FILTRONIC FPD1500DFN

FPD1500DFN
LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT
•
PERFORMANCE (1850 MHz)
♦ 27 dBm Output Power (P1dB)
♦ 18 dB Small-Signal Gain (SSG)
♦ 1.2 dB Noise Figure
♦ 42 dBm Output IP3
♦ 45% Power-Added Efficiency
♦ Evaluation Boards Available
♦ Featuring Lead Free Finish Package
•
DESCRIPTION AND APPLICATIONS
The FPD1500DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT). It utilizes a 0.25 μm x 1500 μm Schottky barrier Gate, defined by
high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes
parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a
range of bias conditions and input power levels. The FPD1500DFN is available in die form and in
other packages.
Typical applications include drivers or output stages in PCS/Cellular base station high-interceptpoint LNAs, WLL and WLAN systems, and other types of wireless infrastructure systems.
•
ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
RF SPECIFICATIONS MEASURED AT f = 1850 MHz USING CW SIGNAL
Power at 1dB Gain Compression
P1dB
VDS = 5 V; IDS = 50% IDSS
27
dBm
Small-Signal Gain
SSG
VDS = 5 V; IDS = 50% IDSS
18
dB
Power-Added Efficiency
PAE
VDS = 5 V; IDS = 50% IDSS;
POUT = P1dB
45
%
Noise Figure
NF
VDS = 5 V; IDS = 50% IDSS
1.2
dB
Output Third-Order Intercept Point
IP3
VDS = 5V; IDS = 50% IDSS
Matched for optimal power
40
dBm
Matched for best IP3
42
(from 15 to 5 dB below P1dB)
Saturated Drain-Source Current
IDSS
VDS = 1.3 V; VGS = 0 V
Maximum Drain-Source Current
IMAX
VDS = 1.3 V; VGS ≅ +1 V
750
mA
Transconductance
GM
VDS = 1.3 V; VGS = 0 V
400
mS
Gate-Source Leakage Current
IGSO
VGS = -5 V
1
15
μA
Pinch-Off Voltage
|VP|
VDS = 1.3 V; IDS = 1.5 mA
0.7
0.9
1.3
V
Gate-Source Breakdown Voltage
|VBDGS|
IGS = 1.5 mA
12
18
V
Gate-Drain Breakdown Voltage
|VBDGD|
IGD = 1.5 mA
12
18
V
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http://www.filtronic.co.uk/semis
375
465
550
mA
Revised: 11/14/05
Email: [email protected]
FPD1500DFN
LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT
•
ABSOLUTE MAXIMUM RATINGS1
Parameter
Symbol
Test Conditions
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain-Source Current
Gate Current
Max
Units
-3V < VGS < +0V
8
V
0V < VDS < +8V
-3
V
IDS
For VDS > 2V
IDSS
mA
IG
Forward or reverse current
15
mA
RF Input Power
PIN
Under any acceptable bias state
350
mW
Channel Operating Temperature
TCH
Under any acceptable bias state
175
ºC
Storage Temperature
TSTG
Non-Operating Storage
150
ºC
Total Power Dissipation
PTOT
See De-Rating Note below
2.2
W
Comp.
Under any bias conditions
5
dB
2
Gain Compression
3
Min
-40
Simultaneous Combination of Limits
2 or more Max. Limits
80
2
TAmbient = 22°C unless otherwise noted
Max. RF Input Limit must be further limited if input VSWR > 2.5:1
3
Users should avoid exceeding 80% of 2 or more Limits simultaneously
%
1
Notes:
• Operating conditions that exceed the Absolute Maximum Ratings will result in permanent damage to the device.
• Total Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where:
PDC: DC Bias Power
PIN: RF Input Power
POUT: RF Output Power
• Total Power Dissipation to be de-rated as follows above 22°C:
PTOT= 2.2W – (0.0167W/°C) x TPACK
where TPACK = source lead temperature above 22°C
(coefficient of de-rating formula is the Thermal Conductivity)
Example: For a 65°C source lead temperature: PTOT = 2.2W – (0.0167 x (65 – 22)) = 1.48W
• The use of a filled via-hole directly beneath the exposed heatsink tab on the bottom of the package is strongly
recommended to provide for adequate thermal management. Ideally the bottom of the circuit board is
affixed to a heatsink or thermal radiator.
•
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A per ESD-STM5.1-1998, Human Body Model.
Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.
•
APPLICATIONS NOTES & DESIGN DATA
Applications Notes are available from your local Filtronic Sales Representative or directly from the
factory. Complete design data, including S-parameters, noise data, and large-signal models are
available on the Filtronic web site. Evaluation Boards available upon request.
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http://www.filtronic.co.uk/semis
Revised: 11/14/05
Email: [email protected]
FPD1500DFN
LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT
•
BIASING GUIDELINES
¾ Active bias circuits provide good performance stabilization over variations of operating
temperature, but require a larger number of components compared to self-bias or dual-biased.
Such circuits should include provisions to ensure that Gate bias is applied before Drain bias,
otherwise the pHEMT may be induced to self-oscillate. Contact your Sales Representative for
additional information.
¾ Dual-bias circuits are relatively simple to implement, but will require a regulated negative
voltage supply for depletion-mode devices such as the FPD1500DFN.
¾ For standard Class A operation, a 50% of IDSS bias point is recommended. A small amount of
RF gain expansion prior to the onset of compression is normal for this operating point. Note that
pHEMTs, since they are “quasi- E/D mode” devices, exhibit Class AB traits when operated at
50% of IDSS. To achieve a larger separation between P1dB and IP3, an operating point in the 25%
to 33% of IDSS range is suggested. Such Class AB operation will not degrade the IP3
performance.
•
PACKAGE OUTLINE (dimensions in mm)
All information and specifications subject to change without notice.
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http://www.filtronic.co.uk/semis
Revised: 11/14/05
Email: [email protected]
FPD1500DFN
LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT
•
PCB FOOT PRINT
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TYPICAL I-V CHARACTERISTICS
DC IV Curves FPD1500SOT89
0.60
Drain-Source Current (A)
0.50
0.40
VG=-1.5V
VG-1.25V
VG=-1.00V
VG=-0.75V
VG=-0.5V
VG=-0.25V
VG=0V
0.30
0.20
0.10
0.00
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Drain-Source Voltage (V)
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http://www.filtronic.co.uk/semis
Revised: 11/14/05
Email: [email protected]
FPD1500DFN
LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT
Note: The recommended method for measuring IDSS, or any particular IDS, is to set the Drain-Source
voltage (VDS) at 1.3V. This measurement point avoids the onset of spurious self-oscillation which
would normally distort the current measurement (this effect has been filtered from the I-V curves
presented above). Setting the VDS > 1.3V will generally cause errors in the current measurements,
even in stabilized circuits.
Recommendation: Traditionally a device’s IDSS rating (IDS at VGS = 0V) was used as a predictor of
RF power, and for MESFETs there is a correlation between IDSS and P1dB (power at 1dB gain
compression). For pHEMTs it can be shown that there is no meaningful statistical correlation
between IDSS and P1dB; specifically a linear regression analysis shows r2 < 0.7, and the regression
fails the F-statistic test. IDSS is sometimes useful as a guide to circuit tuning, since the S22 does vary
with the quiescent operating point IDS.
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http://www.filtronic.co.uk/semis
Revised: 11/14/05
Email: [email protected]