Pb Free Plating Product CORPORATION G2307 P-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :2004/11/02 REVISED DATE :2005/10/13C BVDSS RDS(ON) ID -16V 60m -4.0A Description The G2307 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The G2307 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Applications Power Management in Notebook Computer Portable Equipment Battery Powered System. Package Dimensions REF. A B C D E F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current Continuous Drain Current3 Pulsed Drain Current1 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter 3 Thermal Resistance Junction-ambient Max. Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Unit V V A A A W W/ Tj, Tstg Ratings -16 8 -4.0 -3.3 -12 1.38 0.01 -55 ~ +150 Symbol Rthj-a Ratings 90 Unit /W 1/4 CORPORATION Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Unless otherwise specified) Symbol Min. Typ. Max. Unit BVDSS -16 - - V - -0.01 - - - -1.0 BVDSS/ Tj Breakdown Voltage Temperature Coefficient VGS(th) ISSUED DATE :2004/11/02 REVISED DATE :2005/10/13C V/ Test Conditions VGS=0, ID=-250uA Reference to 25 , ID=-1mA V VDS= VGS, ID=-250uA Forward Transconductance gfs - 12 - S VDS=-5.0V, ID=-4.0A Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±8V - - -1 uA VDS=-16V, VGS=0 - - -25 uA VDS=-12V, VGS=0 - - 60 Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) Static Drain-Source On-Resistance2 IDSS RDS(ON) - - 70 ID=-4.0A, VGS =-4.5V m 90 2 Total Gate Charge Qg - 15 24 Gate-Source Charge Qgs - 1.3 - Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time ID=-3.0A, VGS =-2.5V ID=-2.0A, VGS =-1.8V ID=-4.0A nC VDS=-12V Qgd - 4 - VGS=-4.5V Td(on) - 8 - Tr - 11 - Td(off) - 54 - ns VDS=-10V ID=-1A VGS=-10V RG=3.3 RD=10 pF VGS=0V VDS=-15V f=1.0MHz Tf - 36 - Input Capacitance Ciss - 985 1580 Output Capacitance Coss - 180 - Reverse Transfer Capacitance Crss - 160 - Source-Drain Diode Forward On Voltage2 VSD - - -1.2 V IS=-1.2A, VGS =0 Reverse Recovery Time2 Trr - 39 - ns Reverse Recovery Charge Qrr - 26 - nC IS=-4.0A, VGS =0 dI/dt=100A/us Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270 /W when mounted on min. copper pad. Characteristics Curve 2/4 CORPORATION ISSUED DATE :2004/11/02 REVISED DATE :2005/10/13C 3/4 CORPORATION ISSUED DATE :2004/11/02 REVISED DATE :2005/10/13C Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 4/4