GTM GE08P20

Pb Free Plating Product
ISSUED DATE :2006/01/19
REVISED DATE :
GE08P20
BVDSS
RDS(ON)
ID
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
-200V
680m
-8A
Description
The GE08P20 (TO-220 package through-hole version) is available for low-profile applications and suited for
low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
*RoHS Compliant
Package Dimensions
REF.
A
b
c
D
E
L4
L5
Millimeter
Min.
Max.
4.40
4.80
0.76
1.00
0.36
0.50
8.60
9.00
9.80
10.4
14.7
15.3
6.20
6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min.
Max.
1.25
1.45
1.17
1.47
13.25
14.25
2.54 REF.
2.60
2.89
3.71
3.96
2.60
2.80
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
-200
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current, VGS@10V
ID @TC=25
-8
A
Continuous Drain Current, VGS@10V
ID @TC=100
-5
A
-30
A
96
W
Pulsed Drain Current
1
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
0.77
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Symbol
Value
W/
Thermal Data
Parameter
Unit
Thermal Resistance Junction-case
Max.
Rthj-c
1.3
/W
Thermal Resistance Junction-ambient
Max.
Rthj-a
62
/W
GE08P20
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ISSUED DATE :2006/01/19
REVISED DATE :
Electrical Characteristics (Tj = 25
Parameter
unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
-200
-
-
V
Breakdown Voltage Temperature Coefficient
BVDSS / Tj
-
-0.03
-
Gate Threshold Voltage
VGS(th)
-2.0
-
-4.0
V
VDS=VGS, ID=-250uA
gfs
-
4
-
S
VDS=-10V, ID=-5A
IGSS
-
-
±100
nA
VGS= ±20V
-
-
-25
uA
VDS=-200V, VGS=0
-
-
-100
uA
VDS=-160V, VGS=0
RDS(ON)
-
-
680
m
VGS=-10V, ID=-4A
Qg
-
20
32
Gate-Source Charge
Qgs
-
5
-
nC
Gate-Drain (“Miller”) Change
Qgd
-
13
-
ID=-5A
VDS=-160V
VGS=-4.5V
Td(on)
-
12
-
Tr
-
14
-
Td(off)
-
64
-
ns
Tf
-
28
-
VDS=-100V
ID=-5A
VGS=-10V
RG=10
RD=20
Input Capacitance
Ciss
-
1210
-
Output Capacitance
Coss
-
170
-
pF
Reverse Transfer Capacitance
Crss
-
45
-
VGS=0V
VDS=-25V
f=1.0MHz
Rg
-
3.6
5.4
Symbol
Min.
Typ.
Max.
Unit
VSD
-
-
-1.3
V
IS=-5A, VGS=0V
Reverse Recovery Time2
Trr
-
165
-
ns
Reverse Recovery Charge
Qrr
-
1420
-
nC
IS=-5A, VGS=0V
dI/dt=100A/ s
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
2
Static Drain-Source On-Resistance
2
Total Gate Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Gate Resistance
IDSS
V/
Test Conditions
VGS=0, ID=-250uA
Reference to 25 , ID=-1mA
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Test Conditions
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
GE08P20
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ISSUED DATE :2006/01/19
REVISED DATE :
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
GE08P20
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ISSUED DATE :2006/01/19
REVISED DATE :
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Transfer Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GE08P20
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