Pb Free Plating Product ISSUED DATE :2005/07/05 REVISED DATE : G2U9972 BVDSS RDS(ON) ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 60V 18m 60A Description The G2U9972 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-262 package is universally preferred for all commercial-industrial applications and suited for low voltage applications such as DC/DC converters. Features *Simple Drive Requirement *Lower Gate Charge Package Dimensions REF. A b c D E Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 REF. c2 b2 L e L2 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 1.27 REF. Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 25 V Continuous Drain Current, VGS@10V ID @TC=25 60 A Continuous Drain Current, VGS@10V ID @TC=100 38 A 230 A 89 W Pulsed Drain Current 1 IDM PD @TC=25 Total Power Dissipation Linear Derating Factor Avalanche Current 2 Operating Junction and Storage Temperature Range 0.7 W/ IAR 30 A Tj, Tstg -55 ~ +150 Symbol Value Thermal Data Parameter Unit Thermal Resistance Junction-case Max. Rthj-c 1.4 /W Thermal Resistance Junction-ambient Max. Rthj-a 62 /W G2U9972 Page: 1/4 ISSUED DATE :2005/07/05 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 60 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.06 - Gate Threshold Voltage VGS(th) 1.0 - 3.0 V VDS=VGS, ID=250uA gfs - 55 - S VDS=10V, ID=35A IGSS - - 100 nA VGS= - - 10 uA VDS=60V, VGS=0 - - 25 uA VDS=48V, VGS=0 - - 18 - - 22 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=150 ) Static Drain-Source On-Resistance3 IDSS RDS(ON) V/ m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA 25V VGS=10V, ID=35A VGS=4.5V, ID=25A Total Gate Charge3 Qg - 32 51 Gate-Source Charge Qgs - 8 - Gate-Drain (“Miller”) Change Qgd - 20 - Td(on) - 11 - Tr - 58 - Td(off) - 45 - Tf - 80 - Input Capacitance Ciss - 3170 5070 Output Capacitance Coss - 280 - Reverse Transfer Capacitance Crss - 230 - Rg - 1.7 - Symbol Min. Typ. Max. Unit VSD - - 1.2 V IS=35A, VGS=0V Reverse Recovery Time Trr - 50 - ns Reverse Recovery Charge Qrr - 48 - nC IS=35A, VGS=0V dI/dt=100A/ s Turn-on Delay Time3 Rise Time Turn-off Delay Time Fall Time Gate Resistance nC ID=35A VDS=48V VGS=4.5V ns VDS=30V ID=35A VGS=10V RG=3.3 RD=0.86 pF S nA VGS=0V VDS=25V f=1.0MHz f=1.0MHz Source-Drain Diode Parameter 3 Forward On Voltage Test Conditions Notes: 1. Pulse width limited by Max. junction temperature. 2. Staring Tj=25 , VDD=30V, L=1mH, RG=25 , IAS=30A. 3. Pulse width 300us, duty cycle 2%. G2U9972 Page: 2/4 ISSUED DATE :2005/07/05 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode G2U9972 Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 3/4 ISSUED DATE :2005/07/05 REVISED DATE : Fig 7. Gate Charge Characteristics Fig 9. Maximum Safe Operating Area Fig 11. Transfer Characteristics Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 G2U9972 Page: 4/4