Pb Free Plating Product ISSUED DATE :2006/01/19 REVISED DATE : GE08P20 BVDSS RDS(ON) ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -200V 680m -8A Description The GE08P20 (TO-220 package through-hole version) is available for low-profile applications and suited for low voltage applications such as DC/DC converters. Features *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic *RoHS Compliant Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS -200 V Gate-Source Voltage VGS ±20 V Continuous Drain Current, VGS@10V ID @TC=25 -8 A Continuous Drain Current, VGS@10V ID @TC=100 -5 A -30 A 96 W Pulsed Drain Current 1 IDM Total Power Dissipation PD @TC=25 Linear Derating Factor 0.77 Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Symbol Value W/ Thermal Data Parameter Unit Thermal Resistance Junction-case Max. Rthj-c 1.3 /W Thermal Resistance Junction-ambient Max. Rthj-a 62 /W GE08P20 Page: 1/4 ISSUED DATE :2006/01/19 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS -200 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - -0.03 - Gate Threshold Voltage VGS(th) -2.0 - -4.0 V VDS=VGS, ID=-250uA gfs - 4 - S VDS=-10V, ID=-5A IGSS - - ±100 nA VGS= ±20V - - -25 uA VDS=-200V, VGS=0 - - -100 uA VDS=-160V, VGS=0 RDS(ON) - - 680 m VGS=-10V, ID=-4A Qg - 20 32 Gate-Source Charge Qgs - 5 - nC Gate-Drain (“Miller”) Change Qgd - 13 - ID=-5A VDS=-160V VGS=-4.5V Td(on) - 12 - Tr - 14 - Td(off) - 64 - ns Tf - 28 - VDS=-100V ID=-5A VGS=-10V RG=10 RD=20 Input Capacitance Ciss - 1210 - Output Capacitance Coss - 170 - pF Reverse Transfer Capacitance Crss - 45 - VGS=0V VDS=-25V f=1.0MHz Rg - 3.6 5.4 Symbol Min. Typ. Max. Unit VSD - - -1.3 V IS=-5A, VGS=0V Reverse Recovery Time2 Trr - 165 - ns Reverse Recovery Charge Qrr - 1420 - nC IS=-5A, VGS=0V dI/dt=100A/ s Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=150 ) 2 Static Drain-Source On-Resistance 2 Total Gate Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Gate Resistance IDSS V/ Test Conditions VGS=0, ID=-250uA Reference to 25 , ID=-1mA f=1.0MHz Source-Drain Diode Parameter Forward On Voltage2 Test Conditions Notes: 1. Pulse width limited by safe operating area. 2. Pulse width 300us, duty cycle 2%. GE08P20 Page: 2/4 ISSUED DATE :2006/01/19 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature GE08P20 Page: 3/4 ISSUED DATE :2006/01/19 REVISED DATE : Fig 7. Gate Charge Characteristics Fig 9. Maximum Safe Operating Area Fig 11. Transfer Characteristics Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GE08P20 Page: 4/4