT
RF Output
TBD
E
GND
Ground
Toper
-55°C to +85°C
F
VD
Drain voltage
Tstor
-55°C to +150°C
G
VG
Optional Gate Voltage
Total Power
Dissipation
Note: Exceeding any one of these absolute
maximum ratings may cause permanent
damage to the device.
0.050
0.134
0.185
0.269
2.966
3.066
PAD LAYOUT:
1.500
1.443
1.369
G F E
1.141
1.041
D
0.530
0.430
A
0.506
0.422
0.385
0.301
C
B
0 REF
3.120
2.914
2.988
0 REF
0.054
0.154
Dimensions in mm.
2
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FMA3058
Pilot Datasheet v2.5
TYPICAL PERFORMANCE ON-WAFER:
Note: Measurement Conditions ID= 90 mA, VDD= 5 V, TAMBIENT = 25°C, Pads B and C open circuit.
Reverse Isolation
0.00
20.00
18.00
16.00
14.00
12.00
10.00
8.00
6.00
4.00
2.00
0.00
-10.00
-20.00
S12 (dB)
S21 (dB)
Gain
-30.00
-40.00
-50.00
-60.00
-70.00
2
4
6
8
10
12
14
16
18
2
20
4
6
8
0.00
0.00
-5.00
-5.00
-10.00
-10.00
-15.00
-15.00
-20.00
-25.00
14
16
18
20
16
18
20
18
20
-20.00
-25.00
-30.00
-30.00
-35.00
-35.00
-40.00
-40.00
2
4
6
8
10
12
14
16
18
2
20
4
6
8
Noise Figure
7
P1dB (dBm)
6
5
4
3
2
1
0
6
8
10
12
12
14
P1dB
8
4
10
Frequency (GHz)
Frequency (GHz)
Noise Figure (dB)
12
Output return Loss
S22 (dB)
S11 (dB)
Input return Loss
2
10
Frequency (GHz)
Frequency (GHz)
14
16
18
20
20
18
16
14
12
10
8
6
4
2
0
2
Frequency (GHz)
4
6
8
10
12
14
16
Frequency (GHz)
3
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FMA3058
Pilot Datasheet v2.5
TYPICAL PERFORMANCE ON-WAFER OVER TEMPERATURE:
Note: Measurement Conditions ID= 90 mA, VDD= 5 V, Pads B and C open circuit.
TAMBIENT = 25°C
TCOLD = -55°C
THOT = +85°C
Gain
Reverse Isolation
0.00
-10.00
16.00
14.00
12.00
-20.00
S12 (dB)
S21 (dB)
20.00
18.00
10.00
8.00
6.00
4.00
-30.00
-40.00
-50.00
-60.00
2.00
0.00
-70.00
2
4
6
8
10
12
14
16
18
2
20
4
6
8
Frequency (GHz)
Input Return Loss
12
14
16
18
20
Output Return Loss
5.00
0.00
0.00
-5.00
-5.00
-10.00
-15.00
S22 (dB)
S11 (dB)
10
Frequency (GHz)
-20.00
-25.00
-10.00
-15.00
-20.00
-25.00
-30.00
-30.00
-35.00
-35.00
-40.00
-40.00
2
4
6
8
10
12
14
16
18
0
20
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
Frequency (GHz)
P1dB
P1dB (dBm)
20
18
16
14
12
10
8
6
4
2
0
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
4
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FMA3058
Pilot Datasheet v2.5
BIASING CIRCUIT SCHEMATIC:
VDD
100pF
100nF
RF Output
RF Input
ASSEMBLY DIAGRAM:
It is recommended that the RF connections be made using bond wires with 25µm diameter and a
maximum length of 300µm. Ground connections should be made according to the required bias
conditions.
To Evaluation Board via an 0402
Surface Mounted capacitor (100nF)
100pF Chip Capacitor
Ground connection
User application
50 Ohms line
User application
50 Ohms line
BILL OF MATERIALS:
COMPONENT
All RF tracks should be 50Ω characteristic material
Capacitor, 100pF, chip capacitor
Capacitor, 100nF, 0402
5
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FMA3058
Pilot Datasheet v2.5
PREFERRED ASSEMBLY INSTRUCTIONS:
ORDERING INFORMATION:
PART NUMBER
GaAs devices are fragile and should be
handled with great care. Specially designed
collets should be used where possible.
DESCRIPTION
Die in Waffle-pack
FMA3058-000-WP
(Gel-pak available on request)
The recommended die attach is gold/tin
eutectic solder under a nitrogen atmosphere.
Stage temperature should be 280-290°C;
maximum time at temperature is one minute.
The recommended wire bond method is
thermo-compression wedge bonding with 0.7
or 1.0 mil (0.018 or 0.025 mm) gold wire.
Stage temperature should be 250-260°C.
Bonds should be made from the die first and
then to the mounting substrate or package.
The physical length of the bondwires should be
minimised especially when making RF or
ground connections.
HANDLING
PRECAUTIONS:
To avoid damage to the devices care should
be exercised during handling.
Proper
Electrostatic Discharge (ESD) precautions
should be observed at all stages of storage,
handling, assembly, and testing.
These
devices should be treated as Class 0 (0-250 V)
as defined in JEDEC Standard No. 22-A114.
Further information on ESD control measures
can be found in MIL-STD-1686 and MILHDBK-263.
APPLICATION NOTES & DESIGN DATA:
Application Notes and design data including Sparameters are available on request.
DISCLAIMERS:
This product is not designed for use in any
space based or life sustaining/supporting
equipment.
6
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com