FPD2000AS Datasheet v3.0 2W PACKAGED POWER PHEMT FEATURES: • • • • • • • PACKAGE: 33 dBm Output Power (P1dB) @1.8GHz 14 dB Power Gain (G1dB) @1.8GHz 46 dBm Output IP3 10V Operation 50% Power-Added Efficiency Evaluation Boards Available Usable Gain to 4GHz TYPICAL APPLICATIONS: GENERAL DESCRIPTION: • The FPD2000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band. The surface-mount package has been optimized for low parasitics. • Drivers or output stages in PCS/Cellular base station transmitter amplifiers Power applications in WLL/WLAN and WiMax (3.5GHz) amplifiers ELECTRICAL SPECIFICATIONS: PARAMETER SYMBOL CONDITIONS MIN TYP 32 33 12.5 14.0 MAX UNITS VDS = 10V; IDS = 350 mA Power at 1dB Gain Compression P1dB ΓS and ΓL tuned for Optimum IP3 dBm VDS = 10V; IDS = 350 mA Power Gain at dB Gain Compression G1dB ΓS and ΓL tuned for Optimum IP3 VDS = 10 V; IDS = 350 mA Maximum Stable Gain MSG S21/S12 20 dB 45 % -47 dBc PIN = 0dBm, 50Ω system VDS = 10V; IDS = 350 mA Power-Added Efficiency PAE at 1dB Gain Compression ΓS and ΓL tuned for Optimum IP3 VDS = 10V; IDS = 350 mA 3rd-Order Intermodulation Distortion IM3 ΓS and ΓL tuned for Optimum IP3 POUT = 22 dBm Saturated Drain-Source Current IDSS VDS = 1.3 V; VGS = 0 V 1150 mA Maximum Drain-Source Current IMAX VDS = 1.3 V; VGS ≅ +1 V 1800 mA Transconductance GM VDS = 1.3 V; VGS = 0 V 1200 mS Gate-Source Leakage Current IGSO VGS = -3 V 35 85 µA Pinch-Off Voltage |VP| VDS = 1.3 V; IDS = 4 mA 0.7 0.9 1.4 V Gate-Source Breakdown Voltage |VBDGS| IGS = 4 mA 6 V Gate-Drain Breakdown Voltage |VBDGD| IGD = 4 mA 20 V Thermal Resistance (channel-to-case) ΘCC See Note on following page 20 °C/W Note: TAMBIENT = 22°; RF specification measured at f = 1850 MHz using CW signal (except as noted) 1 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD2000AS Datasheet v3.0 1 ABSOLUTE MAXIMUM RATING : PARAMETER SYMBOL TEST CONDITIONS ABSOLUTE MAXIMUM 7 Drain-Source Voltage VDS -3V < VGS < -0.5V 12V Gate-Source Voltage VGS 0V < VDS < +8V -3V Drain-Source Current IDS For VDS < 2V IDSS Gate Current IG Forward / reverse current +15/-2mA RF Input Power PIN Under any acceptable bias state 29.5dBm Channel Operating Temperature TCH Under any acceptable bias state 175°C Storage Temperature TSTG Non-Operating Storage -40°C to 150°C PTOT See De-Rating Note below 7.6W 2 3 Total Power Dissipation Notes: 1 TAmbient = 22°C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause permanent damage to the device; Users should avoid exceeding 80% of 2 or more Limits simultaneously 2 Max. RF Input Limit must be further limited if input VSWR > 2.5:1 3 Total Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where PDC: DC Bias Power, PIN: RF Input Power, POUT: RF Output Power Total Power Dissipation to be de-rated as follows above 22°C: PTOT= 7.6 - (0.05W/°C) x TPACK where TPACK= source tab lead temperature above 22°C (Coefficient of de-rating formula is the Thermal Conductivity) Example: For a 55°C carrier temperature: PTOT = 7.6W – (0.05 x (55 – 22)) = 5.95W 5 For optimum heat sinking, metal-filled through (Source) via holes should be used directly below the central metallized ground pad on the bottom of the package 6 Thermal Resistivity: The nominal value of 20°C/W is measured with the package mounted on a large heatsink with thermal compound to ensure adequate (unsoldered) contact. The package temperature is referred to the Source leads 7 Operating at absolute maximum VD continuously is not recommended. If operation is considered then IDS must be reduced in order to keep the part within it's thermal power dissipation limits. Therefore VGS is restricted to <-0.5V. BIASING GUIDELINES: • • • Active bias circuits provide good performance stabilization over variations of operating temperature, but require a larger number of components compared to self-bias or dual-biased. Such circuits should include provisions to ensure that Gate bias is applied before Drain bias, otherwise the pHEMT may be induced to self-oscillate. Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage supply for depletion-mode devices such as the FPD2000AS. The recommended 350mA bias point is nominally a Class AB mode. A small amount of RF gain expansion prior to the onset of compression is normal for this operating point. RECOMMENDED OPERATING BIAS CONDITIONS: • • Drain-Source Voltage: Quiescent Current: From 5V to 10V From 25% IDSS to 55% IDSS 2 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD2000AS Datasheet v3.0 TYPICAL MEASURED RF PERFORMANCE: Note: Measurement Conditions TAMBIENT = 22°C unless otherwise stated (VDS=10V, IDS=350mA, f=1800MHz) 3.00 30.00 2.50 28.00 2.00 26.00 Pout 1.50 Comp Point 24.00 1.00 70.00% 70.00% 60.00% 60.00% 50.00% 40.00% 30.00% 30.00% 20.00% 10.00% 22.00 .50 20.00 .00 10.00% 6.00 8.00 10.00 12.00 14.00 16.00 18.00 -.50 22.00 20.00 Eff. 40.00% 20.00% 18.00 4.00 50.00% PAE PAE (%) 32.00 .00% 6.00 8.00 10.00 12.00 14.00 Input Power (dBm) 16.00 18.00 20.00 Drain Efficiency (%) Drain Efficiency and PAE 3.50 Gain Compression (dB) Output Power (dBm) Power Transfer Characteristic 34.00 .00% 24.00 22.00 Input Power (dBm) IMProductsvs. Input Power FPD2000AS I-V Curves -20.00 27.00 1.400 -25.00 VGS = 0V 1.200 Im3, dBc -35.00 -40.00 -45.00 21.00 IM Products (dBc) -50.00 19.00 5.00 7.00 9.00 11.00 VGS = -0.50V .600 VGS = -0.75V .400 VGS = -1.0V VGS = -1.25V .000 0.00 -60.00 13.00 1.00 2.00 5.00 6.00 7.00 0. 8 Swp Max 244 Swp Max 181 0 Pout_dBm = 22 dBm 2.0 IP3_dBm = 42 dBm 0 .4 0 .4 IP3_dBm = 50 dBm 3. 3.0 4.0 5.0 IP3_dBm = 40 dBm 5.0 0 .2 IP3_dBm = 52 dBm 0 0 .2 4 .0 Pout_dBm = 32 dBm 10 .0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 Pout_dBm = 34 dBm 0.4 0.2 0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 10 .0 0 8.00 2. 0.6 IP3_dBm = 44 dBm 0 .6 1.0 4.00 FPD2000AS POWER CONTOURS 2 GHz FPD2000AS IP3 CONTOURS 2 GHz 0.8 3.00 Drain-Source Voltage (V) Input Power(dBm) 0.6 3.00 VGS = -0.25V .800 .200 -55.00 17.00 1.000 1.0 Output Power (dBm) Pout 23.00 Drain-Source Current (A) -30.00 25.00 IP3_dBm = 48 dBm -10 .0 -1 0.0 Pout_dBm = 30 dBm -0 .2 -5 .0 -0.2 -5 .0 -4 .0 -4 .0 Pout_dBm = 28 dBm .0 -2 Pout_dBm = 26 dBm -0 .8 -1.0 -0 .8 -0.6 4 Swp Min 1 -1.0 . -0 .0 -2 4 -0 .6 -3. 0 . -0 -3 .0 IP3_dBm = 46 dBm Pout_dBm = 24 dBm Swp Min 1 NOTE: Power contours measured at constant input power, level set to meet nominal P1dB rating at optimum match point. Optimum match: ΓS = 3 – j6 Ω and ΓL = 11 – j3 Ω NOTE: IP3 contours generated with PIN = 11dB back-off from P1dB. Local maxima for best linearity located at: ΓL = 15 + j4.5 Ω and ΓL = 28 – j25 Ω with ΓS = 9.5 - j4 Ω 3 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD2000AS Datasheet v3.0 TYPICAL MEASURED RF PERFORMANCE: Note: Measurement Conditions TAMBIENT = 22°C unless otherwise stated (VDS=10V, IDS=200mA) FPD2000AS at VDS = 10V and IDS = 350mA FPD2000AS at VDS = 10V and IDS = 350mA 40 30.0 35 25.0 Power (dBm) or Gain (dB) 30 Gain 20.0 15.0 S21 MSG 10.0 P1dB 25 G1dB 20 15 10 5.0 5 0 500 0.0 0 500 1000 1500 2000 2500 3000 3500 4000 1000 1500 2000 2500 3000 3500 Frequency (MHz) Frequency (MHz) AS PACKAGE OUTLINE AND RECOMMENDED PC BOARD LAYOUT: (dimensions in millimeters – mm) 3.8 0.35 2 Plcs. 0 to 0.3 4 Plcs. 0.35 2 Plcs. 0.5 2 Plcs. 3.8 4.4 2.2±0.25 1.9±0.25 1.3 2 Plcs. 3.2 0.15 1.5 Epoxy Fillet All Dimnesions in mm General Tolerance: .xx ± 0.05 .x ± 0.15 For best positional accuracy in auto pick and place device should be referenced directly from the leads 4 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com 4000 FPD2000AS Datasheet v3.0 REFERENCE DESIGN (3.4 – 3.5GHZ): PARAMETER UNIT PERFORMANCE Frequency GHz 3.4 to 3.5 Gain dB 10 P1dB dBm 33 IM3 @22dBm Pout SCL dBc -45dBc S11 dB -6 S22 dB -15 Vd V 10 Vg V -0.6 to -0.9 Id mA 350 SCHEMATIC: Vd -Vg 1.0uF 1.0uF FPD2000AS EVAL Board Schematic 10pF 10pF 20 Ohm Z16 Z10 Z15 Z9 15pF 1 RF IN (50 Ohm) Z5 Z1 2 4 1 3 Z2 Z1 Z3 2 4 1 3 Z4 Z5 Z14 Z8 Z6 2 4 1 Z12 3 Z7 Z11 2 4 15pF 3 Z13 Z17 Z18 Z19 RF OUT (50 Ohm) Z14 Z8 Desc. Value 0.050" x 1.000" Microstrip Z1 W1=0.020" W2=0.050" W3=0.020" W4=0.050" Microstrip Cross Z2 0.020" x 0.100" Microstrip Z3 W1=0.020" W2=0.050" W3=0.020" W4=0.050" Microstrip Cross Z4 0.050" x 0.100" Microstrip Z5 0.020" x 0.440" Microstrip Z6 W1=0.020" W2=0.085" W3=0.020" W4=0.085" Microstrip Cross Z7 0.085" x 0.254" Microstrip Z8 0.015" x 0.296" Microstrip Z9 0.360" x 90° Microstrip Radial Stub Z10 0.420" x 90° Microstrip Radial Stub Z16 Z11, Z12 0.040" x 0.040" Microstrip W1=0.090" W2=0.200" W3=0.090" W4=0.200" Microstrip Cross Z13 0.200" x 0.100" Microstrip Z14 0.015" x 0.450" Microstrip Z15 0.090" x 0.190" Microstrip Z17 0.140" x 0.480" Microstrip Z18 0.050" x 0.100" Microstrip Z19 5 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD2000AS Datasheet v3.0 BOARD LAYOUT (3.4 – 3.5GHZ): VD RF IN EV-SP-000044-001 NOTE: AutoCAD™ drawing available on request 6 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD2000AS Datasheet v3.0 S-PARAMETERS: Note: Biased @ 10V, 350mA FREQ-GHZ 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 3.60 3.70 3.80 3.90 4.00 4.10 4.20 4.30 4.40 4.50 4.60 4.70 4.80 4.90 5.00 S11MAG 0.89 0.89 0.89 0.89 0.89 0.89 0.89 0.89 0.89 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.87 0.87 0.87 0.86 0.86 0.86 0.86 0.85 0.85 0.85 0.85 0.85 0.85 S11ANG -151.40 -158.58 -164.23 -168.91 -172.86 -176.35 -179.44 177.74 175.11 172.67 170.35 168.17 166.09 164.11 162.17 160.30 158.48 156.67 155.01 153.30 151.64 150.05 148.54 147.00 145.28 143.93 142.45 141.02 139.58 138.21 136.87 135.65 134.47 129.67 127.78 125.78 123.84 121.77 119.75 117.52 115.54 113.68 111.67 109.46 107.26 105.01 S21MAG 12.52 10.57 9.14 8.06 7.20 6.51 5.93 5.45 5.05 4.70 4.40 4.13 3.89 3.69 3.50 3.34 3.19 3.05 2.93 2.81 2.71 2.61 2.52 2.44 2.36 2.29 2.23 2.16 2.11 2.05 2.00 1.95 1.90 1.94 1.91 1.88 1.84 1.81 1.79 1.76 1.74 1.71 1.69 1.67 1.65 1.63 S21ANG 96.06 91.14 86.95 83.20 79.78 76.60 73.62 70.77 68.02 65.34 62.72 60.18 57.70 55.24 52.76 50.37 48.01 45.65 43.35 41.02 38.72 36.43 34.20 31.95 29.69 27.42 25.22 23.03 20.81 18.59 16.40 14.24 12.24 8.92 6.50 3.95 1.48 -0.89 -3.25 -5.69 -8.29 -10.69 -13.07 -15.55 -18.04 -20.54 S12MAG 0.02 0.02 0.02 0.02 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.05 0.05 0.05 0.05 0.05 0.05 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.07 0.07 S12ANG 23.09 21.17 20.24 19.30 18.90 18.57 18.50 18.46 18.41 18.34 18.30 18.25 18.34 18.22 18.00 18.00 18.01 17.70 17.42 17.44 16.81 16.69 16.42 16.22 15.56 15.49 14.94 14.53 14.10 13.33 12.89 12.15 11.80 10.05 9.06 7.84 6.72 5.60 4.45 3.33 2.14 1.05 -0.20 -1.36 -2.60 -3.94 S22MAG 0.41 0.41 0.42 0.42 0.42 0.42 0.42 0.42 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.42 0.42 0.42 0.42 0.42 0.42 0.41 0.41 0.41 0.41 0.41 0.41 0.41 S22ANG -163.97 -168.16 -171.39 -174.09 -176.33 -178.37 179.80 178.18 176.66 175.27 173.92 172.69 171.34 170.15 168.95 167.90 166.84 165.65 164.73 163.72 162.73 161.59 160.71 159.70 158.58 157.76 156.78 155.89 154.94 154.07 153.19 152.58 151.58 148.11 146.79 145.39 143.97 142.63 141.09 139.29 137.87 136.50 135.06 133.46 131.82 130.21 7 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD2000AS Datasheet v3.0 S-PARAMETERS (CONT.): Note: Biased @ 10V, 350mA FREQ-GHZ 5.10 5.20 5.30 5.40 5.50 5.60 5.70 5.80 5.90 6.00 6.10 6.20 6.30 6.40 6.50 6.60 6.70 6.80 6.90 7.00 7.10 7.20 7.30 7.40 7.50 7.60 7.70 7.80 7.90 8.00 8.10 8.20 8.30 8.40 8.50 8.60 8.70 8.80 8.90 9.00 9.10 9.20 9.30 9.40 9.50 9.60 9.70 9.80 9.90 10.00 S11MAG 0.85 0.85 0.84 0.84 0.84 0.84 0.84 0.84 0.84 0.83 0.83 0.83 0.83 0.83 0.83 0.83 0.82 0.82 0.83 0.83 0.83 0.83 0.83 0.83 0.83 0.83 0.83 0.83 0.84 0.84 0.84 0.84 0.84 0.84 0.84 0.84 0.84 0.84 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 S11ANG 102.67 100.31 97.99 95.60 93.23 90.81 88.26 85.69 83.17 80.66 78.11 75.46 72.84 70.23 67.48 64.77 62.13 59.92 57.56 54.88 52.08 49.37 46.66 44.02 41.53 38.88 36.18 33.64 31.05 28.44 25.95 23.49 21.07 18.55 16.14 13.74 11.39 8.95 6.61 4.26 1.89 -0.35 -2.77 -5.00 -7.40 -9.69 -12.14 -14.66 -17.20 -19.62 S21MAG 1.61 1.59 1.58 1.56 1.54 1.52 1.50 1.49 1.47 1.45 1.44 1.42 1.40 1.39 1.37 1.35 1.33 1.32 1.32 1.31 1.29 1.28 1.26 1.24 1.23 1.22 1.20 1.19 1.17 1.16 1.15 1.13 1.12 1.11 1.09 1.08 1.07 1.06 1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.97 0.96 0.95 0.94 S21ANG -23.07 -25.68 -28.24 -30.82 -33.39 -36.00 -38.59 -41.22 -43.83 -46.44 -49.07 -51.79 -54.48 -57.14 -59.81 -62.42 -64.76 -66.68 -69.52 -72.55 -75.44 -78.19 -80.88 -83.44 -86.01 -88.90 -91.67 -94.33 -97.01 -99.67 -102.28 -104.88 -107.55 -110.22 -112.79 -115.39 -117.96 -120.52 -123.07 -125.62 -128.14 -130.70 -133.36 -135.96 -138.56 -141.19 -143.84 -146.52 -149.12 -151.71 S12MAG 0.07 0.07 0.07 0.07 0.08 0.08 0.08 0.08 0.08 0.08 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.10 0.10 0.10 0.11 0.11 0.11 0.11 0.11 0.11 0.12 0.12 0.12 0.12 0.12 0.12 0.12 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.14 0.14 0.14 0.14 0.14 0.14 0.15 0.15 0.15 0.15 S12ANG -5.34 -6.87 -8.40 -9.89 -11.46 -12.98 -14.50 -16.11 -17.66 -19.28 -21.12 -23.29 -25.03 -26.82 -28.64 -30.28 -31.41 -30.95 -32.92 -35.78 -38.26 -40.46 -42.52 -44.17 -45.73 -48.21 -50.47 -52.59 -54.72 -56.85 -58.91 -60.91 -62.95 -65.03 -66.97 -68.91 -70.86 -72.85 -74.90 -76.87 -78.87 -80.90 -83.07 -85.21 -87.34 -89.56 -91.85 -94.12 -96.23 -98.00 S22MAG 0.41 0.41 0.41 0.41 0.41 0.40 0.41 0.41 0.41 0.41 0.41 0.41 0.41 0.41 0.41 0.41 0.41 0.40 0.41 0.42 0.42 0.42 0.43 0.43 0.43 0.43 0.44 0.44 0.44 0.44 0.45 0.45 0.45 0.45 0.46 0.46 0.46 0.46 0.46 0.46 0.46 0.47 0.47 0.47 0.47 0.47 0.47 0.47 0.48 0.48 S22ANG 128.50 126.81 125.07 123.35 121.57 119.83 117.91 116.04 114.18 112.34 110.62 108.63 106.57 104.45 102.37 100.18 98.06 97.13 96.12 94.11 91.84 89.62 87.37 85.28 83.74 81.63 79.39 77.14 74.97 72.73 70.54 68.43 66.26 64.01 61.79 59.50 57.23 55.01 52.71 50.40 48.10 45.92 43.66 41.26 38.92 36.40 33.98 31.53 29.14 26.66 8 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD2000AS Datasheet v3.0 TAPE AND REEL DIMENSIONS AND PART ORIENTATION f xxx xxx PACKAGE MARKING CODE Example: f1ZD P2F f = Filtronic 1ZD = Lot / Date Code P2F = Status, Part Code, Part Type Parts per reel 178mm = 1000 330mm = 2500 9 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD2000AS Datasheet v3.0 PREFERRED ASSEMBLY INSTRUCTIONS: ORDERING INFORMATION: This package is compatible with both lead free and leaded solder reflow processes as defined within IPC/JEDEC J-STD-020C. The maximum package temperature should not exceed 260°C. Package leads are gold plated. PART NUMBER DESCRIPTION FPD2000AS Packaged pHEMT FPD2000AS-EB Packaged pHEMT evaluation board EB-2000AS-AB (880MHz) EB-2000AS-AA (1.85GHz) HANDLING PRECAUTIONS: EB-2000AS-AD (2.14GHz) EB-2000AS-AE (2.4GHz) To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. EB-2000AS-AF (2.44GHz) EB-2000AS-AG (2.5 to 2.7GHz) EB-2000AS-AH (3.5GHz) ESD/MSL RATING: These devices should be treated as Class 1A (250-500 V) using the human body model as defined in JEDEC Standard No. 22-A114. Further information on ESD control measures can be found in MIL-STD-1686 and MILHDBK-263. The device has a MSL rating of Level 1. To determine this rating, preconditioning was performed to the device per, the Pb-free solder profile defined within IPC/JEDEC J-STD-020C, Moisture / Reflow sensitivity classification for non-hermatic solid state surface mount devices APPLICATION NOTES & DESIGN DATA: Application Notes and design data including Sparameters, noise parameters and device model are available on request. DISCLAIMERS: This product is not designed for use in any space based or life sustaining/supporting equipment. 10 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com