1/2 G 4 11 S D S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 4 0 V, C U R R E N T 0 . 5 A Description The G411SD is designed for low power rectification Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings at Ta = 25 Parameter Symbol Ratings Unit Junction Temperature Tj +125 Storage Temperature Tstg -40 ~ +125 Maximum Recurrent Peak Reverse Voltage VRRM 40 V Maximum RMS Voltage VRMS 28 V Maximum DC Blocking Voltage VDC 20 V Peak Forward Surge Current at 8.3mSec single half sine-wave IFSM 3 A Typical Junction Capacitance between Terminal CJ 20 pF Maximum Average Forward Rectified Current Io 0.5 A Total Power Dissipation PD 225 mW Characteristics at Ta = 25 Characteristics Symbol Typ. Unit Maximum Instantaneous Forward Voltage VF(1) 0.3 V IF = 10mA Maximum Instantaneous Forward Voltage VF(2) 0.5 V IF =500mA IR 30 uA VR = 10V Maximum Average Reverse Current Test Condition 2/2 Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165