Pb Free Plating Product ISSUED DATE :2005/02/25 REVISED DATE : GI3403 BVDSS RDS(ON) ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -30V 200m -10A Description The GI3403 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The TO-251 package is universally used for commercial-industrial applications. Features *Simple Drive Requirement *Lower Gate Charge *Fast Switching Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID @TC=25 -10 A Continuous Drain Current ID @TC=70 -8.6 A -48 A 36.7 W Pulsed Drain Current 1 IDM Total Power Dissipation PD @TC=25 Linear Derating Factor 0.29 Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Symbol Value W/ Thermal Data Parameter Unit Thermal Resistance Junction-case Max. Rthj-case 3.4 /W Thermal Resistance Junction-ambient Max. Rthj-amb 110 /W GI3403 Page: 1/4 ISSUED DATE :2005/02/25 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS -30 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - -0.1 - Gate Threshold Voltage VGS(th) -1.0 - -3.0 V VDS=VGS, ID=-250uA gfs - 2 - S VDS=-10V, ID=-6A IGSS - - ±100 nA VGS= ±20V - - -1 uA VDS=-30V, VGS=0 - - -25 uA VDS=-24V, VGS=0 - - 200 - - 400 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=150 ) Static Drain-Source On-Resistance2 IDSS RDS(ON) V/ m Test Conditions VGS=0, ID=-250uA Reference to 25 , ID=-1mA VGS=-10V, ID=-6A VGS=-4.5V, ID=-4A Total Gate Charge2 Qg - 3.8 - Gate-Source Charge Qgs - 1.7 - Gate-Drain (“Miller”) Change Qgd - 1.6 - Td(on) - 6.7 - Tr - 20.8 - Td(off) - 14.9 - Tf - 4.4 - Input Capacitance Ciss - 217 - Output Capacitance Coss - 103 - Reverse Transfer Capacitance Crss - 31 - Symbol Min. Typ. Max. Unit VSD - - -1.2 V IS=-1.25A, VGS=0V Reverse Recovery Time Trr - 35 - ns Reverse Recovery Charge Qrr - 63 - nC IS=-6A, VGS=0V dI/dt=100A/ s Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time nC ID=-6A VDS=-24V VGS=-4.5V ns VDS=-15V ID=-6A VGS=-10V RG=2 RD=2.5 pF VGS=0V VDS=-25V f=1.0MHz Source-Drain Diode Parameter 2 Forward On Voltage Test Conditions Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. GI3403 Page: 2/4 ISSUED DATE :2005/02/25 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode GI3403 Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 3/4 ISSUED DATE :2005/02/25 REVISED DATE : Fig 7. Gate Charge Characteristics Fig 9. Maximum Safe Operating Area Fig 11. Switching Time Circuit Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Circuit Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GI3403 Page: 4/4