FMA3058 Pilot Datasheet v2.5 2-20 GHZ BROADBAND MMIC AMPLIFIER FEATURES: • • • • • • • • FUNCTIONAL SCHEMATIC: 15dB Gain Low Noise Amplifier Single Supply (Self Biased +5V @ 90mA) 12 dBm P1dB Output Power at 20GHz pHEMT Technology Bias Control Input Return Loss < -12 dB Output Return Loss < -10 dB VDD RF Input RF Output GENERAL DESCRIPTION: The FMA3058 is a high performance 2-20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation and electronic warfare applications. The die is fabricated using the Filtronic 0.25µm process. The Circuit is DC blocked at both the RF input and the RF output. TYPICAL APPLICATIONS: • • • • Test Instrumentation Electronic Warfare Broadband Communication Infrastructure Fiber Optics ELECTRICAL SPECIFICATIONS (SMALL-SIGNAL UNLESS OTHERWISE STATED): PARAMETER CONDITIONS MIN TYP MAX UNITS Small Signal Gain 2-20 GHz – 15 – dB Gain Flatness 2-20 GHz – – 3 dB Input Return Loss 2-20 GHz – -12 – dB Output Return Loss 2-20 GHz – -10 – dB Output Power at 1dB 2 GHz, 5V drain bias – 18 – dBm compression point 10 GHz, 5V drain bias – 18 – dBm 20 GHz, 5V drain bias – 15 – dBm Drain Current 5V drain bias – 90 – mA Noise Figure 2 GHz, 5V drain bias – 3.5 – dB 10 GHz, 5V drain bias – 3 – dB 20 GHz, 5V drain bias – 6.5 – dB Note: TAMBIENT = +25°C, Z0 = 50Ω Pads B and C open circuit DIFFERENT BIAS CONFIGURATIONS: The device has a default current, set by an on chip resistor. Pads B and C can be bonded to ground to increase the device current by reducing the default resistance. 1 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FMA3058 Pilot Datasheet v2.5 ABSOLUTE MAXIMUM RATINGS: PARAMETER SYMBOL ABSOLUTE MAXIMUM Max Input Power Pin +20dBm Drain Voltage VDD +12V Ptot TBD Thermal Resistivity θJC Operating Temp Storage Temp PAD REF PAD NAME DESCRIPTION A IN RF Input B R2 Internal Source Bias Resistor C R1 Internal Source Bias Resistor D OUT RF Output TBD E GND Ground Toper -55°C to +85°C F VD Drain voltage Tstor -55°C to +150°C G VG Optional Gate Voltage Total Power Dissipation Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device. 0.050 0.134 0.185 0.269 2.966 3.066 PAD LAYOUT: 1.500 1.443 1.369 G F E 1.141 1.041 D 0.530 0.430 A 0.506 0.422 0.385 0.301 C B 0 REF 3.120 2.914 2.988 0 REF 0.054 0.154 Dimensions in mm. 2 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FMA3058 Pilot Datasheet v2.5 TYPICAL PERFORMANCE ON-WAFER: Note: Measurement Conditions ID= 90 mA, VDD= 5 V, TAMBIENT = 25°C, Pads B and C open circuit. Reverse Isolation 0.00 20.00 18.00 16.00 14.00 12.00 10.00 8.00 6.00 4.00 2.00 0.00 -10.00 -20.00 S12 (dB) S21 (dB) Gain -30.00 -40.00 -50.00 -60.00 -70.00 2 4 6 8 10 12 14 16 18 2 20 4 6 8 0.00 0.00 -5.00 -5.00 -10.00 -10.00 -15.00 -15.00 -20.00 -25.00 14 16 18 20 16 18 20 18 20 -20.00 -25.00 -30.00 -30.00 -35.00 -35.00 -40.00 -40.00 2 4 6 8 10 12 14 16 18 2 20 4 6 8 Noise Figure 7 P1dB (dBm) 6 5 4 3 2 1 0 6 8 10 12 12 14 P1dB 8 4 10 Frequency (GHz) Frequency (GHz) Noise Figure (dB) 12 Output return Loss S22 (dB) S11 (dB) Input return Loss 2 10 Frequency (GHz) Frequency (GHz) 14 16 18 20 20 18 16 14 12 10 8 6 4 2 0 2 Frequency (GHz) 4 6 8 10 12 14 16 Frequency (GHz) 3 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FMA3058 Pilot Datasheet v2.5 TYPICAL PERFORMANCE ON-WAFER OVER TEMPERATURE: Note: Measurement Conditions ID= 90 mA, VDD= 5 V, Pads B and C open circuit. TAMBIENT = 25°C TCOLD = -55°C THOT = +85°C Gain Reverse Isolation 0.00 -10.00 16.00 14.00 12.00 -20.00 S12 (dB) S21 (dB) 20.00 18.00 10.00 8.00 6.00 4.00 -30.00 -40.00 -50.00 -60.00 2.00 0.00 -70.00 2 4 6 8 10 12 14 16 18 2 20 4 6 8 Frequency (GHz) Input Return Loss 12 14 16 18 20 Output Return Loss 5.00 0.00 0.00 -5.00 -5.00 -10.00 -15.00 S22 (dB) S11 (dB) 10 Frequency (GHz) -20.00 -25.00 -10.00 -15.00 -20.00 -25.00 -30.00 -30.00 -35.00 -35.00 -40.00 -40.00 2 4 6 8 10 12 14 16 18 0 20 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) Frequency (GHz) P1dB P1dB (dBm) 20 18 16 14 12 10 8 6 4 2 0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) 4 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FMA3058 Pilot Datasheet v2.5 BIASING CIRCUIT SCHEMATIC: VDD 100pF 100nF RF Output RF Input ASSEMBLY DIAGRAM: It is recommended that the RF connections be made using bond wires with 25µm diameter and a maximum length of 300µm. Ground connections should be made according to the required bias conditions. To Evaluation Board via an 0402 Surface Mounted capacitor (100nF) 100pF Chip Capacitor Ground connection User application 50 Ohms line User application 50 Ohms line BILL OF MATERIALS: COMPONENT All RF tracks should be 50Ω characteristic material Capacitor, 100pF, chip capacitor Capacitor, 100nF, 0402 5 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FMA3058 Pilot Datasheet v2.5 PREFERRED ASSEMBLY INSTRUCTIONS: ORDERING INFORMATION: PART NUMBER GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. DESCRIPTION Die in Waffle-pack FMA3058-000-WP (Gel-pak available on request) The recommended die attach is gold/tin eutectic solder under a nitrogen atmosphere. Stage temperature should be 280-290°C; maximum time at temperature is one minute. The recommended wire bond method is thermo-compression wedge bonding with 0.7 or 1.0 mil (0.018 or 0.025 mm) gold wire. Stage temperature should be 250-260°C. Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimised especially when making RF or ground connections. HANDLING PRECAUTIONS: To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 0 (0-250 V) as defined in JEDEC Standard No. 22-A114. Further information on ESD control measures can be found in MIL-STD-1686 and MILHDBK-263. APPLICATION NOTES & DESIGN DATA: Application Notes and design data including Sparameters are available on request. DISCLAIMERS: This product is not designed for use in any space based or life sustaining/supporting equipment. 6 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com