1/2 G B AT 5 4 / A / C / S Description Silicon Schottky Barrier Double Diodes . Package Dimensions REF. A B C D E F Min. 2.70 2.40 1.40 0.35 0 0.45 Millimeter Max. 3.10 2.80 1.60 0.50 0.10 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Style : Pin 1.Anode 2.Cathode 3.Common Connection Absolute Maximum Ratings Parameter Symbol Ratings Junction Temperature Tj +125 Storage Temperature Tstg -65 ~ +125 Repetitive Peak Reverse Voltage Unit 30 V Forward Continuous Current 200 mA Repetitive Peak Forward Current 300 mA Surge Forward Current 600 mA 230 mW Total Power Dissipation at Ta = 25 Characteristics PD at Ta = 25 characteristics Symbol Min Max. Unit Reverse breakdown voltage V(BR)R 30 - V IR=10uA VF(1) - 240 mV IF=0.1mA VF(2) - 320 mV IF=1mA VF(3) - 400 mV IF=10mA VF(4) - 500 mV IF=30mA VF(5) - 1000 mV IF=100mA Reverse Current IR - 2.0 uA VR=25V Total Capacitance CT - 10 pF VR=1V, f=1MHz Reverse Recover Time Trr - 5 ns IF=IR=10mA, RL=100 Forward Voltage Test Conditions measured at IR=1mA 2/2 Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 FAX : 86-21-38950165