GTM GBAT54

1/2
G B AT 5 4 / A / C / S
Description
Silicon Schottky Barrier Double Diodes .
Package Dimensions
REF.
A
B
C
D
E
F
Min.
2.70
2.40
1.40
0.35
0
0.45
Millimeter
Max.
3.10
2.80
1.60
0.50
0.10
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
0.85
1.15
0
10
Style : Pin 1.Anode 2.Cathode 3.Common Connection
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Junction Temperature
Tj
+125
Storage Temperature
Tstg
-65 ~ +125
Repetitive Peak Reverse Voltage
Unit
30
V
Forward Continuous Current
200
mA
Repetitive Peak Forward Current
300
mA
Surge Forward Current
600
mA
230
mW
Total Power Dissipation at Ta = 25
Characteristics
PD
at Ta = 25
characteristics
Symbol
Min
Max.
Unit
Reverse breakdown voltage
V(BR)R
30
-
V
IR=10uA
VF(1)
-
240
mV
IF=0.1mA
VF(2)
-
320
mV
IF=1mA
VF(3)
-
400
mV
IF=10mA
VF(4)
-
500
mV
IF=30mA
VF(5)
-
1000
mV
IF=100mA
Reverse Current
IR
-
2.0
uA
VR=25V
Total Capacitance
CT
-
10
pF
VR=1V, f=1MHz
Reverse Recover Time
Trr
-
5
ns
IF=IR=10mA, RL=100
Forward Voltage
Test Conditions
measured at IR=1mA
2/2
Characteristics Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 FAX : 86-21-38950165